DE2737150A1 - Verfahren zur herstellung einer halbleiteranordnung - Google Patents

Verfahren zur herstellung einer halbleiteranordnung

Info

Publication number
DE2737150A1
DE2737150A1 DE19772737150 DE2737150A DE2737150A1 DE 2737150 A1 DE2737150 A1 DE 2737150A1 DE 19772737150 DE19772737150 DE 19772737150 DE 2737150 A DE2737150 A DE 2737150A DE 2737150 A1 DE2737150 A1 DE 2737150A1
Authority
DE
Germany
Prior art keywords
layer
gallium
aluminum arsenide
gallium aluminum
arsenide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19772737150
Other languages
German (de)
English (en)
Other versions
DE2737150C2 (cg-RX-API-DMAC10.html
Inventor
Willem Nijman
Peter Jan De Waard
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2737150A1 publication Critical patent/DE2737150A1/de
Application granted granted Critical
Publication of DE2737150C2 publication Critical patent/DE2737150C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/12—Active materials
    • H10F77/124—Active materials comprising only Group III-V materials, e.g. GaAs
    • H10F77/1248—Active materials comprising only Group III-V materials, e.g. GaAs having three or more elements, e.g. GaAlAs, InGaAs or InGaAsP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2907—Materials being Group IIIA-VA materials
    • H10P14/2911—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3202—Materials thereof
    • H10P14/3214—Materials thereof being Group IIIA-VA semiconductors
    • H10P14/3221—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/32—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by intermediate layers between substrates and deposited layers
    • H10P14/3242—Structure
    • H10P14/3244—Layer structure
    • H10P14/3251—Layer structure consisting of three or more layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3414—Deposited materials, e.g. layers characterised by the chemical composition being group IIIA-VIA materials
    • H10P14/3421—Arsenides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/646—Chemical etching of Group III-V materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/227—Buried mesa structure ; Striped active layer
    • H01S5/2275—Buried mesa structure ; Striped active layer mesa created by etching
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials

Landscapes

  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Weting (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Electrodes Of Semiconductors (AREA)
DE19772737150 1976-08-30 1977-08-17 Verfahren zur herstellung einer halbleiteranordnung Granted DE2737150A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7609607A NL7609607A (nl) 1976-08-30 1976-08-30 Werkwijze voor het vervaardigen van een half- geleiderinrichting en halfgeleiderinrichting vervaardigd met behulp van de werkwijze.

Publications (2)

Publication Number Publication Date
DE2737150A1 true DE2737150A1 (de) 1978-03-09
DE2737150C2 DE2737150C2 (cg-RX-API-DMAC10.html) 1989-10-12

Family

ID=19826814

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772737150 Granted DE2737150A1 (de) 1976-08-30 1977-08-17 Verfahren zur herstellung einer halbleiteranordnung

Country Status (12)

Country Link
US (1) US4137107A (cg-RX-API-DMAC10.html)
JP (1) JPS5329666A (cg-RX-API-DMAC10.html)
AR (1) AR210970A1 (cg-RX-API-DMAC10.html)
AU (1) AU504549B2 (cg-RX-API-DMAC10.html)
BR (1) BR7705750A (cg-RX-API-DMAC10.html)
CA (1) CA1090458A (cg-RX-API-DMAC10.html)
DE (1) DE2737150A1 (cg-RX-API-DMAC10.html)
FR (1) FR2363201A1 (cg-RX-API-DMAC10.html)
GB (1) GB1530085A (cg-RX-API-DMAC10.html)
IT (1) IT1086123B (cg-RX-API-DMAC10.html)
NL (1) NL7609607A (cg-RX-API-DMAC10.html)
SE (1) SE7709678L (cg-RX-API-DMAC10.html)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0180457A3 (en) * 1984-10-31 1989-06-07 Fujitsu Limited Semiconductor integrated circuit device and method for producing same
EP0287793A3 (en) * 1987-04-23 1991-03-06 International Business Machines Corporation Integrated circuit substrate product

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7712315A (nl) * 1977-11-09 1979-05-11 Philips Nv Werkwijze voor het epitaxiaal neerslaan van verscheidene lagen.
JPS5563887A (en) * 1978-11-06 1980-05-14 Nec Corp Light-emitting diode
NL7903197A (nl) * 1979-04-24 1980-10-28 Philips Nv Werkwijze voor het vervaardigen van een elektrolumines- cerende halfgeleiderinrichting en elektroluminescerende halfgeleiderinrichting vervaardigd volgens de werkwijze
US4233090A (en) * 1979-06-28 1980-11-11 Rca Corporation Method of making a laser diode
GB2070859B (en) * 1980-02-07 1984-03-21 Stanley Electric Co Ltd Hetero-junction light-emitting diode
US4439910A (en) * 1980-09-29 1984-04-03 Hughes Aircraft Company Process for fabrication of monolithic transistor coupled electroluminescent diode
US4578127A (en) * 1982-08-13 1986-03-25 At&T Bell Laboratories Method of making an improved group III-V semiconductor device utilizing a getter-smoothing layer
US4566171A (en) * 1983-06-20 1986-01-28 At&T Bell Laboratories Elimination of mask undercutting in the fabrication of InP/InGaAsP BH devices
US4661961A (en) * 1983-06-20 1987-04-28 American Telephone And Telegraph Company, At&T Bell Laboratories Buried heterostructure devices with unique contact-facilitating layers
US4788159A (en) * 1986-09-18 1988-11-29 Eastman Kodak Company Process for forming a positive index waveguide
US4818722A (en) * 1986-09-29 1989-04-04 Siemens Aktiengesellschaft Method for generating a strip waveguide
US4897361A (en) * 1987-12-14 1990-01-30 American Telephone & Telegraph Company, At&T Bell Laboratories Patterning method in the manufacture of miniaturized devices

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893044A (en) * 1973-04-12 1975-07-01 Ibm Laser device having enclosed laser cavity
US3936855A (en) * 1974-08-08 1976-02-03 International Telephone And Telegraph Corporation Light-emitting diode fabrication process
US3961996A (en) * 1973-10-23 1976-06-08 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor laser device

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
IT963303B (it) * 1971-07-29 1974-01-10 Licentia Gmbh Laser a semiconduttore
US3824493A (en) * 1972-09-05 1974-07-16 Bell Telephone Labor Inc Fundamental mode, high power operation in double heterostructure junction lasers utilizing a remote monolithic mirror
US3833435A (en) * 1972-09-25 1974-09-03 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
JPS5248066B2 (cg-RX-API-DMAC10.html) * 1974-03-04 1977-12-07
US3915765A (en) * 1973-06-25 1975-10-28 Bell Telephone Labor Inc MBE technique for fabricating semiconductor devices having low series resistance
CA1049127A (en) * 1974-03-05 1979-02-20 Kunio Itoh Semiconductor devices with improved heat radiation and current concentration
US3938172A (en) * 1974-05-22 1976-02-10 Rca Corporation Semiconductor injection laser
GB1531238A (en) * 1975-01-09 1978-11-08 Standard Telephones Cables Ltd Injection lasers

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3893044A (en) * 1973-04-12 1975-07-01 Ibm Laser device having enclosed laser cavity
US3961996A (en) * 1973-10-23 1976-06-08 Mitsubishi Denki Kabushiki Kaisha Process of producing semiconductor laser device
US3936855A (en) * 1974-08-08 1976-02-03 International Telephone And Telegraph Corporation Light-emitting diode fabrication process

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
J. of Appl. Phys., Vol. 45, No. 11, Nov. 1974, pp 4899-4906 *

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0180457A3 (en) * 1984-10-31 1989-06-07 Fujitsu Limited Semiconductor integrated circuit device and method for producing same
EP0287793A3 (en) * 1987-04-23 1991-03-06 International Business Machines Corporation Integrated circuit substrate product

Also Published As

Publication number Publication date
DE2737150C2 (cg-RX-API-DMAC10.html) 1989-10-12
GB1530085A (en) 1978-10-25
FR2363201A1 (fr) 1978-03-24
BR7705750A (pt) 1978-07-04
AR210970A1 (es) 1977-09-30
JPS5329666A (en) 1978-03-20
AU2831577A (en) 1979-03-08
FR2363201B1 (cg-RX-API-DMAC10.html) 1983-02-04
IT1086123B (it) 1985-05-28
AU504549B2 (en) 1979-10-18
SE7709678L (sv) 1978-03-01
JPS567290B2 (cg-RX-API-DMAC10.html) 1981-02-17
CA1090458A (en) 1980-11-25
US4137107A (en) 1979-01-30
NL7609607A (nl) 1978-03-02

Similar Documents

Publication Publication Date Title
DE2109874C3 (de) Halbleiterbauelement mit einem monokristallinen Siliziumkörper und Verfahren zum Herstellen
DE69331816T2 (de) Verfahren zur Herstellung eines Halbleitersubstrats
DE3446961C2 (cg-RX-API-DMAC10.html)
DE69132153T2 (de) Halbleiterbauelemente mit niedrigem Versetzungsfehler und Herstellungsverfahren desselben
DE69906491T2 (de) VERFAHREN ZUR HERSTELLUNG EINER SiCOI-STRUKTUR
DE69126152T2 (de) Lichtemittierende Halbleitervorrichtung mit Gallium-Nitrid-Verbindung
DE3722916C2 (cg-RX-API-DMAC10.html)
DE2737150C2 (cg-RX-API-DMAC10.html)
DE2458745A1 (de) Aus einer lichtemittierenden diode und aus einem mit dieser optisch gekoppelten photodetektor bestehende halbleitervorrichtung
DE2727557A1 (de) Verfahren zur bildung von monokristallinem siliciumcarbid
WO1999038201A1 (de) Verfahren zur herstellung einer einkristallinen schicht auf einem nicht gitterangepassten substrat, sowie eine oder mehrere solcher schichten enthaltendes bauelement
DE68918306T2 (de) Verfahren zum Herstellen einer integrierten optoelektronischen Schaltung.
DE69513469T2 (de) Silizium-auf-Isolator-Substrat und dessen Herstellungsverfahren
DE3013563A1 (de) Bauteil vom isolierstoff-halbleiter- typ, in dem der halbleiter eine iii-v- verbindung und der isolierstoff ein sulfid sind und verfahren zur herstellung eines solchen bauteils
DE3015422A1 (de) Verfahren zur herstellung einer elektrolumineszierenden halbleiteranordnung und durch dieses verfahren hergestellte elektrolumineszierende halbleiteranordnung
EP0390061A2 (de) Verfahren zur Herstellung monolithisch integrierter optoelektronischer Module
DE2757470A1 (de) Verfahren zum herstellen einer halbleiteranordnung
DE2601652C3 (de) Verfahren zur epitaxialen Abscheidung einer Am. Bv Halbleiterschicht auf einem Germaniumsubstrat mit einer (100)-Orientierong
DE3932277A1 (de) Halbleitereinrichtung und verfahren zu ihrer herstellung
DE68928913T2 (de) Halbleiterkommutator
DE3617927C2 (cg-RX-API-DMAC10.html)
DE69227852T2 (de) Eigengetterung für ein epitaxiales Halbleiterplättchen
DE2230749B2 (de) Verfahren zum Herstellen von Halbleiterbauelementen
DE2658304A1 (de) Halbleitervorrichtung
DE3334236C2 (de) Verfahren zum Herstellen einer Halbleiteranordnung

Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee