DE2656420A1 - Transistor mit innerer gegenkopplung - Google Patents

Transistor mit innerer gegenkopplung

Info

Publication number
DE2656420A1
DE2656420A1 DE19762656420 DE2656420A DE2656420A1 DE 2656420 A1 DE2656420 A1 DE 2656420A1 DE 19762656420 DE19762656420 DE 19762656420 DE 2656420 A DE2656420 A DE 2656420A DE 2656420 A1 DE2656420 A1 DE 2656420A1
Authority
DE
Germany
Prior art keywords
zone
transistor
collector
conductivity type
base
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19762656420
Other languages
German (de)
English (en)
Inventor
Gerhard Krause
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Priority to DE19762656420 priority Critical patent/DE2656420A1/de
Priority to FR7737038A priority patent/FR2373880A1/fr
Priority to GB51556/77A priority patent/GB1563767A/en
Priority to JP15039477A priority patent/JPS5375776A/ja
Publication of DE2656420A1 publication Critical patent/DE2656420A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Integrated Circuits (AREA)
DE19762656420 1976-12-13 1976-12-13 Transistor mit innerer gegenkopplung Ceased DE2656420A1 (de)

Priority Applications (4)

Application Number Priority Date Filing Date Title
DE19762656420 DE2656420A1 (de) 1976-12-13 1976-12-13 Transistor mit innerer gegenkopplung
FR7737038A FR2373880A1 (fr) 1976-12-13 1977-12-08 Transistor a contre-reaction interne
GB51556/77A GB1563767A (en) 1976-12-13 1977-12-12 Transistors
JP15039477A JPS5375776A (en) 1976-12-13 1977-12-13 Internal negative feedback transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762656420 DE2656420A1 (de) 1976-12-13 1976-12-13 Transistor mit innerer gegenkopplung

Publications (1)

Publication Number Publication Date
DE2656420A1 true DE2656420A1 (de) 1978-06-15

Family

ID=5995400

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762656420 Ceased DE2656420A1 (de) 1976-12-13 1976-12-13 Transistor mit innerer gegenkopplung

Country Status (4)

Country Link
JP (1) JPS5375776A (enrdf_load_stackoverflow)
DE (1) DE2656420A1 (enrdf_load_stackoverflow)
FR (1) FR2373880A1 (enrdf_load_stackoverflow)
GB (1) GB1563767A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649409A (en) * 1982-11-12 1987-03-10 Tokyo Shibaura Denki Kabushiki Kaisha Photoelectric transducer element

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL261720A (enrdf_load_stackoverflow) * 1960-03-04
US3623925A (en) * 1969-01-10 1971-11-30 Fairchild Camera Instr Co Schottky-barrier diode process and devices
US3676229A (en) * 1971-01-26 1972-07-11 Rca Corp Method for making transistors including base sheet resistivity determining step
GB1319037A (en) * 1971-03-26 1973-05-31 Ferranti Ltd Transistors
US3858234A (en) * 1973-01-08 1974-12-31 Motorola Inc Transistor having improved safe operating area
US3999217A (en) * 1975-02-26 1976-12-21 Rca Corporation Semiconductor device having parallel path for current flow
US3997910A (en) * 1975-02-26 1976-12-14 Rca Corporation Semiconductor device with solder conductive paths

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
"IBM Technical Disclosure Bulletin", Bd. 15, 4.12, Mai 1973, S. 3798 *
"Solid-State Electronics" Bd. 11, 1968, S. 613-619 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4649409A (en) * 1982-11-12 1987-03-10 Tokyo Shibaura Denki Kabushiki Kaisha Photoelectric transducer element

Also Published As

Publication number Publication date
JPS5375776A (en) 1978-07-05
FR2373880B1 (enrdf_load_stackoverflow) 1980-10-03
GB1563767A (en) 1980-04-02
FR2373880A1 (fr) 1978-07-07

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Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8131 Rejection