DE2851330A1 - Magnetoresistives halbleiterelement - Google Patents
Magnetoresistives halbleiterelementInfo
- Publication number
- DE2851330A1 DE2851330A1 DE19782851330 DE2851330A DE2851330A1 DE 2851330 A1 DE2851330 A1 DE 2851330A1 DE 19782851330 DE19782851330 DE 19782851330 DE 2851330 A DE2851330 A DE 2851330A DE 2851330 A1 DE2851330 A1 DE 2851330A1
- Authority
- DE
- Germany
- Prior art keywords
- electrode
- electrodes
- short
- semiconductor element
- element according
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 59
- 230000005291 magnetic effect Effects 0.000 claims description 50
- 239000000758 substrate Substances 0.000 claims description 38
- 239000000463 material Substances 0.000 claims description 28
- 230000035945 sensitivity Effects 0.000 claims description 10
- 239000003302 ferromagnetic material Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 239000011521 glass Substances 0.000 claims description 3
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 description 11
- 239000013078 crystal Substances 0.000 description 10
- 239000010410 layer Substances 0.000 description 10
- 239000010408 film Substances 0.000 description 9
- 239000000126 substance Substances 0.000 description 8
- 229910052802 copper Inorganic materials 0.000 description 6
- 239000010949 copper Substances 0.000 description 6
- 230000005496 eutectics Effects 0.000 description 6
- 229910052751 metal Inorganic materials 0.000 description 6
- 239000002184 metal Substances 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 5
- 238000010276 construction Methods 0.000 description 5
- 239000003822 epoxy resin Substances 0.000 description 5
- 229920000647 polyepoxide Polymers 0.000 description 5
- 239000010409 thin film Substances 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- 238000000034 method Methods 0.000 description 4
- 229910052709 silver Inorganic materials 0.000 description 4
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 230000001419 dependent effect Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 230000004907 flux Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000001259 photo etching Methods 0.000 description 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 238000007740 vapor deposition Methods 0.000 description 3
- KUBDPQJOLOUJRM-UHFFFAOYSA-N 2-(chloromethyl)oxirane;4-[2-(4-hydroxyphenyl)propan-2-yl]phenol Chemical compound ClCC1CO1.C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 KUBDPQJOLOUJRM-UHFFFAOYSA-N 0.000 description 2
- 239000004593 Epoxy Substances 0.000 description 2
- -1 Gap Inorganic materials 0.000 description 2
- 229910000673 Indium arsenide Inorganic materials 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000007772 electroless plating Methods 0.000 description 2
- 230000005294 ferromagnetic effect Effects 0.000 description 2
- 229910021478 group 5 element Inorganic materials 0.000 description 2
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 239000010445 mica Substances 0.000 description 2
- 229910052618 mica group Inorganic materials 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 229910000859 α-Fe Inorganic materials 0.000 description 2
- 229910017115 AlSb Inorganic materials 0.000 description 1
- 229910000976 Electrical steel Inorganic materials 0.000 description 1
- 229910005542 GaSb Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910018605 Ni—Zn Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- USYLIGCRWXYYPZ-UHFFFAOYSA-N [Cl].[Fe] Chemical compound [Cl].[Fe] USYLIGCRWXYYPZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 230000005389 magnetism Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R33/00—Arrangements or instruments for measuring magnetic variables
- G01R33/02—Measuring direction or magnitude of magnetic fields or magnetic flux
- G01R33/06—Measuring direction or magnitude of magnetic fields or magnetic flux using galvano-magnetic devices
- G01R33/09—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP14224077A JPS5475284A (en) | 1977-11-29 | 1977-11-29 | Threeeterminal magnetic reluctance effect element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2851330A1 true DE2851330A1 (de) | 1979-06-07 |
| DE2851330C2 DE2851330C2 (OSRAM) | 1983-07-28 |
Family
ID=15310684
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19782851330 Granted DE2851330A1 (de) | 1977-11-29 | 1978-11-28 | Magnetoresistives halbleiterelement |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US4251795A (OSRAM) |
| JP (1) | JPS5475284A (OSRAM) |
| DE (1) | DE2851330A1 (OSRAM) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3216147A1 (de) * | 1982-04-30 | 1983-11-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Magnetfeldsensor |
Families Citing this family (63)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4584552A (en) * | 1982-03-26 | 1986-04-22 | Pioneer Electronic Corporation | Hall element with improved composite substrate |
| DE3526166C2 (de) * | 1984-07-23 | 1996-05-02 | Asahi Chemical Ind | Bürstenloser Elektromotor und Verfahren zum Herstellen einer Spuleneinheit für diesen |
| JPS6145922A (ja) * | 1984-08-10 | 1986-03-06 | Hitachi Ltd | 位置検出センサ |
| US4926154A (en) * | 1988-12-23 | 1990-05-15 | General Motors Corporation | Indium arsenide magnetoresistor |
| WO1991014288A1 (en) * | 1990-03-07 | 1991-09-19 | Santa Barbara Research Center | Magnetoresistor structure and operating method |
| US5038130A (en) * | 1990-11-06 | 1991-08-06 | Santa Barbara Research Center | System for sensing changes in a magnetic field |
| US5184106A (en) * | 1991-01-28 | 1993-02-02 | General Motors Corporation | Magnetic field sensor with improved electron mobility |
| US5153557A (en) * | 1991-01-28 | 1992-10-06 | General Motors Corporation | Magnetic field sensor contacts |
| DE9215228U1 (de) * | 1992-11-09 | 1993-04-01 | Woelke Magnetbandtechnik GmbH & Co KG, 8069 Schweitenkirchen | Magnetfeldempfindlicher Sensor |
| US5883564A (en) * | 1994-04-18 | 1999-03-16 | General Motors Corporation | Magnetic field sensor having high mobility thin indium antimonide active layer on thin aluminum indium antimonide buffer layer |
| US6222361B1 (en) * | 1997-12-04 | 2001-04-24 | Sony Precision Technology Inc. | Position detecting device using varying width magneto-resistive effect sensor |
| EP0971423A1 (en) * | 1998-07-10 | 2000-01-12 | Interuniversitair Micro-Elektronica Centrum Vzw | Spin-valve structure and method for making same |
| JP2001134911A (ja) * | 1999-11-01 | 2001-05-18 | Tdk Corp | 薄膜磁気ヘッド、ヘッドサスペンションアセンブリ、磁気ディスク装置及びそれらの製造方法 |
| EP1498744B1 (en) * | 2003-07-18 | 2011-08-10 | Yamaha Corporation | Magnetic sensor and manufacturing method therefor |
| JP4617319B2 (ja) * | 2005-01-19 | 2011-01-26 | 株式会社村田製作所 | カメラシャッター操作用多段スイッチ |
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| EP4011289A1 (en) | 2007-09-25 | 2022-06-15 | Otsuka Pharmaceutical Co., Ltd. | In-body device with virtual dipole signal amplification |
| MY154699A (en) * | 2007-11-27 | 2015-07-15 | Proteus Digital Health Inc | Transbody communication systems employing communication channels |
| EP3235491B1 (en) | 2008-03-05 | 2020-11-04 | Proteus Digital Health, Inc. | Multi-mode communication ingestible event markers and systems |
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| KR20110081834A (ko) * | 2008-10-14 | 2011-07-14 | 프로테우스 바이오메디컬, 인코포레이티드 | 게임 환경에서 생리학적 데이터를 통합하기 위한 방법과 시스템 |
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| CN102341031A (zh) | 2009-01-06 | 2012-02-01 | 普罗秋斯生物医学公司 | 摄取相关的生物反馈和个人化医学治疗方法和系统 |
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| TWI557672B (zh) | 2010-05-19 | 2016-11-11 | 波提亞斯數位康健公司 | 用於從製造商跟蹤藥物直到患者之電腦系統及電腦實施之方法、用於確認將藥物給予患者的設備及方法、患者介面裝置 |
| EP2642983A4 (en) | 2010-11-22 | 2014-03-12 | Proteus Digital Health Inc | DEVICE INGREABLE WITH PHARMACEUTICAL PRODUCT |
| US9756874B2 (en) | 2011-07-11 | 2017-09-12 | Proteus Digital Health, Inc. | Masticable ingestible product and communication system therefor |
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| EP2734973A4 (en) | 2011-07-21 | 2015-07-01 | Proteus Digital Health Inc | MOBILE COMMUNICATION DEVICE, SYSTEM AND METHOD |
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| JP2016508529A (ja) | 2013-01-29 | 2016-03-22 | プロテウス デジタル ヘルス， インコーポレイテッド | 高度に膨張可能なポリマーフィルムおよびこれを含む組成物 |
| JP5941240B2 (ja) | 2013-03-15 | 2016-06-29 | プロテウス デジタル ヘルス， インコーポレイテッド | 金属検出器装置、システム、および方法 |
| EP3005281A4 (en) | 2013-06-04 | 2017-06-28 | Proteus Digital Health, Inc. | System, apparatus and methods for data collection and assessing outcomes |
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| US10084880B2 (en) | 2013-11-04 | 2018-09-25 | Proteus Digital Health, Inc. | Social media networking based on physiologic information |
| TWI619280B (zh) * | 2014-04-01 | 2018-03-21 | 友達光電股份有限公司 | 感測元件 |
| US11051543B2 (en) | 2015-07-21 | 2021-07-06 | Otsuka Pharmaceutical Co. Ltd. | Alginate on adhesive bilayer laminate film |
| SG10202101937PA (en) | 2016-07-22 | 2021-03-30 | Proteus Digital Health Inc | Electromagnetic sensing and detection of ingestible event markers |
| CN109963499B (zh) | 2016-10-26 | 2022-02-25 | 大冢制药株式会社 | 用于制造具有可吸收事件标记器的胶囊的方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1050868B (OSRAM) * | ||||
| DE2534414A1 (de) * | 1975-08-01 | 1977-02-10 | Precision Electronic Component | Magneto-widerstand und verfahren zu dessen herstellung |
| JPH05267583A (ja) * | 1992-03-18 | 1993-10-15 | Nec Corp | 半導体集積回路装置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3691502A (en) * | 1968-04-24 | 1972-09-12 | Kogyo Gijutsuin | Semiconductor type potentiometer device |
| US3852103A (en) * | 1968-07-26 | 1974-12-03 | D Collins | Raster pattern magnetoresistors |
| JPS4934675B1 (OSRAM) * | 1970-01-09 | 1974-09-17 | ||
| US3731007A (en) * | 1971-04-19 | 1973-05-01 | Denki Onkyo Co Ltd | Magnetic head having a magneto-resistive bridge circuit |
| US3921217A (en) * | 1971-12-27 | 1975-11-18 | Ibm | Three-legged magnetic recording head using a magnetorestive element |
| NL168981C (nl) * | 1975-04-15 | 1982-05-17 | Philips Nv | Magnetoweerstand leeskop. |
| JPS5267583A (en) * | 1975-12-03 | 1977-06-04 | Fujitsu Ltd | Magnetic reluctance device |
-
1977
- 1977-11-29 JP JP14224077A patent/JPS5475284A/ja active Pending
-
1978
- 1978-11-28 DE DE19782851330 patent/DE2851330A1/de active Granted
- 1978-11-29 US US05/964,554 patent/US4251795A/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1050868B (OSRAM) * | ||||
| DE2534414A1 (de) * | 1975-08-01 | 1977-02-10 | Precision Electronic Component | Magneto-widerstand und verfahren zu dessen herstellung |
| JPH05267583A (ja) * | 1992-03-18 | 1993-10-15 | Nec Corp | 半導体集積回路装置 |
Non-Patent Citations (1)
| Title |
|---|
| DE-B.: Herbert Weiß "Physik und Anwendung salvanomagnitischer Bauelemente", Sammlung Vieweg 1969, S. 81-83 u. 245-250 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3216147A1 (de) * | 1982-04-30 | 1983-11-03 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Magnetfeldsensor |
Also Published As
| Publication number | Publication date |
|---|---|
| DE2851330C2 (OSRAM) | 1983-07-28 |
| US4251795A (en) | 1981-02-17 |
| JPS5475284A (en) | 1979-06-15 |
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