JPS52155531A - Dry photo resist developing method - Google Patents

Dry photo resist developing method

Info

Publication number
JPS52155531A
JPS52155531A JP7117777A JP7117777A JPS52155531A JP S52155531 A JPS52155531 A JP S52155531A JP 7117777 A JP7117777 A JP 7117777A JP 7117777 A JP7117777 A JP 7117777A JP S52155531 A JPS52155531 A JP S52155531A
Authority
JP
Japan
Prior art keywords
developing method
photo resist
resist developing
dry photo
dry
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7117777A
Other languages
English (en)
Japanese (ja)
Other versions
JPS5712138B2 (cg-RX-API-DMAC10.html
Inventor
Guentaa Hiyuusu Henrii
Bui Keraa Jiedo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Motorola Solutions Inc
Original Assignee
Motorola Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Motorola Inc filed Critical Motorola Inc
Publication of JPS52155531A publication Critical patent/JPS52155531A/ja
Publication of JPS5712138B2 publication Critical patent/JPS5712138B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P50/287—
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26—Processing photosensitive materials; Apparatus therefor
    • G03F7/36—Imagewise removal not covered by groups G03F7/30 - G03F7/34, e.g. using gas streams, using plasma

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Drying Of Semiconductors (AREA)
JP7117777A 1976-06-17 1977-06-17 Dry photo resist developing method Granted JPS52155531A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US69730376A 1976-06-17 1976-06-17

Publications (2)

Publication Number Publication Date
JPS52155531A true JPS52155531A (en) 1977-12-24
JPS5712138B2 JPS5712138B2 (cg-RX-API-DMAC10.html) 1982-03-09

Family

ID=24800591

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7117777A Granted JPS52155531A (en) 1976-06-17 1977-06-17 Dry photo resist developing method

Country Status (2)

Country Link
JP (1) JPS52155531A (cg-RX-API-DMAC10.html)
DE (1) DE2726813C2 (cg-RX-API-DMAC10.html)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56137347A (en) * 1980-03-29 1981-10-27 Tokyo Ohka Kogyo Co Ltd Photosensitive composition for dry development
JPS5744143A (en) * 1980-08-29 1982-03-12 Tokyo Ohka Kogyo Co Ltd Composition and method for forming micropattern
JPS582025A (ja) * 1981-06-29 1983-01-07 Fujitsu Ltd パタ−ン形成方法
JPS585735A (ja) * 1981-06-01 1983-01-13 Daikin Ind Ltd 基板上にパタ−ンが形成されたレジスト被膜を製造する方法
JPS5860537A (ja) * 1981-10-07 1983-04-11 Tokyo Ohka Kogyo Co Ltd 乾式パタ−ン形成方法
JPS58117539A (ja) * 1981-12-30 1983-07-13 Tokyo Denshi Kagaku Kabushiki 乾式現像の終点検知方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4187331A (en) * 1978-08-24 1980-02-05 International Business Machines Corp. Fluorine plasma resist image hardening
JPS5565365A (en) * 1978-11-07 1980-05-16 Nippon Telegr & Teleph Corp <Ntt> Pattern forming method
JPS5569265A (en) * 1978-11-15 1980-05-24 Hitachi Ltd Pattern-forming method
US4232110A (en) * 1979-03-12 1980-11-04 Bell Telephone Laboratories, Incorporated Solid state devices formed by differential plasma etching of resists
US4278753A (en) 1980-02-25 1981-07-14 Horizons Research Incorporated Plasma developable photoresist composition with polyvinyl formal binder
DE3015469A1 (de) * 1980-04-22 1981-10-29 Dai Nippon Printing Co., Ltd. Flachdruckplatte fuer trocken-flachdruck und verfahren zur herstellung derselben
US4497891A (en) * 1983-10-25 1985-02-05 International Business Machines Corporation Dry-developed, negative working electron resist system
DE3913434A1 (de) * 1989-04-24 1990-10-25 Siemens Ag Trockenwickelbares resistsystem
EP0465064B1 (en) * 1990-06-29 1998-12-09 Fujitsu Limited Process for forming patterns

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4999558A (cg-RX-API-DMAC10.html) * 1973-01-25 1974-09-20
JPS5090330A (cg-RX-API-DMAC10.html) * 1973-12-10 1975-07-19
JPS5151938A (en) * 1974-10-31 1976-05-07 Tokyo Ohka Kogyo Co Ltd Fuotorejisutono kaikahoho
JPS5272175A (en) * 1975-12-12 1977-06-16 Mitsubishi Electric Corp Mask patterning of resist meterial

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3705055A (en) * 1970-09-18 1972-12-05 Western Electric Co Method of descumming photoresist patterns
US3920483A (en) * 1974-11-25 1975-11-18 Ibm Method of ion implantation through a photoresist mask

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4999558A (cg-RX-API-DMAC10.html) * 1973-01-25 1974-09-20
JPS5090330A (cg-RX-API-DMAC10.html) * 1973-12-10 1975-07-19
JPS5151938A (en) * 1974-10-31 1976-05-07 Tokyo Ohka Kogyo Co Ltd Fuotorejisutono kaikahoho
JPS5272175A (en) * 1975-12-12 1977-06-16 Mitsubishi Electric Corp Mask patterning of resist meterial

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56137347A (en) * 1980-03-29 1981-10-27 Tokyo Ohka Kogyo Co Ltd Photosensitive composition for dry development
JPS5744143A (en) * 1980-08-29 1982-03-12 Tokyo Ohka Kogyo Co Ltd Composition and method for forming micropattern
JPS585735A (ja) * 1981-06-01 1983-01-13 Daikin Ind Ltd 基板上にパタ−ンが形成されたレジスト被膜を製造する方法
JPS582025A (ja) * 1981-06-29 1983-01-07 Fujitsu Ltd パタ−ン形成方法
JPS5860537A (ja) * 1981-10-07 1983-04-11 Tokyo Ohka Kogyo Co Ltd 乾式パタ−ン形成方法
JPS58117539A (ja) * 1981-12-30 1983-07-13 Tokyo Denshi Kagaku Kabushiki 乾式現像の終点検知方法

Also Published As

Publication number Publication date
JPS5712138B2 (cg-RX-API-DMAC10.html) 1982-03-09
DE2726813C2 (de) 1984-02-23
DE2726813A1 (de) 1977-12-29

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