JPS5458384A - Dynamic semiconductor memory cell - Google Patents

Dynamic semiconductor memory cell

Info

Publication number
JPS5458384A
JPS5458384A JP11986678A JP11986678A JPS5458384A JP S5458384 A JPS5458384 A JP S5458384A JP 11986678 A JP11986678 A JP 11986678A JP 11986678 A JP11986678 A JP 11986678A JP S5458384 A JPS5458384 A JP S5458384A
Authority
JP
Japan
Prior art keywords
memory cell
semiconductor memory
dynamic semiconductor
dynamic
cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11986678A
Other languages
English (en)
Inventor
Gurasuru Geruharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Publication of JPS5458384A publication Critical patent/JPS5458384A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/35—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices with charge storage in a depletion layer, e.g. charge coupled devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
JP11986678A 1977-09-29 1978-09-28 Dynamic semiconductor memory cell Pending JPS5458384A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19772743948 DE2743948A1 (de) 1977-09-29 1977-09-29 Dynamisches halbleiter-speicherelement

Publications (1)

Publication Number Publication Date
JPS5458384A true JPS5458384A (en) 1979-05-11

Family

ID=6020261

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11986678A Pending JPS5458384A (en) 1977-09-29 1978-09-28 Dynamic semiconductor memory cell

Country Status (6)

Country Link
JP (1) JPS5458384A (ja)
BE (1) BE870894A (ja)
DE (1) DE2743948A1 (ja)
FR (1) FR2404891A1 (ja)
GB (1) GB2005470B (ja)
IT (1) IT1098965B (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2060997A (en) * 1978-01-03 1981-05-07 Erb D M Stratified charge memory divide
JPH04348068A (ja) * 1991-03-18 1992-12-03 Toshiba Corp 半導体記憶装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3685739A (en) * 1970-08-07 1972-08-22 Afa Corp Liquid dispensing apparatus
JPS472778U (ja) * 1971-01-27 1972-08-31
JPS4834939U (ja) * 1971-08-26 1973-04-26
JPS4938569U (ja) * 1972-07-04 1974-04-05

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3685739A (en) * 1970-08-07 1972-08-22 Afa Corp Liquid dispensing apparatus
JPS472778U (ja) * 1971-01-27 1972-08-31
JPS4834939U (ja) * 1971-08-26 1973-04-26
JPS4938569U (ja) * 1972-07-04 1974-04-05

Also Published As

Publication number Publication date
DE2743948A1 (de) 1979-04-12
BE870894A (fr) 1979-01-15
IT1098965B (it) 1985-09-18
FR2404891A1 (fr) 1979-04-27
FR2404891B1 (ja) 1983-12-02
GB2005470A (en) 1979-04-19
GB2005470B (en) 1982-05-26
IT7828175A0 (it) 1978-09-28

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