IT1063262B - Diodo a semiconduttore a basse perdite per circuito integrato monolitico - Google Patents

Diodo a semiconduttore a basse perdite per circuito integrato monolitico

Info

Publication number
IT1063262B
IT1063262B IT2453176A IT2453176A IT1063262B IT 1063262 B IT1063262 B IT 1063262B IT 2453176 A IT2453176 A IT 2453176A IT 2453176 A IT2453176 A IT 2453176A IT 1063262 B IT1063262 B IT 1063262B
Authority
IT
Italy
Prior art keywords
integrated circuit
low loss
semiconductor diode
monolithic integrated
loss semiconductor
Prior art date
Application number
IT2453176A
Other languages
English (en)
Italian (it)
Inventor
Pacor Bruno
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Priority to IT2453176A priority Critical patent/IT1063262B/it
Priority to SE7707068A priority patent/SE422640B/sv
Priority to US05/808,369 priority patent/US4117507A/en
Priority to BR7703972A priority patent/BR7703972A/pt
Priority to FR7718966A priority patent/FR2356275A1/fr
Priority to GB2614877A priority patent/GB1525556A/en
Priority to JP7341077A priority patent/JPS5319771A/ja
Priority to DE19772728144 priority patent/DE2728144A1/de
Application granted granted Critical
Publication of IT1063262B publication Critical patent/IT1063262B/it

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
IT2453176A 1976-06-22 1976-06-22 Diodo a semiconduttore a basse perdite per circuito integrato monolitico IT1063262B (it)

Priority Applications (8)

Application Number Priority Date Filing Date Title
IT2453176A IT1063262B (it) 1976-06-22 1976-06-22 Diodo a semiconduttore a basse perdite per circuito integrato monolitico
SE7707068A SE422640B (sv) 1976-06-22 1977-06-17 Halvledarelement med diodfunktion
US05/808,369 US4117507A (en) 1976-06-22 1977-06-20 Diode formed in integrated-circuit structure
BR7703972A BR7703972A (pt) 1976-06-22 1977-06-20 Estrutura de semicondutor,que tem a funcao de diodo,adaptado para a fabricacao de um circuito integrado monolitico
FR7718966A FR2356275A1 (fr) 1976-06-22 1977-06-21 Structure a semi-conducteur a fonction de diode pour circuit integre monolithique
GB2614877A GB1525556A (en) 1976-06-22 1977-06-22 Semiconductor structure having the function of a diode
JP7341077A JPS5319771A (en) 1976-06-22 1977-06-22 Semiconductor device
DE19772728144 DE2728144A1 (de) 1976-06-22 1977-06-22 Verlustarme halbleiterdiode fuer monolithische integrierte schaltung

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2453176A IT1063262B (it) 1976-06-22 1976-06-22 Diodo a semiconduttore a basse perdite per circuito integrato monolitico

Publications (1)

Publication Number Publication Date
IT1063262B true IT1063262B (it) 1985-02-11

Family

ID=11213878

Family Applications (1)

Application Number Title Priority Date Filing Date
IT2453176A IT1063262B (it) 1976-06-22 1976-06-22 Diodo a semiconduttore a basse perdite per circuito integrato monolitico

Country Status (7)

Country Link
JP (1) JPS5319771A (sv)
BR (1) BR7703972A (sv)
DE (1) DE2728144A1 (sv)
FR (1) FR2356275A1 (sv)
GB (1) GB1525556A (sv)
IT (1) IT1063262B (sv)
SE (1) SE422640B (sv)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI116428B (sv) * 2001-06-13 2005-11-15 Micro Analog Syst Oy Spänningsstyrd variabel kondensator, dubbel-epilayer-wafer samt halvledarchip

Also Published As

Publication number Publication date
DE2728144A1 (de) 1978-01-05
JPS5319771A (en) 1978-02-23
BR7703972A (pt) 1978-04-18
SE7707068L (sv) 1977-12-23
FR2356275A1 (fr) 1978-01-20
FR2356275B1 (sv) 1982-05-14
GB1525556A (en) 1978-09-20
SE422640B (sv) 1982-03-15

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Legal Events

Date Code Title Description
TA Fee payment date (situation as of event date), data collected since 19931001

Effective date: 19940629