BE873652A - Circuit integre a semi-conducteur - Google Patents

Circuit integre a semi-conducteur

Info

Publication number
BE873652A
BE873652A BE193036A BE193036A BE873652A BE 873652 A BE873652 A BE 873652A BE 193036 A BE193036 A BE 193036A BE 193036 A BE193036 A BE 193036A BE 873652 A BE873652 A BE 873652A
Authority
BE
Belgium
Prior art keywords
integrated circuit
semiconductor integrated
semiconductor
circuit
integrated
Prior art date
Application number
BE193036A
Other languages
English (en)
Original Assignee
Western Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co filed Critical Western Electric Co
Publication of BE873652A publication Critical patent/BE873652A/fr

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/08Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
    • H01L27/0802Resistors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/04Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
    • H01L27/10Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H01L27/101Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including resistors or capacitors only
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/8605Resistors with PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Ceramic Engineering (AREA)
  • Semiconductor Integrated Circuits (AREA)
BE193036A 1978-01-25 1979-01-23 Circuit integre a semi-conducteur BE873652A (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US87217378A 1978-01-25 1978-01-25

Publications (1)

Publication Number Publication Date
BE873652A true BE873652A (fr) 1979-05-16

Family

ID=25358994

Family Applications (1)

Application Number Title Priority Date Filing Date
BE193036A BE873652A (fr) 1978-01-25 1979-01-23 Circuit integre a semi-conducteur

Country Status (8)

Country Link
JP (1) JPS54121083A (fr)
BE (1) BE873652A (fr)
DE (1) DE2902494A1 (fr)
FR (1) FR2415878A1 (fr)
GB (1) GB2016208A (fr)
IT (1) IT7967158A0 (fr)
NL (1) NL7900530A (fr)
SE (1) SE7900379L (fr)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2430092A1 (fr) * 1978-06-29 1980-01-25 Ibm France Procede de correction du coefficient en tension de resistances semi-conductrices, diffusees ou implantees et resistances ainsi obtenues
JPS55123157A (en) * 1979-03-16 1980-09-22 Oki Electric Ind Co Ltd High-stability ion-injected resistor
JPS5864059A (ja) * 1981-10-14 1983-04-16 Hitachi Ltd 高耐圧抵抗素子
GB2232530B (en) * 1988-11-22 1993-09-22 Seiko Epson Corp A high precision semiconductor resistor device
US7439146B1 (en) * 2000-08-30 2008-10-21 Agere Systems Inc. Field plated resistor with enhanced routing area thereover
US6458669B1 (en) * 2000-08-30 2002-10-01 Agere Systems Guardian Corp. Method of manufacturing an integrated circuit

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3683491A (en) * 1970-11-12 1972-08-15 Carroll E Nelson Method for fabricating pinched resistor semiconductor structure
US4058887A (en) * 1971-02-19 1977-11-22 Ibm Corporation Method for forming a transistor comprising layers of silicon dioxide and silicon nitride
US3873372A (en) * 1973-07-09 1975-03-25 Ibm Method for producing improved transistor devices
DE2435606C3 (de) * 1974-07-24 1979-03-01 Siemens Ag, 1000 Berlin Und 8000 Muenchen Reihenschaltung aus Feldeffekttransistoren zur Realisierung eines hxxochohmigen linearen Widerstandes
US4001612A (en) * 1975-12-17 1977-01-04 International Business Machines Corporation Linear resistance element for lsi circuitry
FR2351505A1 (fr) * 1976-05-13 1977-12-09 Ibm France Procede de correction du coefficient en tension de resistances semi-conductrices, implantees ou diffusees

Also Published As

Publication number Publication date
IT7967158A0 (it) 1979-01-24
NL7900530A (nl) 1979-07-27
JPS54121083A (en) 1979-09-19
SE7900379L (sv) 1979-07-26
GB2016208A (en) 1979-09-19
FR2415878A1 (fr) 1979-08-24
DE2902494A1 (de) 1979-07-26

Similar Documents

Publication Publication Date Title
GB2014785B (en) Semiconductor integrated circuit devices
PL212822A1 (pl) Przyrzad polprzewodnikowy
NL189889C (nl) Geintegreerde halfgeleiderschakeling.
DK71980A (da) Brokonverterkredsloeb
JPS5591856A (en) Semiconductor integrated circuit chip structure
JPS54154290A (en) Planar semiconductor integrated circuit
SE7712295L (sv) Integrerad krets
IT1140065B (it) Circuito integrato a semiconduttori
IT1192735B (it) Circuito integrato su larghissima scala
PL213695A1 (pl) Przelacznik polprzewodnikowy
IT1123267B (it) Struttura a circuito integrato
SE7900083L (sv) Halvledaranordning
DE2965630D1 (en) Semiconductor circuit
DE2964308D1 (en) Semiconductor integrated circuit device
IT1141374B (it) Circuito integrato a semiconduttori
FR2553542B1 (fr) Circuit integre a semi-conducteurs
SE7901551L (sv) Integrerad krets
GB2043337B (en) Semiconductor integrated circuit devices
SE7813077L (sv) Ekodempande krets
BE879196A (fr) Dispositif a semi-conducteur
DE2962516D1 (en) Semiconductor integrated circuit device
DK525979A (da) Halvleder-ladnngsoverfoeringsanordning
DE2964943D1 (en) Semiconductor integrated memory circuit
SE7902980L (sv) Halvledaranordning
IT1110167B (it) Circuito integrato semiconduttore