JPS574181A - Semiconductor light-emitting device and its manufacture - Google Patents
Semiconductor light-emitting device and its manufactureInfo
- Publication number
- JPS574181A JPS574181A JP7752880A JP7752880A JPS574181A JP S574181 A JPS574181 A JP S574181A JP 7752880 A JP7752880 A JP 7752880A JP 7752880 A JP7752880 A JP 7752880A JP S574181 A JPS574181 A JP S574181A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- substrate
- grown
- growth
- solution
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 abstract 7
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000007738 vacuum evaporation Methods 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
PURPOSE:To take out light absorbed into a GaAs substrate to the outside effectively by removing the substrate. CONSTITUTION:Metal Al, excessive GaAs polycrystals and Zn and Te as the impurities of each layer are charged to a carbon board having high purity to which the GaAs substrate 1 is charged, while using Ga crystals as a solution for growth. The grown board is inserted into a quartz reaction tube, the temperature is elevated in H2 gas having high purity and a solution for growing the first layer is contacted with the substrate 1. The reaction system is cooled slowly, and the first layer P- GaAlAs layer 2 is grown. The grown board is slid, the second growth solution is contacted on the substrate 1 and the second layer N-GaAlAs layer is grown in predetermined thickness. After growth is completed, the Ga of the substate is removed, and an electrode 11 at the N side is formed. The substrate 1 is removed according to etching, and an electrode at the P side is formed on the surface of the layer 2 according to Au-Be vacuum evaporation. Accordingly, light absorbed to the substrate 1 can be taken out effectively to the outside.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7752880A JPS574181A (en) | 1980-06-09 | 1980-06-09 | Semiconductor light-emitting device and its manufacture |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7752880A JPS574181A (en) | 1980-06-09 | 1980-06-09 | Semiconductor light-emitting device and its manufacture |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS574181A true JPS574181A (en) | 1982-01-09 |
Family
ID=13636471
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP7752880A Pending JPS574181A (en) | 1980-06-09 | 1980-06-09 | Semiconductor light-emitting device and its manufacture |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS574181A (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53129592A (en) * | 1977-04-15 | 1978-11-11 | Thomson Csf | Electric field light emission and light detecting diode and bus line utilizing same |
-
1980
- 1980-06-09 JP JP7752880A patent/JPS574181A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS53129592A (en) * | 1977-04-15 | 1978-11-11 | Thomson Csf | Electric field light emission and light detecting diode and bus line utilizing same |
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