IT1089179B - Circuito di ingresso per un dispositivo a trasferimento di carica - Google Patents

Circuito di ingresso per un dispositivo a trasferimento di carica

Info

Publication number
IT1089179B
IT1089179B IT31058/77A IT3105877A IT1089179B IT 1089179 B IT1089179 B IT 1089179B IT 31058/77 A IT31058/77 A IT 31058/77A IT 3105877 A IT3105877 A IT 3105877A IT 1089179 B IT1089179 B IT 1089179B
Authority
IT
Italy
Prior art keywords
transfer device
input circuit
charge transfer
charge
input
Prior art date
Application number
IT31058/77A
Other languages
English (en)
Original Assignee
Rca Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rca Corp filed Critical Rca Corp
Application granted granted Critical
Publication of IT1089179B publication Critical patent/IT1089179B/it

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C19/00Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/28Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements
    • G11C19/282Digital stores in which the information is moved stepwise, e.g. shift registers using semiconductor elements with charge storage in a depletion layer, i.e. charge coupled devices [CCD]
    • G11C19/285Peripheral circuits, e.g. for writing into the first stage; for reading-out of the last stage
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/762Charge transfer devices
    • H01L29/765Charge-coupled devices
    • H01L29/768Charge-coupled devices with field effect produced by an insulated gate
    • H01L29/76808Input structures

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
IT31058/77A 1977-01-10 1977-12-21 Circuito di ingresso per un dispositivo a trasferimento di carica IT1089179B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US75818477A 1977-01-10 1977-01-10

Publications (1)

Publication Number Publication Date
IT1089179B true IT1089179B (it) 1985-06-18

Family

ID=25050832

Family Applications (1)

Application Number Title Priority Date Filing Date
IT31058/77A IT1089179B (it) 1977-01-10 1977-12-21 Circuito di ingresso per un dispositivo a trasferimento di carica

Country Status (16)

Country Link
JP (2) JPS5387675A (it)
AU (1) AU511885B2 (it)
BE (1) BE862760A (it)
CA (1) CA1101994A (it)
DE (1) DE2800893C2 (it)
DK (1) DK149674C (it)
ES (1) ES465682A1 (it)
FI (1) FI72410C (it)
FR (1) FR2377127A1 (it)
GB (1) GB1579033A (it)
IT (1) IT1089179B (it)
NL (1) NL7800272A (it)
NZ (1) NZ186177A (it)
PL (1) PL120630B1 (it)
SE (1) SE437438B (it)
ZA (1) ZA7810B (it)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4158209A (en) * 1977-08-02 1979-06-12 Rca Corporation CCD comb filters
US4139784A (en) * 1977-08-02 1979-02-13 Rca Corporation CCD Input circuits
US4217605A (en) * 1978-08-02 1980-08-12 Rca Corporation Comb filter employing a charge transfer device with plural mutually proportioned signal charge inputs
JPS5528523A (en) * 1978-08-17 1980-02-29 Toshiba Corp Signal charge input system for charge transfer element
DE2836473A1 (de) * 1978-08-21 1980-03-06 Siemens Ag Ccd-eingangsschaltung nach dem fill and spill-prinzip
DE3138946A1 (de) * 1981-09-30 1983-04-14 Siemens AG, 1000 Berlin und 8000 München Verfahren zum betrieb einer mit einem vorschalt-tiefpass versehenen ladungsverschiebeanordnung

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3986198A (en) * 1973-06-13 1976-10-12 Rca Corporation Introducing signal at low noise level to charge-coupled circuit
JPS5416838B2 (it) * 1973-11-29 1979-06-25

Also Published As

Publication number Publication date
NZ186177A (en) 1981-03-16
CA1101994A (en) 1981-05-26
DK149674B (da) 1986-09-01
DE2800893C2 (de) 1982-10-14
FI72410B (fi) 1987-01-30
PL203913A1 (pl) 1978-07-17
GB1579033A (en) 1980-11-12
FR2377127A1 (fr) 1978-08-04
JPS5387675A (en) 1978-08-02
BE862760A (fr) 1978-05-02
PL120630B1 (en) 1982-03-31
DK149674C (da) 1987-04-13
NL7800272A (nl) 1978-07-12
AU3216678A (en) 1979-07-12
SE7800104L (sv) 1978-07-11
AU511885B2 (en) 1980-09-11
JPS5829634B2 (ja) 1983-06-23
FI780012A (fi) 1978-07-11
ZA7810B (en) 1978-10-25
DK8878A (da) 1978-07-11
FI72410C (fi) 1987-05-11
FR2377127B1 (it) 1982-04-30
SE437438B (sv) 1985-02-25
JPS5649460B2 (it) 1981-11-21
DE2800893A1 (de) 1978-07-13
JPS56142670A (en) 1981-11-07
ES465682A1 (es) 1978-10-01

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19951227