GB1563767A - Transistors - Google Patents
Transistors Download PDFInfo
- Publication number
- GB1563767A GB1563767A GB51556/77A GB5155677A GB1563767A GB 1563767 A GB1563767 A GB 1563767A GB 51556/77 A GB51556/77 A GB 51556/77A GB 5155677 A GB5155677 A GB 5155677A GB 1563767 A GB1563767 A GB 1563767A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transistor
- zone
- negative feedback
- collector
- base
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000003321 amplification Effects 0.000 claims description 16
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 16
- 239000004020 conductor Substances 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 5
- 230000005540 biological transmission Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- 230000010354 integration Effects 0.000 description 3
- 239000002184 metal Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
- H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
- H10D62/137—Collector regions of BJTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/23—Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
- H10D64/231—Emitter or collector electrodes for bipolar transistors
Landscapes
- Bipolar Transistors (AREA)
- Light Receiving Elements (AREA)
- Bipolar Integrated Circuits (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19762656420 DE2656420A1 (de) | 1976-12-13 | 1976-12-13 | Transistor mit innerer gegenkopplung |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1563767A true GB1563767A (en) | 1980-04-02 |
Family
ID=5995400
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB51556/77A Expired GB1563767A (en) | 1976-12-13 | 1977-12-12 | Transistors |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS5375776A (enrdf_load_stackoverflow) |
| DE (1) | DE2656420A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2373880A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1563767A (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5988875A (ja) * | 1982-11-12 | 1984-05-22 | Toshiba Corp | 光電変換素子 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL261720A (enrdf_load_stackoverflow) * | 1960-03-04 | |||
| US3623925A (en) * | 1969-01-10 | 1971-11-30 | Fairchild Camera Instr Co | Schottky-barrier diode process and devices |
| US3676229A (en) * | 1971-01-26 | 1972-07-11 | Rca Corp | Method for making transistors including base sheet resistivity determining step |
| GB1319037A (en) * | 1971-03-26 | 1973-05-31 | Ferranti Ltd | Transistors |
| US3858234A (en) * | 1973-01-08 | 1974-12-31 | Motorola Inc | Transistor having improved safe operating area |
| US3999217A (en) * | 1975-02-26 | 1976-12-21 | Rca Corporation | Semiconductor device having parallel path for current flow |
| US3997910A (en) * | 1975-02-26 | 1976-12-14 | Rca Corporation | Semiconductor device with solder conductive paths |
-
1976
- 1976-12-13 DE DE19762656420 patent/DE2656420A1/de not_active Ceased
-
1977
- 1977-12-08 FR FR7737038A patent/FR2373880A1/fr active Granted
- 1977-12-12 GB GB51556/77A patent/GB1563767A/en not_active Expired
- 1977-12-13 JP JP15039477A patent/JPS5375776A/ja active Pending
Also Published As
| Publication number | Publication date |
|---|---|
| DE2656420A1 (de) | 1978-06-15 |
| JPS5375776A (en) | 1978-07-05 |
| FR2373880B1 (enrdf_load_stackoverflow) | 1980-10-03 |
| FR2373880A1 (fr) | 1978-07-07 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US3339128A (en) | Insulated offset gate field effect transistor | |
| US3100276A (en) | Semiconductor solid circuits | |
| US4214252A (en) | Semiconductor device having a MOS-capacitor | |
| JPH10505714A (ja) | パワー半導体装置 | |
| US4053915A (en) | Temperature compensated constant current source device | |
| US3749985A (en) | High frequency insulated gate field effect transistor for wide frequency band operation | |
| US4306246A (en) | Method for trimming active semiconductor devices | |
| US4112455A (en) | Field-effect transistor with extended linear logarithmic transconductance | |
| US4423388A (en) | RF Amplifier circuit employing FET devices | |
| US5142256A (en) | Pin diode with field emission device switch | |
| JPH0514069A (ja) | 高出力電界効果トランジスタ増幅器 | |
| US3333168A (en) | Unipolar transistor having plurality of insulated gate-electrodes on same side | |
| US3320497A (en) | Variable capacitance diode packages | |
| US3384829A (en) | Semiconductor variable capacitance element | |
| US3434068A (en) | Integrated circuit amplifier utilizing field-effect transistors having parallel reverse connected diodes as bias circuits therefor | |
| GB1563767A (en) | Transistors | |
| US3805129A (en) | Field effect transistor having two gates for functioning at extremely high frequencies | |
| US4651178A (en) | Dual inverse zener diode with buried junctions | |
| US11183586B2 (en) | Cascode transistor device | |
| US3296508A (en) | Field-effect transistor with reduced capacitance between gate and channel | |
| US3210560A (en) | Semiconductor device | |
| JP2679781B2 (ja) | 半導体装置 | |
| KR100406319B1 (ko) | 전력증폭회로 | |
| EP0476174B1 (en) | Field effect attenuator devices having controlled electrical lengths | |
| US3486082A (en) | Semiconductor devices |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |