FR2373880A1 - Transistor a contre-reaction interne - Google Patents

Transistor a contre-reaction interne

Info

Publication number
FR2373880A1
FR2373880A1 FR7737038A FR7737038A FR2373880A1 FR 2373880 A1 FR2373880 A1 FR 2373880A1 FR 7737038 A FR7737038 A FR 7737038A FR 7737038 A FR7737038 A FR 7737038A FR 2373880 A1 FR2373880 A1 FR 2373880A1
Authority
FR
France
Prior art keywords
internal feedback
area
feedback transistor
collector
conductive path
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7737038A
Other languages
English (en)
French (fr)
Other versions
FR2373880B1 (enrdf_load_stackoverflow
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of FR2373880A1 publication Critical patent/FR2373880A1/fr
Application granted granted Critical
Publication of FR2373880B1 publication Critical patent/FR2373880B1/fr
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137—Collector regions of BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231—Emitter or collector electrodes for bipolar transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Integrated Circuits (AREA)
FR7737038A 1976-12-13 1977-12-08 Transistor a contre-reaction interne Granted FR2373880A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762656420 DE2656420A1 (de) 1976-12-13 1976-12-13 Transistor mit innerer gegenkopplung

Publications (2)

Publication Number Publication Date
FR2373880A1 true FR2373880A1 (fr) 1978-07-07
FR2373880B1 FR2373880B1 (enrdf_load_stackoverflow) 1980-10-03

Family

ID=5995400

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7737038A Granted FR2373880A1 (fr) 1976-12-13 1977-12-08 Transistor a contre-reaction interne

Country Status (4)

Country Link
JP (1) JPS5375776A (enrdf_load_stackoverflow)
DE (1) DE2656420A1 (enrdf_load_stackoverflow)
FR (1) FR2373880A1 (enrdf_load_stackoverflow)
GB (1) GB1563767A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988875A (ja) * 1982-11-12 1984-05-22 Toshiba Corp 光電変換素子

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1108333B (de) * 1960-03-04 1961-06-08 Siemens Ag Transistor zum Schalten, insbesondere fuer hoehere Schaltfrequenzen, mit auf gegenueberliegenden Oberflaechen des Halbleiterkoerpers anlegierten Kollektor- und Emitterelektroden
FR2028085A7 (enrdf_load_stackoverflow) * 1969-01-10 1970-10-09 Fairchild Camera Instr Co
US3676229A (en) * 1971-01-26 1972-07-11 Rca Corp Method for making transistors including base sheet resistivity determining step
GB1319037A (en) * 1971-03-26 1973-05-31 Ferranti Ltd Transistors
FR2213588A1 (enrdf_load_stackoverflow) * 1973-01-08 1974-08-02 Motorola Inc
FR2302588A1 (fr) * 1975-02-26 1976-09-24 Rca Corp Dispositif semi-conducteur
FR2302591A1 (fr) * 1975-02-26 1976-09-24 Rca Corp Dispositif semi-conducteur

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1108333B (de) * 1960-03-04 1961-06-08 Siemens Ag Transistor zum Schalten, insbesondere fuer hoehere Schaltfrequenzen, mit auf gegenueberliegenden Oberflaechen des Halbleiterkoerpers anlegierten Kollektor- und Emitterelektroden
FR2028085A7 (enrdf_load_stackoverflow) * 1969-01-10 1970-10-09 Fairchild Camera Instr Co
US3676229A (en) * 1971-01-26 1972-07-11 Rca Corp Method for making transistors including base sheet resistivity determining step
GB1319037A (en) * 1971-03-26 1973-05-31 Ferranti Ltd Transistors
FR2213588A1 (enrdf_load_stackoverflow) * 1973-01-08 1974-08-02 Motorola Inc
FR2302588A1 (fr) * 1975-02-26 1976-09-24 Rca Corp Dispositif semi-conducteur
FR2302591A1 (fr) * 1975-02-26 1976-09-24 Rca Corp Dispositif semi-conducteur

Also Published As

Publication number Publication date
DE2656420A1 (de) 1978-06-15
JPS5375776A (en) 1978-07-05
FR2373880B1 (enrdf_load_stackoverflow) 1980-10-03
GB1563767A (en) 1980-04-02

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Legal Events

Date Code Title Description
ST Notification of lapse