DE2726813C2 - Verfahren zur Herstellung eines mit einem Muster versehenen Substrats - Google Patents
Verfahren zur Herstellung eines mit einem Muster versehenen SubstratsInfo
- Publication number
- DE2726813C2 DE2726813C2 DE2726813A DE2726813A DE2726813C2 DE 2726813 C2 DE2726813 C2 DE 2726813C2 DE 2726813 A DE2726813 A DE 2726813A DE 2726813 A DE2726813 A DE 2726813A DE 2726813 C2 DE2726813 C2 DE 2726813C2
- Authority
- DE
- Germany
- Prior art keywords
- photoresist
- layer
- plasma
- substrate
- mask
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
-
- H10P50/287—
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US69730376A | 1976-06-17 | 1976-06-17 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2726813A1 DE2726813A1 (de) | 1977-12-29 |
| DE2726813C2 true DE2726813C2 (de) | 1984-02-23 |
Family
ID=24800591
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2726813A Expired DE2726813C2 (de) | 1976-06-17 | 1977-06-14 | Verfahren zur Herstellung eines mit einem Muster versehenen Substrats |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPS52155531A (cg-RX-API-DMAC10.html) |
| DE (1) | DE2726813C2 (cg-RX-API-DMAC10.html) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3913434A1 (de) * | 1989-04-24 | 1990-10-25 | Siemens Ag | Trockenwickelbares resistsystem |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4187331A (en) * | 1978-08-24 | 1980-02-05 | International Business Machines Corp. | Fluorine plasma resist image hardening |
| JPS5565365A (en) * | 1978-11-07 | 1980-05-16 | Nippon Telegr & Teleph Corp <Ntt> | Pattern forming method |
| JPS5569265A (en) * | 1978-11-15 | 1980-05-24 | Hitachi Ltd | Pattern-forming method |
| US4232110A (en) * | 1979-03-12 | 1980-11-04 | Bell Telephone Laboratories, Incorporated | Solid state devices formed by differential plasma etching of resists |
| US4278753A (en) | 1980-02-25 | 1981-07-14 | Horizons Research Incorporated | Plasma developable photoresist composition with polyvinyl formal binder |
| JPS56137347A (en) * | 1980-03-29 | 1981-10-27 | Tokyo Ohka Kogyo Co Ltd | Photosensitive composition for dry development |
| DE3015469A1 (de) * | 1980-04-22 | 1981-10-29 | Dai Nippon Printing Co., Ltd. | Flachdruckplatte fuer trocken-flachdruck und verfahren zur herstellung derselben |
| JPS5744143A (en) * | 1980-08-29 | 1982-03-12 | Tokyo Ohka Kogyo Co Ltd | Composition and method for forming micropattern |
| JPS585735A (ja) * | 1981-06-01 | 1983-01-13 | Daikin Ind Ltd | 基板上にパタ−ンが形成されたレジスト被膜を製造する方法 |
| JPS582025A (ja) * | 1981-06-29 | 1983-01-07 | Fujitsu Ltd | パタ−ン形成方法 |
| JPS5860537A (ja) * | 1981-10-07 | 1983-04-11 | Tokyo Ohka Kogyo Co Ltd | 乾式パタ−ン形成方法 |
| JPS58117539A (ja) * | 1981-12-30 | 1983-07-13 | Tokyo Denshi Kagaku Kabushiki | 乾式現像の終点検知方法 |
| US4497891A (en) * | 1983-10-25 | 1985-02-05 | International Business Machines Corporation | Dry-developed, negative working electron resist system |
| EP0465064B1 (en) * | 1990-06-29 | 1998-12-09 | Fujitsu Limited | Process for forming patterns |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3705055A (en) * | 1970-09-18 | 1972-12-05 | Western Electric Co | Method of descumming photoresist patterns |
| JPS5226274B2 (cg-RX-API-DMAC10.html) * | 1973-01-25 | 1977-07-13 | ||
| JPS52376B2 (cg-RX-API-DMAC10.html) * | 1973-12-10 | 1977-01-07 | ||
| JPS5151938A (en) * | 1974-10-31 | 1976-05-07 | Tokyo Ohka Kogyo Co Ltd | Fuotorejisutono kaikahoho |
| US3920483A (en) * | 1974-11-25 | 1975-11-18 | Ibm | Method of ion implantation through a photoresist mask |
| JPS5272175A (en) * | 1975-12-12 | 1977-06-16 | Mitsubishi Electric Corp | Mask patterning of resist meterial |
-
1977
- 1977-06-14 DE DE2726813A patent/DE2726813C2/de not_active Expired
- 1977-06-17 JP JP7117777A patent/JPS52155531A/ja active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3913434A1 (de) * | 1989-04-24 | 1990-10-25 | Siemens Ag | Trockenwickelbares resistsystem |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5712138B2 (cg-RX-API-DMAC10.html) | 1982-03-09 |
| JPS52155531A (en) | 1977-12-24 |
| DE2726813A1 (de) | 1977-12-29 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8110 | Request for examination paragraph 44 | ||
| 8125 | Change of the main classification |
Ipc: G03F 7/00 |
|
| 8126 | Change of the secondary classification |
Ipc: H01L 21/306 |
|
| 8128 | New person/name/address of the agent |
Representative=s name: GRUENECKER, A., DIPL.-ING. KINKELDEY, H., DIPL.-IN |
|
| D2 | Grant after examination | ||
| 8363 | Opposition against the patent | ||
| 8365 | Fully valid after opposition proceedings | ||
| 8380 | Miscellaneous part iii |
Free format text: ES ERFOLGT NEUDRUCK DER PATENTSCHRIFT NACH AUFRECHTERHALTUNG |
|
| 8339 | Ceased/non-payment of the annual fee |