DE2751669C2 - Impulsverstärker - Google Patents

Impulsverstärker

Info

Publication number
DE2751669C2
DE2751669C2 DE2751669A DE2751669A DE2751669C2 DE 2751669 C2 DE2751669 C2 DE 2751669C2 DE 2751669 A DE2751669 A DE 2751669A DE 2751669 A DE2751669 A DE 2751669A DE 2751669 C2 DE2751669 C2 DE 2751669C2
Authority
DE
Germany
Prior art keywords
fet
pulse
source
voltage
capacitance
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2751669A
Other languages
German (de)
English (en)
Other versions
DE2751669A1 (de
Inventor
Tadao Tokio/Tokyo Suzuki
Tadao Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of DE2751669A1 publication Critical patent/DE2751669A1/de
Application granted granted Critical
Publication of DE2751669C2 publication Critical patent/DE2751669C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K5/00—Manipulating of pulses not covered by one of the other main groups of this subclass
    • H03K5/01—Shaping pulses
    • H03K5/02—Shaping pulses by amplifying
    • H03K5/023—Shaping pulses by amplifying using field effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Amplifiers (AREA)
  • Electronic Switches (AREA)
DE2751669A 1976-11-18 1977-11-18 Impulsverstärker Expired DE2751669C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP51138819A JPS5942492B2 (ja) 1976-11-18 1976-11-18 プツシユプルパルス増巾回路

Publications (2)

Publication Number Publication Date
DE2751669A1 DE2751669A1 (de) 1978-06-01
DE2751669C2 true DE2751669C2 (de) 1986-09-11

Family

ID=15230960

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2751669A Expired DE2751669C2 (de) 1976-11-18 1977-11-18 Impulsverstärker

Country Status (8)

Country Link
US (1) US4115740A (OSRAM)
JP (1) JPS5942492B2 (OSRAM)
AU (1) AU510709B2 (OSRAM)
CA (1) CA1089543A (OSRAM)
DE (1) DE2751669C2 (OSRAM)
FR (1) FR2371825A1 (OSRAM)
GB (1) GB1554096A (OSRAM)
NL (1) NL188974C (OSRAM)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53136978A (en) * 1977-05-04 1978-11-29 Seiko Instr & Electronics Ltd Semiconductor device
US4316243A (en) * 1979-12-17 1982-02-16 General Electric Company Power FET inverter drive circuit
US4803384A (en) * 1985-10-22 1989-02-07 Fujitsu Limited Pulse amplifier suitable for use in the semiconductor laser driving device
JPH0693613B2 (ja) * 1987-01-16 1994-11-16 三菱電機株式会社 Ｍｉｓトランジスタ回路
US4752703A (en) * 1987-04-23 1988-06-21 Industrial Technology Research Institute Current source polarity switching circuit
US4937470A (en) * 1988-05-23 1990-06-26 Zeiler Kenneth T Driver circuit for power transistors
US4885485A (en) * 1988-08-30 1989-12-05 Vtc Incorporated CMOS Output buffer providing mask programmable output drive current
US4914399A (en) * 1989-03-01 1990-04-03 Minnesota Mining And Manufacturing Company Induction coil driver
US4950924A (en) * 1989-05-11 1990-08-21 Northern Telecom Limited High speed noise immune bipolar logic family
DE69420327T2 (de) * 1993-06-22 2000-03-30 Koninklijke Philips Electronics N.V., Eindhoven Halbleiter-Leistungsschaltung
DE20104214U1 (de) 2001-03-09 2001-05-31 Niggemeyer, Jörg, Dipl.-Phys., 21244 Buchholz Schaltung zur Verringerung von Überschneidungsströmen
JP2007124574A (ja) * 2005-10-31 2007-05-17 Sharp Corp Ｄ級増幅器およびそれを用いた赤外線データ受信装置
US7719141B2 (en) * 2006-11-16 2010-05-18 Star Rf, Inc. Electronic switch network
US20090140791A1 (en) * 2007-11-29 2009-06-04 Young Paul D Switching Element Control
US8547161B1 (en) * 2008-05-08 2013-10-01 Google Inc. Transistor having asymmetric gate-voltage control
CN101674001B (zh) * 2008-09-08 2014-01-01 德昌电机(深圳)有限公司 带有死区控制的桥式驱动电路
JP5484138B2 (ja) 2010-03-12 2014-05-07 ルネサスエレクトロニクス株式会社 電子回路装置
RU2527750C1 (ru) * 2013-04-16 2014-09-10 Государственное образовательное учреждение высшего профессионального образования "Томский государственный университет систем управления и радиоэлектроники" (ТУСУР) Устройство управления амплитудой высоковольтных однополярных импульсов
RU2526280C1 (ru) * 2013-07-26 2014-08-20 ОТКРЫТОЕ АКЦИОНЕРНОЕ ОБЩЕСТВО "Научно-исследовательский институт "Бриз" Усилитель класса abd для гидроакустики
US9379695B2 (en) 2013-12-30 2016-06-28 Infineon Technologies Ag Circuit and method for operating a half-bridge
US20170070223A1 (en) * 2015-06-11 2017-03-09 KSR IP Holdings, LLC Dv/dt control in mosfet gate drive

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5810884B2 (ja) * 1974-09-06 1983-02-28 ヤマハ株式会社 ドライブカイロ
JPS585522B2 (ja) * 1974-12-23 1983-01-31 ソニー株式会社 パルスハバヒヘンチヨウシンゴウゾウフクカイロ
US4028633A (en) * 1976-07-19 1977-06-07 The United States Of America As Represented By The Secretary Of The Navy Drive control to prevent simultaneous conduction in push-pull switching amplifier

Also Published As

Publication number Publication date
NL188974B (nl) 1992-06-16
NL7712769A (nl) 1978-05-22
AU3069777A (en) 1979-05-24
JPS5942492B2 (ja) 1984-10-15
FR2371825A1 (fr) 1978-06-16
AU510709B2 (en) 1980-07-10
US4115740A (en) 1978-09-19
DE2751669A1 (de) 1978-06-01
NL188974C (nl) 1992-11-16
GB1554096A (en) 1979-10-17
FR2371825B1 (OSRAM) 1983-11-18
JPS5363851A (en) 1978-06-07
CA1089543A (en) 1980-11-11

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee