IT1087502B - Complesso fotosensibile - Google Patents

Complesso fotosensibile

Info

Publication number
IT1087502B
IT1087502B IT26900/77A IT2690077A IT1087502B IT 1087502 B IT1087502 B IT 1087502B IT 26900/77 A IT26900/77 A IT 26900/77A IT 2690077 A IT2690077 A IT 2690077A IT 1087502 B IT1087502 B IT 1087502B
Authority
IT
Italy
Prior art keywords
photosensitive complex
photosensitive
complex
Prior art date
Application number
IT26900/77A
Other languages
English (en)
Original Assignee
Philips Nv
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Nv filed Critical Philips Nv
Application granted granted Critical
Publication of IT1087502B publication Critical patent/IT1087502B/it

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
    • G11C13/04—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam
    • G11C13/06—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using optical elements ; using other beam accessed elements, e.g. electron or ion beam using magneto-optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/28—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors
    • H10F30/2823—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices being characterised by field-effect operation, e.g. junction field-effect phototransistors the devices being conductor-insulator-semiconductor devices, e.g. diodes or charge-coupled devices [CCD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/103—Integrated devices the at least one element covered by H10F30/00 having potential barriers, e.g. integrated devices comprising photodiodes or phototransistors
IT26900/77A 1976-08-26 1977-08-23 Complesso fotosensibile IT1087502B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB35533/76A GB1559312A (en) 1976-08-26 1976-08-26 Photosensitive device arrangements and systems and photosensitive elements therefor

Publications (1)

Publication Number Publication Date
IT1087502B true IT1087502B (it) 1985-06-04

Family

ID=10378792

Family Applications (1)

Application Number Title Priority Date Filing Date
IT26900/77A IT1087502B (it) 1976-08-26 1977-08-23 Complesso fotosensibile

Country Status (7)

Country Link
US (1) US4245233A (it)
AU (1) AU508434B2 (it)
DE (1) DE2736734A1 (it)
FR (1) FR2363198A1 (it)
GB (1) GB1559312A (it)
IT (1) IT1087502B (it)
SE (1) SE7709469L (it)

Families Citing this family (22)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4829354A (en) * 1980-12-04 1989-05-09 Westinghouse Electric Corp. Drift field switch
FR2526987B1 (fr) * 1982-05-14 1987-07-03 Bull Sa Procede opto-electronique de lecture d'informations contenues sur un support magnetique et circuit pour le mettre en oeuvre
US4675714A (en) * 1983-02-15 1987-06-23 Rockwell International Corporation Gapless gate charge coupled device
ATE77899T1 (de) * 1984-04-25 1992-07-15 Josef Kemmer Verarmtes halbleiterelement mit einem potential- minimum fuer majoritaetstraeger.
US4894689A (en) * 1984-12-28 1990-01-16 American Telephone And Telegraph Company, At&T Bell Laboratories Transferred electron device
US4709381A (en) * 1986-03-19 1987-11-24 Westinghouse Electric Corp. CCD focal plane array convolver
US4968044A (en) * 1987-12-14 1990-11-06 P And C Engineering And Development Rotary facial seal and bearing assembly
US4992842A (en) * 1988-07-07 1991-02-12 Tektronix, Inc. Charge-coupled device channel with countinously graded built-in potential
US5065203A (en) * 1988-07-07 1991-11-12 Tektronix, Inc. Trench structured charge-coupled device
US4916306A (en) * 1988-07-14 1990-04-10 Tektronix Device for detecting spatial variation in the intensity of electromagnetic radiation
GB2389960A (en) * 2002-06-20 2003-12-24 Suisse Electronique Microtech Four-tap demodulation pixel
JP4189549B2 (ja) * 2002-11-29 2008-12-03 独立行政法人科学技術振興機構 情報記憶素子及びその製造方法並びにメモリアレイ
EP1583150A1 (en) * 2004-03-31 2005-10-05 CSEM Centre Suisse d'Electronique et de Microtechnique SA Image sensor with large-area, high-sensitivity and high-speed pixels
US20070034978A1 (en) * 2004-06-17 2007-02-15 Pralle Martin U Photonic crystal emitter, detector and sensor
JP5174458B2 (ja) * 2004-07-08 2013-04-03 イオン オプティクス インコーポレイテッド 調整可能なフォトニック結晶
EP1624490B1 (en) * 2004-08-04 2018-10-03 Heptagon Micro Optics Pte. Ltd. Large-area pixel for use in an image sensor
US8336887B2 (en) * 2006-05-02 2012-12-25 Petrak Gregory H Seal assembly
DE102007048890B3 (de) * 2007-10-11 2009-03-19 MAX-PLANCK-Gesellschaft zur Förderung der Wissenschaften e.V. DEPFET-Transistor mit großem Dynamikbereich und Halbleiterdetektor
DE102009020218B8 (de) 2009-05-07 2011-05-12 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Detektor und Verfahren zum Detektieren elektromagnetischer Strahlung und Computerprogramm zur Durchführung des Verfahrens
US8283198B2 (en) 2010-05-10 2012-10-09 Micron Technology, Inc. Resistive memory and methods of processing resistive memory
US9180288B2 (en) 2011-09-01 2015-11-10 Zoll Medical Corporation Medical equipment electrodes
DE102024136606B3 (de) 2024-12-09 2026-03-05 Quantum Technologies Gmbh NV-Zentren basierende Wirbelstromkamera

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3391282A (en) * 1965-02-19 1968-07-02 Fairchild Camera Instr Co Variable length photodiode using an inversion plate
US3858232A (en) * 1970-02-16 1974-12-31 Bell Telephone Labor Inc Information storage devices
US3623132A (en) * 1970-12-14 1971-11-23 North American Rockwell Charge sensing circuit
US3796932A (en) * 1971-06-28 1974-03-12 Bell Telephone Labor Inc Charge coupled devices employing nonuniform concentrations of immobile charge along the information channel
US3796933A (en) * 1971-11-10 1974-03-12 Ibm Single-phase charge-coupled semiconductor device
NL181766C (nl) * 1973-03-19 1987-10-16 Philips Nv Ladingsgekoppelde halfgeleiderschakeling, waarbij pakketten meerderheidsladingsdragers door een halfgeleiderlaag evenwijdig aan de halfgeleiderlaag kunnen worden overgedragen.
DE2523683C2 (de) * 1975-05-28 1985-03-07 Siemens AG, 1000 Berlin und 8000 München Integrierte Schaltung mit einer Leitung zum Transport von Ladungen zwischen Speicherelementen eines Halbleiterspeichers und einer Schreib-Lese-Schaltung
US4019199A (en) * 1975-12-22 1977-04-19 International Business Machines Corporation Highly sensitive charge-coupled photodetector including an electrically isolated reversed biased diffusion region for eliminating an inversion layer
GB1551935A (en) * 1976-08-19 1979-09-05 Philips Nv Imaging devices

Also Published As

Publication number Publication date
US4245233A (en) 1981-01-13
AU508434B2 (en) 1980-03-20
SE7709469L (sv) 1978-02-27
GB1559312A (en) 1980-01-16
FR2363198A1 (fr) 1978-03-24
DE2736734A1 (de) 1978-03-02
AU2826377A (en) 1979-03-01

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