DE2743950A1 - Verfahren und vorrichtung zum abscheiden von halbleitermaterial - Google Patents
Verfahren und vorrichtung zum abscheiden von halbleitermaterialInfo
- Publication number
- DE2743950A1 DE2743950A1 DE19772743950 DE2743950A DE2743950A1 DE 2743950 A1 DE2743950 A1 DE 2743950A1 DE 19772743950 DE19772743950 DE 19772743950 DE 2743950 A DE2743950 A DE 2743950A DE 2743950 A1 DE2743950 A1 DE 2743950A1
- Authority
- DE
- Germany
- Prior art keywords
- tube
- window
- quartz
- gas
- observation window
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 22
- 229910052710 silicon Inorganic materials 0.000 title claims description 16
- 239000010703 silicon Substances 0.000 title claims description 16
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title description 13
- 239000007789 gas Substances 0.000 title description 12
- 238000007689 inspection Methods 0.000 title 1
- 239000010453 quartz Substances 0.000 claims abstract description 24
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910000831 Steel Inorganic materials 0.000 claims abstract description 14
- 239000010959 steel Substances 0.000 claims abstract description 14
- 239000012495 reaction gas Substances 0.000 claims abstract description 13
- 239000000463 material Substances 0.000 claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 3
- 238000000151 deposition Methods 0.000 claims description 12
- 238000000034 method Methods 0.000 claims description 8
- 230000008021 deposition Effects 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 5
- 229910052739 hydrogen Inorganic materials 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- 238000009529 body temperature measurement Methods 0.000 claims description 4
- 150000002366 halogen compounds Chemical class 0.000 claims description 4
- 230000005855 radiation Effects 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 2
- 229910001220 stainless steel Inorganic materials 0.000 claims description 2
- 239000010935 stainless steel Substances 0.000 claims description 2
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 2
- 230000008016 vaporization Effects 0.000 claims 1
- 238000009834 vaporization Methods 0.000 claims 1
- 230000005494 condensation Effects 0.000 abstract 1
- 238000009833 condensation Methods 0.000 abstract 1
- 229910052736 halogen Inorganic materials 0.000 abstract 1
- 150000002367 halogens Chemical class 0.000 abstract 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 238000000926 separation method Methods 0.000 description 4
- 235000012431 wafers Nutrition 0.000 description 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000005137 deposition process Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 239000004809 Teflon Substances 0.000 description 2
- 229920006362 Teflon® Polymers 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000005485 electric heating Methods 0.000 description 1
- 230000005672 electromagnetic field Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000013067 intermediate product Substances 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 229910052756 noble gas Inorganic materials 0.000 description 1
- 239000003921 oil Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
- 150000004756 silanes Chemical class 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/16—Controlling or regulating
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/52—Controlling or regulating the coating process
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystallography & Structural Chemistry (AREA)
- Mechanical Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (7)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772743950 DE2743950A1 (de) | 1977-09-29 | 1977-09-29 | Verfahren und vorrichtung zum abscheiden von halbleitermaterial |
IN958/CAL/78A IN149401B (US06818201-20041116-C00086.png) | 1977-09-29 | 1978-08-31 | |
PL1978209746A PL115365B1 (en) | 1977-09-29 | 1978-09-21 | Apparatus for manufacturing a semiconductive material |
BR7806432A BR7806432A (pt) | 1977-09-29 | 1978-09-28 | Processo e instalacao para deposicao de material semicondutor |
IT28167/78A IT1099206B (it) | 1977-09-29 | 1978-09-28 | Procedimento e dispositivo per la deposizione di materiale semiconduttore |
JP11986878A JPS5458350A (en) | 1977-09-29 | 1978-09-28 | Device for depositing semiconductor material |
SU2667252A SU810086A3 (ru) | 1977-09-29 | 1978-09-29 | Устройство дл получени полупроводниковогоМАТЕРиАлА |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772743950 DE2743950A1 (de) | 1977-09-29 | 1977-09-29 | Verfahren und vorrichtung zum abscheiden von halbleitermaterial |
Publications (2)
Publication Number | Publication Date |
---|---|
DE2743950A1 true DE2743950A1 (de) | 1979-04-12 |
DE2743950C2 DE2743950C2 (US06818201-20041116-C00086.png) | 1987-02-12 |
Family
ID=6020264
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE19772743950 Granted DE2743950A1 (de) | 1977-09-29 | 1977-09-29 | Verfahren und vorrichtung zum abscheiden von halbleitermaterial |
Country Status (7)
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3107421C2 (de) * | 1981-02-27 | 1985-02-14 | Heraeus Quarzschmelze Gmbh, 6450 Hanau | Glocke aus Quarzgut für die Abscheidung von Poly-Silizium |
JPH0239525A (ja) * | 1988-07-29 | 1990-02-08 | Hitachi Ltd | 半導体熱処理装置 |
US9656782B2 (en) | 2010-03-18 | 2017-05-23 | Jong Soo Park | Structure for detachable coupling of containers |
US8613358B2 (en) | 2010-03-18 | 2013-12-24 | Jong Soo Park | Structure for detachable coupling of containers |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1221612B (de) * | 1962-09-15 | 1966-07-28 | Siemens Ag | Vorrichtung zum Konstanthalten der Temperatur eines bei einer pyrolitischen Zersetzung einer Halbleiterverbindung benutzten Traegers |
DE1923042B2 (de) * | 1969-03-17 | 1972-03-16 | Hamco Machine & Electronics, Corp , Rochester, N Y (V St A) | Vorrichtung zur regelung des durchmessers eines aus eienr schmelze gezogenen kristalls |
DE2518853A1 (de) * | 1975-04-28 | 1976-11-04 | Siemens Ag | Reaktionsgefaess zum abscheiden von elementarem silicium |
-
1977
- 1977-09-29 DE DE19772743950 patent/DE2743950A1/de active Granted
-
1978
- 1978-08-31 IN IN958/CAL/78A patent/IN149401B/en unknown
- 1978-09-21 PL PL1978209746A patent/PL115365B1/pl unknown
- 1978-09-28 BR BR7806432A patent/BR7806432A/pt unknown
- 1978-09-28 IT IT28167/78A patent/IT1099206B/it active
- 1978-09-28 JP JP11986878A patent/JPS5458350A/ja active Granted
- 1978-09-29 SU SU2667252A patent/SU810086A3/ru active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE1221612B (de) * | 1962-09-15 | 1966-07-28 | Siemens Ag | Vorrichtung zum Konstanthalten der Temperatur eines bei einer pyrolitischen Zersetzung einer Halbleiterverbindung benutzten Traegers |
DE1923042B2 (de) * | 1969-03-17 | 1972-03-16 | Hamco Machine & Electronics, Corp , Rochester, N Y (V St A) | Vorrichtung zur regelung des durchmessers eines aus eienr schmelze gezogenen kristalls |
DE2518853A1 (de) * | 1975-04-28 | 1976-11-04 | Siemens Ag | Reaktionsgefaess zum abscheiden von elementarem silicium |
Non-Patent Citations (1)
Title |
---|
Römpp: Chemie-Lexikon, 3. Aufl., 1537 * |
Also Published As
Publication number | Publication date |
---|---|
IN149401B (US06818201-20041116-C00086.png) | 1981-11-28 |
PL115365B1 (en) | 1981-03-31 |
IT7828167A0 (it) | 1978-09-28 |
IT1099206B (it) | 1985-09-18 |
BR7806432A (pt) | 1979-05-08 |
JPS5458350A (en) | 1979-05-11 |
PL209746A1 (pl) | 1979-06-04 |
SU810086A3 (ru) | 1981-02-28 |
JPS5639048B2 (US06818201-20041116-C00086.png) | 1981-09-10 |
DE2743950C2 (US06818201-20041116-C00086.png) | 1987-02-12 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8110 | Request for examination paragraph 44 | ||
D2 | Grant after examination | ||
8320 | Willingness to grant licences declared (paragraph 23) | ||
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |