BR7703972A - SEMICONDUCTOR STRUCTURE, HAS A DIODE FUNCTION, ADAPTED FOR THE MANUFACTURE OF A MONOLITHIC INTEGRATED CIRCUIT - Google Patents

SEMICONDUCTOR STRUCTURE, HAS A DIODE FUNCTION, ADAPTED FOR THE MANUFACTURE OF A MONOLITHIC INTEGRATED CIRCUIT

Info

Publication number
BR7703972A
BR7703972A BR7703972A BR7703972A BR7703972A BR 7703972 A BR7703972 A BR 7703972A BR 7703972 A BR7703972 A BR 7703972A BR 7703972 A BR7703972 A BR 7703972A BR 7703972 A BR7703972 A BR 7703972A
Authority
BR
Brazil
Prior art keywords
manufacture
integrated circuit
semiconductor structure
monolithic integrated
diode function
Prior art date
Application number
BR7703972A
Other languages
Portuguese (pt)
Inventor
B Pacor
Original Assignee
Ates Componenti Elettron
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ates Componenti Elettron filed Critical Ates Componenti Elettron
Publication of BR7703972A publication Critical patent/BR7703972A/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8611—Planar PN junction diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H01L21/761—PN junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0814—Diodes only

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Element Separation (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
  • Electrodes Of Semiconductors (AREA)
BR7703972A 1976-06-22 1977-06-20 SEMICONDUCTOR STRUCTURE, HAS A DIODE FUNCTION, ADAPTED FOR THE MANUFACTURE OF A MONOLITHIC INTEGRATED CIRCUIT BR7703972A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
IT2453176A IT1063262B (en) 1976-06-22 1976-06-22 LOW LOSS SEMICONDUCTOR DIODE FOR MONOLITHIC INTEGRATED CIRCUIT

Publications (1)

Publication Number Publication Date
BR7703972A true BR7703972A (en) 1978-04-18

Family

ID=11213878

Family Applications (1)

Application Number Title Priority Date Filing Date
BR7703972A BR7703972A (en) 1976-06-22 1977-06-20 SEMICONDUCTOR STRUCTURE, HAS A DIODE FUNCTION, ADAPTED FOR THE MANUFACTURE OF A MONOLITHIC INTEGRATED CIRCUIT

Country Status (7)

Country Link
JP (1) JPS5319771A (en)
BR (1) BR7703972A (en)
DE (1) DE2728144A1 (en)
FR (1) FR2356275A1 (en)
GB (1) GB1525556A (en)
IT (1) IT1063262B (en)
SE (1) SE422640B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FI116428B (en) * 2001-06-13 2005-11-15 Micro Analog Syst Oy Voltage controlled variable capacitor, double epilayer wafer and semiconductor chip

Also Published As

Publication number Publication date
IT1063262B (en) 1985-02-11
FR2356275B1 (en) 1982-05-14
JPS5319771A (en) 1978-02-23
FR2356275A1 (en) 1978-01-20
DE2728144A1 (en) 1978-01-05
SE422640B (en) 1982-03-15
SE7707068L (en) 1977-12-23
GB1525556A (en) 1978-09-20

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