DE2743948A1 - Dynamisches halbleiter-speicherelement - Google Patents
Dynamisches halbleiter-speicherelementInfo
- Publication number
- DE2743948A1 DE2743948A1 DE19772743948 DE2743948A DE2743948A1 DE 2743948 A1 DE2743948 A1 DE 2743948A1 DE 19772743948 DE19772743948 DE 19772743948 DE 2743948 A DE2743948 A DE 2743948A DE 2743948 A1 DE2743948 A1 DE 2743948A1
- Authority
- DE
- Germany
- Prior art keywords
- semiconductor layer
- layer
- word line
- doped
- bit line
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 28
- 239000003990 capacitor Substances 0.000 claims description 13
- 239000012799 electrically-conductive coating Substances 0.000 claims description 2
- 239000002800 charge carrier Substances 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Memories (AREA)
Priority Applications (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772743948 DE2743948A1 (de) | 1977-09-29 | 1977-09-29 | Dynamisches halbleiter-speicherelement |
| GB7837082A GB2005470B (en) | 1977-09-29 | 1978-09-15 | Dynamic semiconductor storage elements |
| FR7826540A FR2404891A1 (fr) | 1977-09-29 | 1978-09-15 | Element dynamique de memoire a semiconducteurs |
| JP11986678A JPS5458384A (en) | 1977-09-29 | 1978-09-28 | Dynamic semiconductor memory cell |
| IT28175/78A IT1098965B (it) | 1977-09-29 | 1978-09-28 | Elemento memorizzatore dinamico a semiconduttori |
| BE190812A BE870894A (fr) | 1977-09-29 | 1978-09-29 | Element dynamique de memoire a semiconducteurs |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19772743948 DE2743948A1 (de) | 1977-09-29 | 1977-09-29 | Dynamisches halbleiter-speicherelement |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2743948A1 true DE2743948A1 (de) | 1979-04-12 |
Family
ID=6020261
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772743948 Withdrawn DE2743948A1 (de) | 1977-09-29 | 1977-09-29 | Dynamisches halbleiter-speicherelement |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5458384A (enrdf_load_stackoverflow) |
| BE (1) | BE870894A (enrdf_load_stackoverflow) |
| DE (1) | DE2743948A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2404891A1 (enrdf_load_stackoverflow) |
| GB (1) | GB2005470B (enrdf_load_stackoverflow) |
| IT (1) | IT1098965B (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4208694A1 (de) * | 1991-03-18 | 1992-09-24 | Toshiba Kawasaki Kk | Halbleiter-speicherbauelement |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2060997A (en) * | 1978-01-03 | 1981-05-07 | Erb D M | Stratified charge memory divide |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3685739A (en) * | 1970-08-07 | 1972-08-22 | Afa Corp | Liquid dispensing apparatus |
| JPS472778U (enrdf_load_stackoverflow) * | 1971-01-27 | 1972-08-31 | ||
| JPS4834939U (enrdf_load_stackoverflow) * | 1971-08-26 | 1973-04-26 | ||
| JPS5137664Y2 (enrdf_load_stackoverflow) * | 1972-07-04 | 1976-09-14 |
-
1977
- 1977-09-29 DE DE19772743948 patent/DE2743948A1/de not_active Withdrawn
-
1978
- 1978-09-15 FR FR7826540A patent/FR2404891A1/fr active Granted
- 1978-09-15 GB GB7837082A patent/GB2005470B/en not_active Expired
- 1978-09-28 IT IT28175/78A patent/IT1098965B/it active
- 1978-09-28 JP JP11986678A patent/JPS5458384A/ja active Pending
- 1978-09-29 BE BE190812A patent/BE870894A/xx unknown
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4208694A1 (de) * | 1991-03-18 | 1992-09-24 | Toshiba Kawasaki Kk | Halbleiter-speicherbauelement |
| US5483482A (en) * | 1991-03-18 | 1996-01-09 | Kabushiki Kaisha Toshiba | Semiconductor memory device having bidirectional potential barrier switching element |
| US5699294A (en) * | 1991-03-18 | 1997-12-16 | Kabushiki Kaisha Toshiba | Semiconductor memory device having bidirectional potential barrier switching element |
Also Published As
| Publication number | Publication date |
|---|---|
| BE870894A (fr) | 1979-01-15 |
| FR2404891B1 (enrdf_load_stackoverflow) | 1983-12-02 |
| IT7828175A0 (it) | 1978-09-28 |
| GB2005470B (en) | 1982-05-26 |
| FR2404891A1 (fr) | 1979-04-27 |
| JPS5458384A (en) | 1979-05-11 |
| IT1098965B (it) | 1985-09-18 |
| GB2005470A (en) | 1979-04-19 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OAM | Search report available | ||
| OC | Search report available | ||
| 8139 | Disposal/non-payment of the annual fee |