DE2858706C2 - - Google Patents
Info
- Publication number
- DE2858706C2 DE2858706C2 DE2858706A DE2858706A DE2858706C2 DE 2858706 C2 DE2858706 C2 DE 2858706C2 DE 2858706 A DE2858706 A DE 2858706A DE 2858706 A DE2858706 A DE 2858706A DE 2858706 C2 DE2858706 C2 DE 2858706C2
- Authority
- DE
- Germany
- Prior art keywords
- component
- layer
- type semiconductor
- thickness
- layers
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 claims description 22
- 230000005855 radiation Effects 0.000 claims description 17
- 230000005693 optoelectronics Effects 0.000 claims description 15
- 239000013307 optical fiber Substances 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 6
- 238000001514 detection method Methods 0.000 claims 1
- 230000005540 biological transmission Effects 0.000 description 6
- 239000000203 mixture Substances 0.000 description 6
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 4
- 229910017214 AsGa Inorganic materials 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 239000000835 fiber Substances 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 238000013016 damping Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 239000007791 liquid phase Substances 0.000 description 1
- 238000004943 liquid phase epitaxy Methods 0.000 description 1
- 230000007257 malfunction Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04B—TRANSMISSION
- H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
- H04B10/40—Transceivers
- H04B10/43—Transceivers using a single component as both light source and receiver, e.g. using a photoemitter as a photoreceiver
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/26—Optical coupling means
- G02B6/264—Optical coupling means with optical elements between opposed fibre ends which perform a function other than beam splitting
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4202—Packages, e.g. shape, construction, internal or external details for coupling an active element with fibres without intermediate optical elements, e.g. fibres with plane ends, fibres with shaped ends, bundles
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4246—Bidirectionally operating package structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
- H01L31/125—Composite devices with photosensitive elements and electroluminescent elements within one single body
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Composite Materials (AREA)
- Signal Processing (AREA)
- Chemical & Material Sciences (AREA)
- Computer Networks & Wireless Communication (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
- Led Devices (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Optical Communication System (AREA)
- Optical Couplings Of Light Guides (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR7711425A FR2387519A1 (fr) | 1977-04-15 | 1977-04-15 | Diode electroluminescente photodetectrice et lignes " bus " utilisant cette diode |
Publications (1)
Publication Number | Publication Date |
---|---|
DE2858706C2 true DE2858706C2 (US07923587-20110412-C00022.png) | 1989-03-16 |
Family
ID=9189471
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19782816312 Granted DE2816312A1 (de) | 1977-04-15 | 1978-04-14 | Elektrolumineszenz- und photodetektordiode und damit ausgeruestete bus-leitung |
DE2858706A Expired DE2858706C2 (US07923587-20110412-C00022.png) | 1977-04-15 | 1978-04-14 |
Family Applications Before (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19782816312 Granted DE2816312A1 (de) | 1977-04-15 | 1978-04-14 | Elektrolumineszenz- und photodetektordiode und damit ausgeruestete bus-leitung |
Country Status (6)
Families Citing this family (27)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4281253A (en) * | 1978-08-29 | 1981-07-28 | Optelecom, Inc. | Applications of dual function electro-optic transducer in optical signal transmission |
US4213138A (en) * | 1978-12-14 | 1980-07-15 | Bell Telephone Laboratories, Incorporated | Demultiplexing photodetector |
FR2448259A1 (fr) * | 1979-02-02 | 1980-08-29 | Souriau & Cie | Coupleur actif entre une ligne " bus " optique et l'un des abonnes, et ligne " bus " comportant de tels coupleurs actifs |
JPS55132972U (US07923587-20110412-C00022.png) * | 1979-03-13 | 1980-09-20 | ||
US4268113A (en) * | 1979-04-16 | 1981-05-19 | International Business Machines Corporation | Signal coupling element for substrate-mounted optical transducers |
JPS5640287A (en) * | 1979-09-11 | 1981-04-16 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting device |
US4327962A (en) * | 1980-02-13 | 1982-05-04 | Redman Charles M | Laser/amplifier/detector diode |
JPS574181A (en) * | 1980-06-09 | 1982-01-09 | Matsushita Electric Ind Co Ltd | Semiconductor light-emitting device and its manufacture |
US4369524A (en) * | 1980-10-14 | 1983-01-18 | Xerox Corporation | Single component transceiver device for linear fiber optical network |
US4577209A (en) * | 1982-09-10 | 1986-03-18 | At&T Bell Laboratories | Photodiodes having a hole extending therethrough |
US4549085A (en) * | 1983-04-14 | 1985-10-22 | Cooper Industries, Inc. | Electro-optical signal processing systems and devices |
FR2570841A1 (fr) * | 1984-09-25 | 1986-03-28 | Thomson Csf | Dispositif optoelectronique emetteur-recepteur dans un systeme de transmission d'informations par fibre optique comprenant un organe de test in situ |
GB2177868B (en) * | 1985-07-11 | 1989-02-22 | Stc Plc | Fibre optic network component |
US4744623A (en) * | 1985-10-16 | 1988-05-17 | The Trustees Of Columbia University In The City Of New York | Integrated fiber optic coupler for VHSIC/VLSI interconnects |
US4779946A (en) * | 1986-02-14 | 1988-10-25 | American Telephone And Telegraph Company, At&T Bell Laboratories | Microminiature optical assembly |
GB2207500B (en) * | 1987-07-29 | 1991-04-24 | Gen Electric Co Plc | Light sensing arrangement |
GB8800972D0 (en) * | 1988-01-16 | 1988-02-17 | Oxley Dev Co Ltd | Sub-sea cable location indicator |
DE3906345A1 (de) * | 1989-02-28 | 1990-08-30 | Eckhard Dr Kaufmann | Thermoelektrisches wandlerelement |
US5067809A (en) * | 1989-06-09 | 1991-11-26 | Oki Electric Industry Co., Ltd. | Opto-semiconductor device and method of fabrication of the same |
US4989051A (en) * | 1990-02-13 | 1991-01-29 | The Univ. Of Delaware | Bi-directional, feed through emitter-detector for optical fiber transmission lines |
US5039189A (en) * | 1990-04-06 | 1991-08-13 | Lockheed Missiles & Space Company, Inc. | Optical signal distribution network and method of converting independent optical/electrical signals |
IT1277856B1 (it) * | 1995-02-09 | 1997-11-12 | Univ Roma | Rivelatore di radiazione ultravioletta in film sottile, con opzione di elevata selettivita' spettrale. |
FR2815140B1 (fr) | 2000-10-11 | 2003-07-25 | Commissariat Energie Atomique | Procede et dispositif d'alignement passif de guides de lumiere et de composants optoelectriques et systeme optique utilisant ce dispositif |
US7202102B2 (en) * | 2001-11-27 | 2007-04-10 | Jds Uniphase Corporation | Doped absorption for enhanced responsivity for high speed photodiodes |
JP3807385B2 (ja) * | 2003-05-14 | 2006-08-09 | セイコーエプソン株式会社 | 光モジュール及びその製造方法、光通信装置、電子機器 |
US7745900B2 (en) * | 2005-08-24 | 2010-06-29 | Micron Technology, Inc. | Method and apparatus providing refractive index structure for a device capturing or displaying images |
US7675080B2 (en) * | 2006-01-10 | 2010-03-09 | Aptina Imaging Corp. | Uniform color filter arrays in a moat |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2542072A1 (de) * | 1974-10-03 | 1976-04-08 | Itt Ind Gmbh Deutsche | Lichtemittierende halbleiterdiode |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2175574B1 (US07923587-20110412-C00022.png) * | 1972-03-14 | 1975-08-29 | Radiotechnique Compelec | |
US3982261A (en) * | 1972-09-22 | 1976-09-21 | Varian Associates | Epitaxial indium-gallium-arsenide phosphide layer on lattice-matched indium-phosphide substrate and devices |
FR2273371B1 (US07923587-20110412-C00022.png) * | 1974-05-28 | 1978-03-31 | Thomson Csf | |
US3936855A (en) * | 1974-08-08 | 1976-02-03 | International Telephone And Telegraph Corporation | Light-emitting diode fabrication process |
US3952265A (en) * | 1974-10-29 | 1976-04-20 | Hughes Aircraft Company | Monolithic dual mode emitter-detector terminal for optical waveguide transmission lines |
US3982207A (en) * | 1975-03-07 | 1976-09-21 | Bell Telephone Laboratories, Incorporated | Quantum effects in heterostructure lasers |
US4071753A (en) * | 1975-03-31 | 1978-01-31 | Gte Laboratories Incorporated | Transducer for converting acoustic energy directly into optical energy |
FR2319980A1 (fr) * | 1975-07-28 | 1977-02-25 | Radiotechnique Compelec | Dispositif optoelectronique semi-conducteur reversible |
FR2322382A1 (fr) * | 1975-08-29 | 1977-03-25 | Radiotechnique Compelec | Conduit optique |
US4021834A (en) * | 1975-12-31 | 1977-05-03 | The United States Of America As Represented By The Secretary Of The Army | Radiation-resistant integrated optical signal communicating device |
FR2356171A1 (fr) * | 1976-01-27 | 1978-01-20 | Thomson Csf | Derivation opto-electrique pour liaisons par faisceaux de fibres optiques |
US4152713A (en) * | 1977-12-05 | 1979-05-01 | Bell Telephone Laboratories, Incorporated | Unidirectional optical device and regenerator |
-
1977
- 1977-04-15 FR FR7711425A patent/FR2387519A1/fr active Granted
-
1978
- 1978-04-11 US US05/895,502 patent/US4217598A/en not_active Expired - Lifetime
- 1978-04-12 GB GB14432/78A patent/GB1594567A/en not_active Expired
- 1978-04-14 CA CA301,155A patent/CA1103766A/en not_active Expired
- 1978-04-14 DE DE19782816312 patent/DE2816312A1/de active Granted
- 1978-04-14 DE DE2858706A patent/DE2858706C2/de not_active Expired
- 1978-04-15 JP JP4471578A patent/JPS53129592A/ja active Granted
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE2542072A1 (de) * | 1974-10-03 | 1976-04-08 | Itt Ind Gmbh Deutsche | Lichtemittierende halbleiterdiode |
Non-Patent Citations (1)
Title |
---|
"IBM Technical Disclosure Bulletin", 15(1973) S. 2760-2761 * |
Also Published As
Publication number | Publication date |
---|---|
FR2387519A1 (fr) | 1978-11-10 |
DE2816312C2 (US07923587-20110412-C00022.png) | 1987-08-20 |
GB1594567A (en) | 1981-07-30 |
FR2387519B1 (US07923587-20110412-C00022.png) | 1981-06-12 |
DE2816312A1 (de) | 1978-10-19 |
JPS53129592A (en) | 1978-11-11 |
JPS6157717B2 (US07923587-20110412-C00022.png) | 1986-12-08 |
CA1103766A (en) | 1981-06-23 |
US4217598A (en) | 1980-08-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
Q172 | Divided out of (supplement): |
Ref country code: DE Ref document number: 2816312 |
|
8110 | Request for examination paragraph 44 | ||
8181 | Inventor (new situation) |
Free format text: D AURIA, LUIGI, CHEVREUSE, FR CRENOUX, BEAUDOIN DE, ORSAY, FR JAQUES, ANDRE, CHEVREUSE, FR |
|
AC | Divided out of |
Ref country code: DE Ref document number: 2816312 Format of ref document f/p: P |
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AC | Divided out of |
Ref country code: DE Ref document number: 2816312 Format of ref document f/p: P |
|
D2 | Grant after examination | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |