DE2800893C2 - Verfahren zum Betreiben eines ladungsgekoppelten Halbleiterbauelements und ladungsgekoppeltes Halbleiterbauelement zur Durchführung des Verfahrens - Google Patents
Verfahren zum Betreiben eines ladungsgekoppelten Halbleiterbauelements und ladungsgekoppeltes Halbleiterbauelement zur Durchführung des VerfahrensInfo
- Publication number
- DE2800893C2 DE2800893C2 DE2800893A DE2800893A DE2800893C2 DE 2800893 C2 DE2800893 C2 DE 2800893C2 DE 2800893 A DE2800893 A DE 2800893A DE 2800893 A DE2800893 A DE 2800893A DE 2800893 C2 DE2800893 C2 DE 2800893C2
- Authority
- DE
- Germany
- Prior art keywords
- charge
- potential
- pit
- input
- ccd
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 23
- 238000000034 method Methods 0.000 title claims description 13
- 239000002800 charge carrier Substances 0.000 claims description 15
- 230000005540 biological transmission Effects 0.000 claims description 8
- 239000000758 substrate Substances 0.000 description 19
- 238000009792 diffusion process Methods 0.000 description 7
- 238000005036 potential barrier Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000004888 barrier function Effects 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000012886 linear function Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000011017 operating method Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005591 polysilicon Polymers 0.000 description 1
- 230000036316 preload Effects 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
- G11C19/28—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
- G11C19/282—Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
- G11C19/285—Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/762—Charge transfer devices
- H01L29/765—Charge-coupled devices
- H01L29/768—Charge-coupled devices with field effect produced by an insulated gate
- H01L29/76808—Input structures
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US75818477A | 1977-01-10 | 1977-01-10 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2800893A1 DE2800893A1 (de) | 1978-07-13 |
| DE2800893C2 true DE2800893C2 (de) | 1982-10-14 |
Family
ID=25050832
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2800893A Expired DE2800893C2 (de) | 1977-01-10 | 1978-01-10 | Verfahren zum Betreiben eines ladungsgekoppelten Halbleiterbauelements und ladungsgekoppeltes Halbleiterbauelement zur Durchführung des Verfahrens |
Country Status (16)
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4158209A (en) * | 1977-08-02 | 1979-06-12 | Rca Corporation | CCD comb filters |
| US4139784A (en) * | 1977-08-02 | 1979-02-13 | Rca Corporation | CCD Input circuits |
| US4217605A (en) * | 1978-08-02 | 1980-08-12 | Rca Corporation | Comb filter employing a charge transfer device with plural mutually proportioned signal charge inputs |
| JPS5528523A (en) * | 1978-08-17 | 1980-02-29 | Toshiba Corp | Signal charge input system for charge transfer element |
| DE2836473A1 (de) * | 1978-08-21 | 1980-03-06 | Siemens Ag | Ccd-eingangsschaltung nach dem fill and spill-prinzip |
| DE3138946A1 (de) * | 1981-09-30 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zum betrieb einer mit einem vorschalt-tiefpass versehenen ladungsverschiebeanordnung |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3986198A (en) * | 1973-06-13 | 1976-10-12 | Rca Corporation | Introducing signal at low noise level to charge-coupled circuit |
| JPS5416838B2 (US06229276-20010508-P00022.png) * | 1973-11-29 | 1979-06-25 |
-
1977
- 1977-01-04 AU AU32166/78A patent/AU511885B2/en not_active Expired
- 1977-12-21 IT IT31058/77A patent/IT1089179B/it active
- 1977-12-28 CA CA293,993A patent/CA1101994A/en not_active Expired
-
1978
- 1978-01-03 ZA ZA00780010A patent/ZA7810B/xx unknown
- 1978-01-03 FI FI780012A patent/FI72410C/fi not_active IP Right Cessation
- 1978-01-03 ES ES465682A patent/ES465682A1/es not_active Expired
- 1978-01-04 SE SE7800104A patent/SE437438B/sv not_active IP Right Cessation
- 1978-01-05 GB GB342/78A patent/GB1579033A/en not_active Expired
- 1978-01-09 DK DK8878A patent/DK149674C/da not_active IP Right Cessation
- 1978-01-09 BE BE184205A patent/BE862760A/xx not_active IP Right Cessation
- 1978-01-09 NZ NZ186177A patent/NZ186177A/xx unknown
- 1978-01-09 NL NL7800272A patent/NL7800272A/xx not_active Application Discontinuation
- 1978-01-09 JP JP106078A patent/JPS5387675A/ja active Granted
- 1978-01-10 DE DE2800893A patent/DE2800893C2/de not_active Expired
- 1978-01-10 PL PL1978203913A patent/PL120630B1/pl unknown
- 1978-01-10 FR FR7800570A patent/FR2377127A1/fr active Granted
-
1980
- 1980-10-01 JP JP55138199A patent/JPS5829634B2/ja not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| AU3216678A (en) | 1979-07-12 |
| PL203913A1 (pl) | 1978-07-17 |
| BE862760A (fr) | 1978-05-02 |
| FR2377127A1 (fr) | 1978-08-04 |
| DK149674C (da) | 1987-04-13 |
| CA1101994A (en) | 1981-05-26 |
| FI72410B (fi) | 1987-01-30 |
| DK8878A (da) | 1978-07-11 |
| GB1579033A (en) | 1980-11-12 |
| SE7800104L (sv) | 1978-07-11 |
| DK149674B (da) | 1986-09-01 |
| SE437438B (sv) | 1985-02-25 |
| NL7800272A (nl) | 1978-07-12 |
| NZ186177A (en) | 1981-03-16 |
| DE2800893A1 (de) | 1978-07-13 |
| IT1089179B (it) | 1985-06-18 |
| JPS5829634B2 (ja) | 1983-06-23 |
| JPS5387675A (en) | 1978-08-02 |
| ES465682A1 (es) | 1978-10-01 |
| FI780012A (fi) | 1978-07-11 |
| FR2377127B1 (US06229276-20010508-P00022.png) | 1982-04-30 |
| JPS5649460B2 (US06229276-20010508-P00022.png) | 1981-11-21 |
| ZA7810B (en) | 1978-10-25 |
| PL120630B1 (en) | 1982-03-31 |
| JPS56142670A (en) | 1981-11-07 |
| FI72410C (fi) | 1987-05-11 |
| AU511885B2 (en) | 1980-09-11 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAP | Request for examination filed | ||
| OD | Request for examination | ||
| D2 | Grant after examination | ||
| 8339 | Ceased/non-payment of the annual fee |