DE2728144A1 - Verlustarme halbleiterdiode fuer monolithische integrierte schaltung - Google Patents
Verlustarme halbleiterdiode fuer monolithische integrierte schaltungInfo
- Publication number
- DE2728144A1 DE2728144A1 DE19772728144 DE2728144A DE2728144A1 DE 2728144 A1 DE2728144 A1 DE 2728144A1 DE 19772728144 DE19772728144 DE 19772728144 DE 2728144 A DE2728144 A DE 2728144A DE 2728144 A1 DE2728144 A1 DE 2728144A1
- Authority
- DE
- Germany
- Prior art keywords
- layer
- area
- substrate
- zone
- semiconductor element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 10
- 239000000758 substrate Substances 0.000 claims description 28
- 230000000694 effects Effects 0.000 claims description 9
- 238000002955 isolation Methods 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 29
- 238000009792 diffusion process Methods 0.000 description 19
- 230000003071 parasitic effect Effects 0.000 description 8
- 239000002800 charge carrier Substances 0.000 description 7
- 239000002019 doping agent Substances 0.000 description 7
- 230000015556 catabolic process Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000007704 transition Effects 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000003321 amplification Effects 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000003199 nucleic acid amplification method Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000000295 complement effect Effects 0.000 description 1
- 230000006378 damage Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000009291 secondary effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/8611—Planar PN junction diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/761—PN junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/0814—Diodes only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Element Separation (AREA)
- Bipolar Integrated Circuits (AREA)
- Bipolar Transistors (AREA)
- Electrodes Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| IT2453176A IT1063262B (it) | 1976-06-22 | 1976-06-22 | Diodo a semiconduttore a basse perdite per circuito integrato monolitico |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2728144A1 true DE2728144A1 (de) | 1978-01-05 |
Family
ID=11213878
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19772728144 Withdrawn DE2728144A1 (de) | 1976-06-22 | 1977-06-22 | Verlustarme halbleiterdiode fuer monolithische integrierte schaltung |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5319771A (sv) |
| BR (1) | BR7703972A (sv) |
| DE (1) | DE2728144A1 (sv) |
| FR (1) | FR2356275A1 (sv) |
| GB (1) | GB1525556A (sv) |
| IT (1) | IT1063262B (sv) |
| SE (1) | SE422640B (sv) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FI116428B (sv) * | 2001-06-13 | 2005-11-15 | Micro Analog Syst Oy | Spänningsstyrd variabel kondensator, dubbel-epilayer-wafer samt halvledarchip |
-
1976
- 1976-06-22 IT IT2453176A patent/IT1063262B/it active
-
1977
- 1977-06-17 SE SE7707068A patent/SE422640B/sv not_active IP Right Cessation
- 1977-06-20 BR BR7703972A patent/BR7703972A/pt unknown
- 1977-06-21 FR FR7718966A patent/FR2356275A1/fr active Granted
- 1977-06-22 DE DE19772728144 patent/DE2728144A1/de not_active Withdrawn
- 1977-06-22 GB GB2614877A patent/GB1525556A/en not_active Expired
- 1977-06-22 JP JP7341077A patent/JPS5319771A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5319771A (en) | 1978-02-23 |
| IT1063262B (it) | 1985-02-11 |
| BR7703972A (pt) | 1978-04-18 |
| SE7707068L (sv) | 1977-12-23 |
| FR2356275A1 (fr) | 1978-01-20 |
| FR2356275B1 (sv) | 1982-05-14 |
| GB1525556A (en) | 1978-09-20 |
| SE422640B (sv) | 1982-03-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8139 | Disposal/non-payment of the annual fee |