JPS5375776A - Internal negative feedback transistor - Google Patents

Internal negative feedback transistor

Info

Publication number
JPS5375776A
JPS5375776A JP15039477A JP15039477A JPS5375776A JP S5375776 A JPS5375776 A JP S5375776A JP 15039477 A JP15039477 A JP 15039477A JP 15039477 A JP15039477 A JP 15039477A JP S5375776 A JPS5375776 A JP S5375776A
Authority
JP
Japan
Prior art keywords
negative feedback
feedback transistor
internal negative
internal
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15039477A
Other languages
English (en)
Japanese (ja)
Inventor
Kurauze Geruharuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of JPS5375776A publication Critical patent/JPS5375776A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/137Collector regions of BJTs
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00Electrodes of devices having potential barriers
    • H10D64/20Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/23Electrodes carrying the current to be rectified, amplified, oscillated or switched, e.g. sources, drains, anodes or cathodes
    • H10D64/231Emitter or collector electrodes for bipolar transistors

Landscapes

  • Bipolar Transistors (AREA)
  • Light Receiving Elements (AREA)
  • Bipolar Integrated Circuits (AREA)
JP15039477A 1976-12-13 1977-12-13 Internal negative feedback transistor Pending JPS5375776A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19762656420 DE2656420A1 (de) 1976-12-13 1976-12-13 Transistor mit innerer gegenkopplung

Publications (1)

Publication Number Publication Date
JPS5375776A true JPS5375776A (en) 1978-07-05

Family

ID=5995400

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15039477A Pending JPS5375776A (en) 1976-12-13 1977-12-13 Internal negative feedback transistor

Country Status (4)

Country Link
JP (1) JPS5375776A (enrdf_load_stackoverflow)
DE (1) DE2656420A1 (enrdf_load_stackoverflow)
FR (1) FR2373880A1 (enrdf_load_stackoverflow)
GB (1) GB1563767A (enrdf_load_stackoverflow)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5988875A (ja) * 1982-11-12 1984-05-22 Toshiba Corp 光電変換素子

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL261720A (enrdf_load_stackoverflow) * 1960-03-04
US3623925A (en) * 1969-01-10 1971-11-30 Fairchild Camera Instr Co Schottky-barrier diode process and devices
US3676229A (en) * 1971-01-26 1972-07-11 Rca Corp Method for making transistors including base sheet resistivity determining step
GB1319037A (en) * 1971-03-26 1973-05-31 Ferranti Ltd Transistors
US3858234A (en) * 1973-01-08 1974-12-31 Motorola Inc Transistor having improved safe operating area
US3999217A (en) * 1975-02-26 1976-12-21 Rca Corporation Semiconductor device having parallel path for current flow
US3997910A (en) * 1975-02-26 1976-12-14 Rca Corporation Semiconductor device with solder conductive paths

Also Published As

Publication number Publication date
DE2656420A1 (de) 1978-06-15
FR2373880B1 (enrdf_load_stackoverflow) 1980-10-03
GB1563767A (en) 1980-04-02
FR2373880A1 (fr) 1978-07-07

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