DE2832012C2 - - Google Patents

Info

Publication number
DE2832012C2
DE2832012C2 DE2832012A DE2832012A DE2832012C2 DE 2832012 C2 DE2832012 C2 DE 2832012C2 DE 2832012 A DE2832012 A DE 2832012A DE 2832012 A DE2832012 A DE 2832012A DE 2832012 C2 DE2832012 C2 DE 2832012C2
Authority
DE
Germany
Prior art keywords
semiconductor body
epitaxial
temperature
doping
treated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2832012A
Other languages
German (de)
English (en)
Other versions
DE2832012A1 (de
Inventor
Gerhard 8200 Rosenheim De Krause
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19782832012 priority Critical patent/DE2832012A1/de
Publication of DE2832012A1 publication Critical patent/DE2832012A1/de
Application granted granted Critical
Publication of DE2832012C2 publication Critical patent/DE2832012C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2654—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds
    • H01L21/26546—Bombardment with radiation with high-energy radiation producing ion implantation in AIIIBV compounds of electrically active species
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/74—Making of localized buried regions, e.g. buried collector layers, internal connections substrate contacts
    • H01L21/743—Making of internal connections, substrate contacts
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/01—Manufacture or treatment
    • H10D84/02—Manufacture or treatment characterised by using material-based technologies
    • H10D84/03—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology
    • H10D84/038—Manufacture or treatment characterised by using material-based technologies using Group IV technology, e.g. silicon technology or silicon-carbide [SiC] technology using silicon technology, e.g. SiGe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices
    • H10D88/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Recrystallisation Techniques (AREA)
DE19782832012 1978-07-20 1978-07-20 Verfahren zum herstellen einer dreidimensionalen integrierten schaltung Granted DE2832012A1 (de)

Priority Applications (1)

Application Number Priority Date Filing Date Title
DE19782832012 DE2832012A1 (de) 1978-07-20 1978-07-20 Verfahren zum herstellen einer dreidimensionalen integrierten schaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19782832012 DE2832012A1 (de) 1978-07-20 1978-07-20 Verfahren zum herstellen einer dreidimensionalen integrierten schaltung

Publications (2)

Publication Number Publication Date
DE2832012A1 DE2832012A1 (de) 1980-01-31
DE2832012C2 true DE2832012C2 (enrdf_load_stackoverflow) 1987-11-12

Family

ID=6044956

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19782832012 Granted DE2832012A1 (de) 1978-07-20 1978-07-20 Verfahren zum herstellen einer dreidimensionalen integrierten schaltung

Country Status (1)

Country Link
DE (1) DE2832012A1 (enrdf_load_stackoverflow)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5853822A (ja) * 1981-09-25 1983-03-30 Toshiba Corp 積層半導体装置
US4597165A (en) * 1983-11-28 1986-07-01 At&T Bell Laboratories Method of making integrated circuits employing ion-bombarded InP layers
US4539743A (en) * 1983-11-28 1985-09-10 At&T Bell Laboratories Production of semiconductor structures with buried resistive or conductive regions by controlled ion bombardment and heat treatment
US4599791A (en) * 1983-11-28 1986-07-15 At&T Bell Laboratories Method of making integrated circuits employing proton-bombarded AlGaAs layers
JPS6213063A (ja) * 1985-07-11 1987-01-21 Nec Corp 化合物半導体多層集積回路
DE3743776C2 (de) * 1987-12-23 1995-08-10 Licentia Gmbh Verfahren zur Herstellung vergrabener Halbleiterbauelemente

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1112992A (en) * 1964-08-18 1968-05-08 Texas Instruments Inc Three-dimensional integrated circuits and methods of making same
DE1589705A1 (de) * 1967-11-15 1970-04-30 Itt Ind Gmbh Deutsche Mehrere elektrische Funktionsstufen enthaltende integrierte Schaltung

Also Published As

Publication number Publication date
DE2832012A1 (de) 1980-01-31

Similar Documents

Publication Publication Date Title
DE3635279C2 (de) Gasphasen-Epitaxieverfahren zur Herstellung eines Verbindungshalbleiter-Eiskristalls
DE2110289C3 (de) Verfahren zum Niederschlagen von Halbleitermaterial und Vorrichtung zu seiner Durchführung
DE3916622A1 (de) Verfahren zum zuechten einer sehr duennen metallschicht und vorrichtung hierfuer
DE2618733A1 (de) Halbleiterbauelement mit heterouebergang
DE2354523C3 (de) Verfahren zur Erzeugung von elektrisch isolierenden Sperrbereichen in Halbleitermaterial
DE2749607C3 (de) Halbleiteranordnung und Verfahren zu deren Herstellung
DE2160450B2 (de) Verfahren zur Herstellung eines Halbleiterbauelementes
EP0852062B1 (de) Dotierverfahren zur herstellung von homoübergängen in halbleitersubstraten
DE68917696T2 (de) Verfahren zur herstellung eines infrarotphotodetektors.
DE2823967A1 (de) Npn-transistor
DE1564191A1 (de) Verfahren zum elektrischen Isolieren verschiedener in einer integrierten oder monolithischen Halbleitervorrichtung zusammengefasster Schaltelemente gegeneinander und gegen das gemeinsame Substrat
DE2615754A1 (de) Aus einem substrat und einer maske gebildete struktur und verfahren zu ihrer herstellung
DE2941268C2 (enrdf_load_stackoverflow)
DE19645033C2 (de) Verfahren zur Bildung eines Metalldrahtes
DE2832012C2 (enrdf_load_stackoverflow)
DE2249832C3 (de) Verfahren zum Herstellen einer Verdrahtungsschicht und Anwendung des Verfahrens zum Herstellen von Mehrschichtenverdrahtungen
DE2025611A1 (enrdf_load_stackoverflow)
DE1919144A1 (de) Mikrominiaturisierte elektronische Schaltung und Verfahren zu ihrer Herstellung
DE2052221B2 (de) Verfahren zum erzeugen einer siliciumoxidschicht auf einem siliciumsubstrat und vorrichtung zur durchfuehrung dieses verfahrens
DE2931432C2 (de) Verfahren zum Eindiffundieren von Aluminium in Silizium-Halbleiterscheiben
EP0307608B1 (de) Anordnung zur Durchführung eines Ausheilprozesses an einer Halbleiterscheibe und Verfahren zum Ausheilen einer Halbleiterscheibe
DE2154386C3 (de) Verfahren zum Herstellen einer epitaktischen Halbleiterschicht auf einem Halbleitersubstrat durch Abscheiden aus einem Reaktionsgas/Trägergas-Gemisch
DE1965408C3 (de) Verfahren zum Herstellen eines Halbleiterbauelementes
DE1923035A1 (de) Verfahren zur Herstellung eines Halbleiterelements mit Passivierfilm
DE3301479A1 (de) Verfahren zum herstellen eines halbleiterelementes

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8125 Change of the main classification

Ipc: H01L 21/72

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee