DE2718452A1 - Verfahren zum herstellen von halbleiterelementen - Google Patents

Verfahren zum herstellen von halbleiterelementen

Info

Publication number
DE2718452A1
DE2718452A1 DE19772718452 DE2718452A DE2718452A1 DE 2718452 A1 DE2718452 A1 DE 2718452A1 DE 19772718452 DE19772718452 DE 19772718452 DE 2718452 A DE2718452 A DE 2718452A DE 2718452 A1 DE2718452 A1 DE 2718452A1
Authority
DE
Germany
Prior art keywords
irradiation
temperature
energy
electron
irradiated
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19772718452
Other languages
German (de)
English (en)
Inventor
Yen Sheng Edmund Sun
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE2718452A1 publication Critical patent/DE2718452A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S148/00—Metal treatment
    • Y10S148/046—Electron beam treatment of devices

Landscapes

  • Thyristors (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
DE19772718452 1976-05-03 1977-04-26 Verfahren zum herstellen von halbleiterelementen Withdrawn DE2718452A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/682,581 US4043836A (en) 1976-05-03 1976-05-03 Method of manufacturing semiconductor devices

Publications (1)

Publication Number Publication Date
DE2718452A1 true DE2718452A1 (de) 1977-11-24

Family

ID=24740303

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19772718452 Withdrawn DE2718452A1 (de) 1976-05-03 1977-04-26 Verfahren zum herstellen von halbleiterelementen

Country Status (6)

Country Link
US (1) US4043836A (https=)
JP (1) JPS52141583A (https=)
DE (1) DE2718452A1 (https=)
FR (1) FR2350693A1 (https=)
GB (1) GB1568154A (https=)
SE (1) SE424484B (https=)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4076555A (en) * 1976-05-17 1978-02-28 Westinghouse Electric Corporation Irradiation for rapid turn-off reverse blocking diode thyristor
JPS5395581A (en) * 1977-02-02 1978-08-21 Hitachi Ltd Manufacture for semiconductor device
US4137099A (en) * 1977-07-11 1979-01-30 General Electric Company Method of controlling leakage currents and reverse recovery time of rectifiers by hot electron irradiation and post-annealing treatments
JPS54118771A (en) * 1978-03-08 1979-09-14 Hitachi Ltd Manufacture of semiconductor device
US4230791A (en) * 1979-04-02 1980-10-28 General Electric Company Control of valley current in a unijunction transistor by electron irradiation
US4395293A (en) * 1981-03-23 1983-07-26 Hughes Aircraft Company Accelerated annealing of gallium arsenide solar cells
GB8418063D0 (en) * 1984-07-16 1984-08-22 Atomic Energy Authority Uk Temperature control in vacuum
US5219773A (en) * 1990-06-26 1993-06-15 Massachusetts Institute Of Technology Method of making reoxidized nitrided oxide MOSFETs
JPH0927613A (ja) * 1995-07-10 1997-01-28 Rohm Co Ltd 半導体装置の製法
JP4858527B2 (ja) * 2008-11-10 2012-01-18 トヨタ自動車株式会社 半導体装置の製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3507709A (en) * 1967-09-15 1970-04-21 Hughes Aircraft Co Method of irradiating dielectriccoated semiconductor bodies with low energy electrons
DE2035703C3 (de) * 1970-07-18 1974-07-11 Siemens Ag, 1000 Berlin Und 8000 Muenchen Verfahren zur Verbesserung der Strahlungsresistenz von Siliziumtransistoren mit Siliziumoxiddeckschicht
NL7307460A (https=) * 1970-07-18 1974-01-21
US3881964A (en) * 1973-03-05 1975-05-06 Westinghouse Electric Corp Annealing to control gate sensitivity of gated semiconductor devices
US3877997A (en) * 1973-03-20 1975-04-15 Westinghouse Electric Corp Selective irradiation for fast switching thyristor with low forward voltage drop
CA1006987A (en) * 1973-05-04 1977-03-15 Michael W. Cresswell Dynamic isolation of high density conductivity modulation states in integrated circuits
US3941625A (en) * 1973-10-11 1976-03-02 General Electric Company Glass passivated gold diffused SCR pellet and method for making
US3943013A (en) * 1973-10-11 1976-03-09 General Electric Company Triac with gold diffused boundary
FR2257998B1 (https=) * 1974-01-10 1976-11-26 Commissariat Energie Atomique

Also Published As

Publication number Publication date
SE424484B (sv) 1982-07-19
JPS5718714B2 (https=) 1982-04-17
FR2350693A1 (fr) 1977-12-02
US4043836A (en) 1977-08-23
JPS52141583A (en) 1977-11-25
FR2350693B1 (https=) 1982-10-22
GB1568154A (en) 1980-05-29
SE7705140L (sv) 1977-11-04

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Legal Events

Date Code Title Description
OD Request for examination
8120 Willingness to grant licences paragraph 23
8130 Withdrawal