GB1525556A - Semiconductor structure having the function of a diode - Google Patents

Semiconductor structure having the function of a diode

Info

Publication number
GB1525556A
GB1525556A GB2614877A GB2614877A GB1525556A GB 1525556 A GB1525556 A GB 1525556A GB 2614877 A GB2614877 A GB 2614877A GB 2614877 A GB2614877 A GB 2614877A GB 1525556 A GB1525556 A GB 1525556A
Authority
GB
United Kingdom
Prior art keywords
region
diode
function
semiconductor structure
june
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2614877A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STMicroelectronics SRL
Original Assignee
ATES Componenti Elettronici SpA
SGS ATES Componenti Elettronici SpA
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ATES Componenti Elettronici SpA, SGS ATES Componenti Elettronici SpA filed Critical ATES Componenti Elettronici SpA
Publication of GB1525556A publication Critical patent/GB1525556A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

1525556 Semiconductor devices SGS-ATES COMPONENTI ELETTRONICI SpA 22 June 1977 [22 June 1976] 26148/77 Heading H1K An IC diode having a high reverse saturation voltage is formed in an island 16 defined by isolation regions 14 in a N-semiconducting layer 12 on a P-substrate 10, and includes a P region 18 surrounded by a N<SP>+</SP> region 22 at the surface, and a N<SP>+</SP> region 36 in the P region 18 and surrounding a part 38 thereof at the surface, a metal layer 34 contacting the regions 18, 36.
GB2614877A 1976-06-22 1977-06-22 Semiconductor structure having the function of a diode Expired GB1525556A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2453176A IT1063262B (en) 1976-06-22 1976-06-22 LOW LOSS SEMICONDUCTOR DIODE FOR MONOLITHIC INTEGRATED CIRCUIT

Publications (1)

Publication Number Publication Date
GB1525556A true GB1525556A (en) 1978-09-20

Family

ID=11213878

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2614877A Expired GB1525556A (en) 1976-06-22 1977-06-22 Semiconductor structure having the function of a diode

Country Status (7)

Country Link
JP (1) JPS5319771A (en)
BR (1) BR7703972A (en)
DE (1) DE2728144A1 (en)
FR (1) FR2356275A1 (en)
GB (1) GB1525556A (en)
IT (1) IT1063262B (en)
SE (1) SE422640B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1271659A2 (en) * 2001-06-13 2003-01-02 Micro Analog Systems OY A voltage controlled variable capacitor, a double epilayer wafer, and a semiconductor chip

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1271659A2 (en) * 2001-06-13 2003-01-02 Micro Analog Systems OY A voltage controlled variable capacitor, a double epilayer wafer, and a semiconductor chip
EP1271659A3 (en) * 2001-06-13 2004-10-06 Micro Analog Systems OY A voltage controlled variable capacitor, a double epilayer wafer, and a semiconductor chip

Also Published As

Publication number Publication date
FR2356275A1 (en) 1978-01-20
FR2356275B1 (en) 1982-05-14
BR7703972A (en) 1978-04-18
SE422640B (en) 1982-03-15
JPS5319771A (en) 1978-02-23
IT1063262B (en) 1985-02-11
DE2728144A1 (en) 1978-01-05
SE7707068L (en) 1977-12-23

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Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years

Effective date: 19970621