DE102009020218B8 - Detektor und Verfahren zum Detektieren elektromagnetischer Strahlung und Computerprogramm zur Durchführung des Verfahrens - Google Patents

Detektor und Verfahren zum Detektieren elektromagnetischer Strahlung und Computerprogramm zur Durchführung des Verfahrens Download PDF

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Publication number
DE102009020218B8
DE102009020218B8 DE102009020218A DE102009020218A DE102009020218B8 DE 102009020218 B8 DE102009020218 B8 DE 102009020218B8 DE 102009020218 A DE102009020218 A DE 102009020218A DE 102009020218 A DE102009020218 A DE 102009020218A DE 102009020218 B8 DE102009020218 B8 DE 102009020218B8
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Prior art keywords
detector
carrying
computer program
electromagnetic radiation
detecting electromagnetic
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DE102009020218A
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DE102009020218B3 (de
Inventor
Daniel Durini Romero
Werner Brockherde
Bedrich J. Hosticka
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Volkswagen AG
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Fraunhofer Gesellschaft zur Forderung der Angewandten Forschung eV
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Priority to DE102009020218A priority Critical patent/DE102009020218B8/de
Priority to US12/775,204 priority patent/US8324549B2/en
Publication of DE102009020218B3 publication Critical patent/DE102009020218B3/de
Application granted granted Critical
Publication of DE102009020218B8 publication Critical patent/DE102009020218B8/de
Priority to US13/677,140 priority patent/US8748794B2/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14609—Pixel-elements with integrated switching, control, storage or amplification elements
    • H01L27/14612—Pixel-elements with integrated switching, control, storage or amplification elements involving a transistor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H01L27/14689—MOS based technologies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/09—Devices sensitive to infrared, visible or ultraviolet radiation
DE102009020218A 2009-05-07 2009-05-07 Detektor und Verfahren zum Detektieren elektromagnetischer Strahlung und Computerprogramm zur Durchführung des Verfahrens Active DE102009020218B8 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE102009020218A DE102009020218B8 (de) 2009-05-07 2009-05-07 Detektor und Verfahren zum Detektieren elektromagnetischer Strahlung und Computerprogramm zur Durchführung des Verfahrens
US12/775,204 US8324549B2 (en) 2009-05-07 2010-05-06 Detector for detecting electromagnetic radiation having dopant concentration of a well increases monotonically in the direction parallel to the surface of a semiconductor substrate
US13/677,140 US8748794B2 (en) 2009-05-07 2012-11-14 Time-of-flight 3D imaging system comprising a detector for detecting electromagnetic radiation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE102009020218A DE102009020218B8 (de) 2009-05-07 2009-05-07 Detektor und Verfahren zum Detektieren elektromagnetischer Strahlung und Computerprogramm zur Durchführung des Verfahrens

Publications (2)

Publication Number Publication Date
DE102009020218B3 DE102009020218B3 (de) 2011-01-13
DE102009020218B8 true DE102009020218B8 (de) 2011-05-12

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DE102009020218A Active DE102009020218B8 (de) 2009-05-07 2009-05-07 Detektor und Verfahren zum Detektieren elektromagnetischer Strahlung und Computerprogramm zur Durchführung des Verfahrens

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US (2) US8324549B2 (de)
DE (1) DE102009020218B8 (de)

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FR2986906B1 (fr) * 2012-02-15 2015-06-19 New Imaging Technologies Sas Structure de pixel actif a transfert de charge ameliore
DE102012206089B4 (de) 2012-03-15 2017-02-02 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Halbleiterstruktur, verfahren zum betreiben derselben und herstellungsverfahren
US9871544B2 (en) 2013-05-29 2018-01-16 Microsoft Technology Licensing, Llc Specific absorption rate mitigation
US10893488B2 (en) 2013-06-14 2021-01-12 Microsoft Technology Licensing, Llc Radio frequency (RF) power back-off optimization for specific absorption rate (SAR) compliance
US9768340B2 (en) * 2013-11-25 2017-09-19 Texas Instruments Incorporated Photodiode with a dark current suppression junction
US9563316B2 (en) 2014-01-10 2017-02-07 Microsoft Technology Licensing, Llc Radiofrequency-wave-transparent capacitive sensor pad
US10044095B2 (en) 2014-01-10 2018-08-07 Microsoft Technology Licensing, Llc Radiating structure with integrated proximity sensing
US9813997B2 (en) 2014-01-10 2017-11-07 Microsoft Technology Licensing, Llc Antenna coupling for sensing and dynamic transmission
DE102014101208A1 (de) 2014-01-31 2015-08-06 Huf Hülsbeck & Fürst Gmbh & Co. Kg Montagemodul
DE102014101190A1 (de) 2014-01-31 2015-08-06 Huf Hülsbeck & Fürst Gmbh & Co. Kg Montagemodul
DE102014101199A1 (de) * 2014-01-31 2015-08-06 Huf Hülsbeck & Fürst Gmbh & Co. Kg Montagemodul für ein Kraftfahrzeug mit einem optischen Sensorsystem und einer Notbetätigung
DE102014101192A1 (de) 2014-01-31 2015-08-06 Huf Hülsbeck & Fürst Gmbh & Co. Kg Verfahren zum Bereitstellen eines Arbeitssignals
DE102015002282A1 (de) 2014-05-09 2015-11-12 Elmos Semiconductor Aktiengesellschaft Vorrichtung und Verfahren zum insbesondere dreidimensionalen optischen Scannen und Vermessen von Objekten und zur Objekterkennung mittels Lichtlaufzeitmessung
US9769769B2 (en) 2014-06-30 2017-09-19 Microsoft Technology Licensing, Llc Detecting proximity using antenna feedback
US9785174B2 (en) 2014-10-03 2017-10-10 Microsoft Technology Licensing, Llc Predictive transmission power control for back-off
US9871545B2 (en) 2014-12-05 2018-01-16 Microsoft Technology Licensing, Llc Selective specific absorption rate adjustment
CN107210310B (zh) 2015-01-06 2019-02-15 胡夫·许尔斯贝克和福斯特有限及两合公司 用以照射用于车辆的传感器设备的光学设备
US10013038B2 (en) 2016-01-05 2018-07-03 Microsoft Technology Licensing, Llc Dynamic antenna power control for multi-context device
WO2017148772A1 (de) 2016-03-01 2017-09-08 Elmos Semiconductur Aktiengesellschaft Vorrichtung zur wandlung einer zeitlichen verzögerung eines zwischen einem sender und einem empfänger übertragenen signals
DE102016108497B3 (de) 2016-03-01 2017-05-18 Elmos Semiconductor Aktiengesellschaft Vorrichtung zur Zeit-zu-Digital-Wandlung mit geregelter zeitlicher Wavelet-Kompression mittels eines Sende-Wavelets mit geregelter Verzögerung und eines Analyse-Wavelets
EP3270183B1 (de) 2016-07-15 2019-03-27 ELMOS Semiconductor Aktiengesellschaft Vorrichtung zur umgebungslichtkompensation für einen nutz- und umgebungslicht ausgesetzten optischen sensor
US10461406B2 (en) 2017-01-23 2019-10-29 Microsoft Technology Licensing, Llc Loop antenna with integrated proximity sensing
US10337886B2 (en) 2017-01-23 2019-07-02 Microsoft Technology Licensing, Llc Active proximity sensor with adaptive electric field control
DE102017106077B3 (de) 2017-03-21 2018-07-26 Elmos Semiconductor Aktiengesellschaft Vorrichtung zur Signalverzögerung unter Benutzung eines Quarz-Oszillators und deren Anwendung in einer TOF-Kamera
DE102017106073B3 (de) 2017-03-21 2018-03-29 Elmos Semiconductor Aktiengesellschaft Verfahren zur Erfassung der Verzögerung zwischen einem Spannungspuls an einem Leuchtmittel und einem Shutter-an-Signal zur Verbesserung von Verfahren und Vorrichtungen zur Messung der Lichtlaufzeit
DE102017106078B3 (de) 2017-03-21 2018-07-26 Elmos Semiconductor Aktiengesellschaft Vorrichtung zur Signalverzögerung unter Benutzung eines MEMS Oszillators und deren Anwendung in einer TOF-Kamera
DE102017106071B3 (de) 2017-03-21 2018-03-29 Elmos Semiconductor Aktiengesellschaft Verfahren zur Erfassung der Verzögerung zwischen einem Lichtpuls und einem Shutter-an-Signal zur Verbesserung von Verfahren und Vorrichtungen zur Messung der Lichtlaufzeit
DE102017106076B3 (de) 2017-03-21 2018-07-26 Elmos Semiconductor Aktiengesellschaft Vorrichtung zur Signalverzögerung unter Benutzung eines Referenzoszillators und deren Anwendung in einer TOF-Kamera
DE102017106072B3 (de) 2017-03-21 2018-03-29 Elmos Semiconductor Aktiengesellschaft Verfahren zur Erfassung der Verzögerung zwischen einem Strompuls an einem Leuchtmittel und einem Shutter-an-Signal zur Verbesserung von Verfahren und Vorrichtungen zur Messung der Lichtlaufzeit
US10224974B2 (en) 2017-03-31 2019-03-05 Microsoft Technology Licensing, Llc Proximity-independent SAR mitigation
DE102018120245B4 (de) 2017-09-12 2024-02-15 Elmos Semiconductor Se H-Brücke zum Erzeugen kurzer Lichtpulse mittels eines LED-Leuchtmittels und hoher gepulster Betriebsspannungen und Verfahren zu deren Betrieb
DE102017121119B4 (de) 2017-09-12 2020-08-20 Elmos Semiconductor Aktiengesellschaft Kfz-TOF-Kamera mit einem LED-Scheinwerfer als Lichtquelle
DE102017121109B3 (de) 2017-09-12 2018-12-27 Elmos Semiconductor Aktiengesellschaft LED-Scheinwerfer für Datenübertragungszwecke und Verfahren zu dessen Nutzung
DE102017121112B3 (de) 2017-09-12 2018-12-27 Elmos Semiconductor Aktiengesellschaft Lichtpulsfähiger Scheinwerfer
DE102018120283A1 (de) 2017-09-12 2019-03-14 Elmos Semiconductor Aktiengesellschaft Verfahren zum Betreiben eines datenübertragungsfähigen LED-Scheinwerfers mit hohen gepulsten LED-Betriebsspannungen
DE102018120271B4 (de) 2017-09-12 2023-09-07 Elmos Semiconductor Se LED-H-Brückenbetriebsverfahren mit hohen gepulsten Betriebsspannungen
DE102017121116A1 (de) 2017-09-12 2019-03-14 Elmos Semiconductor Aktiengesellschaft H-Brücke und Verfahren zu deren Betrieb in einem LED-Scheinwerfer
DE102017121113B3 (de) 2017-09-12 2018-12-27 Elmos Semiconductor Aktiengesellschaft LED-Scheinwerfer für Mess- und Datenübertragungszwecke und Verfahren zu dessen Nutzung
DE102017121114B4 (de) 2017-09-12 2020-08-06 Elmos Semiconductor Aktiengesellschaft Verfahren zum Betrieb einer H-Brücke zum Erzeugen kurzer Lichtpulse mittels eines LED-Leuchtmittels
DE102017121115A1 (de) 2017-09-12 2019-03-14 Elmos Semiconductor Aktiengesellschaft Lichtpulsfähiger Beleuchtungsscheinwerfer
DE102017121110B3 (de) 2017-09-12 2018-12-27 Elmos Semiconductor Aktiengesellschaft Scheinwerfer für Beleuchtungszwecke und Verfahren zum Erzeugen kurzer Lichtpulse mittels desselben und Anwendungen zum Einsatz desselben
DE102017123017A1 (de) 2017-10-04 2019-04-04 Huf Hülsbeck & Fürst Gmbh & Co. Kg Montagemodul mit einem Anzeigeelement
WO2019200513A1 (zh) * 2018-04-16 2019-10-24 深圳市汇顶科技股份有限公司 影像传感系统及电子装置
DE102021100931A1 (de) 2020-03-10 2021-09-16 Elmos Semiconductor Se Verfahren zur Herstellung eines Pixels für ein bildgebendes Lichtlaufzeitmesssystem mit einer verbesserten Fertigungsausbeute

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US5705836A (en) * 1995-05-22 1998-01-06 Dalsa, Inc. Efficient charge transfer structure in large pitch charge coupled device
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Also Published As

Publication number Publication date
DE102009020218B3 (de) 2011-01-13
US8748794B2 (en) 2014-06-10
US20100308213A1 (en) 2010-12-09
US20130092824A1 (en) 2013-04-18
US8324549B2 (en) 2012-12-04

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