GB695019A - Improvements in or relating to amplifiers employing semi-conductors - Google Patents

Improvements in or relating to amplifiers employing semi-conductors

Info

Publication number
GB695019A
GB695019A GB7017/50A GB701750A GB695019A GB 695019 A GB695019 A GB 695019A GB 7017/50 A GB7017/50 A GB 7017/50A GB 701750 A GB701750 A GB 701750A GB 695019 A GB695019 A GB 695019A
Authority
GB
United Kingdom
Prior art keywords
collector
emitter
semiconductor
electrode
electrodes
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7017/50A
Inventor
Eric Houghton Grover
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to NL90299D priority Critical patent/NL90299C/xx
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB7017/50A priority patent/GB695019A/en
Priority to GB7018/50A priority patent/GB682206A/en
Priority to US215227A priority patent/US2680159A/en
Priority to DEI3915A priority patent/DE968666C/en
Priority to FR1034265D priority patent/FR1034265A/en
Publication of GB695019A publication Critical patent/GB695019A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J19/00—Details of vacuum tubes of the types covered by group H01J21/00
    • H01J19/42—Mounting, supporting, spacing, or insulating of electrodes or of electrode assemblies
    • H01J19/44—Insulation between electrodes or supports within the vacuum space
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/04—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only
    • H03F3/14—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements with semiconductor devices only with amplifying devices having more than three electrodes or more than two PN junctions

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
  • Bipolar Transistors (AREA)
  • Bipolar Integrated Circuits (AREA)

Abstract

695,019. Semiconductor amplifiers. STANDARD TELEPHONES & CABLES, Ltd. March 16, 1951 [March 21, 1950], No. 7017/50. Class 40 (vi). An amplifier comprises a body of semiconductor 1 having two main portions connected by a portion 5 of reduced cross-sectional area, an emitter electrode 6 and a collector electrode 7, and two base electrodes 2 and 3 in contact respectively with the two main portions, and means for separately biasing the collector and emitter electrodes with respect to a corresponding one of the base electrodes such that the emitter and collector currents flow in the same part of the intermediate portion 5. Assuming the semiconductor to be of N-type conductivity, the emitter electrode 6 is biased positively with respect to base electrode 3 by battery 8, and collector 7 is biased negatively with respect to base electrode 2 by battery 12, so that the interaction between the current is increased in the intermediate portion 5. The two base electrodes may be connected for signal frequencies by condenser 16. Input signals are applied via transformer 9, and the output is taken from transformer 13. In a modification, the slot 4 between the main portions of the semiconductor is made wider, and the emitter and collector electrodes make contact with the inside or bottom surface of the slot 4. Reference is made to Specification 681,809, [Group XXXIX] and 682,206.
GB7017/50A 1950-03-21 1950-03-21 Improvements in or relating to amplifiers employing semi-conductors Expired GB695019A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
NL90299D NL90299C (en) 1950-03-21
GB7017/50A GB695019A (en) 1950-03-21 1950-03-21 Improvements in or relating to amplifiers employing semi-conductors
GB7018/50A GB682206A (en) 1950-03-21 1950-03-21 Improvements in or relating to amplifiers employing semi-conductors
US215227A US2680159A (en) 1950-03-21 1951-03-13 Amplifier employing semiconductors
DEI3915A DE968666C (en) 1950-03-21 1951-03-21 Semiconductor crystal amplifier
FR1034265D FR1034265A (en) 1950-03-21 1951-03-21 Amplifier devices using semiconductor materials

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7017/50A GB695019A (en) 1950-03-21 1950-03-21 Improvements in or relating to amplifiers employing semi-conductors

Publications (1)

Publication Number Publication Date
GB695019A true GB695019A (en) 1953-08-05

Family

ID=9825054

Family Applications (2)

Application Number Title Priority Date Filing Date
GB7018/50A Expired GB682206A (en) 1950-03-21 1950-03-21 Improvements in or relating to amplifiers employing semi-conductors
GB7017/50A Expired GB695019A (en) 1950-03-21 1950-03-21 Improvements in or relating to amplifiers employing semi-conductors

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB7018/50A Expired GB682206A (en) 1950-03-21 1950-03-21 Improvements in or relating to amplifiers employing semi-conductors

Country Status (5)

Country Link
US (1) US2680159A (en)
DE (1) DE968666C (en)
FR (1) FR1034265A (en)
GB (2) GB682206A (en)
NL (1) NL90299C (en)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB692337A (en) * 1951-10-24 1953-06-03 Standard Telephones Cables Ltd Improvements in or relating to electron beam tube arrangements
US2717342A (en) * 1952-10-28 1955-09-06 Bell Telephone Labor Inc Semiconductor translating devices
DE1039646B (en) * 1953-10-19 1958-09-25 Siemens Ag Method for producing a semiconductor arrangement with several transitions between zones of different conductivity types
US2829992A (en) * 1954-02-02 1958-04-08 Hughes Aircraft Co Fused junction semiconductor devices and method of making same
US2886748A (en) * 1954-03-15 1959-05-12 Rca Corp Semiconductor devices
US2805347A (en) * 1954-05-27 1957-09-03 Bell Telephone Labor Inc Semiconductive devices
US2846626A (en) * 1954-07-28 1958-08-05 Raytheon Mfg Co Junction transistors and methods of forming them
US2889417A (en) * 1956-01-26 1959-06-02 Honeywell Regulator Co Tetrode transistor bias circuit
CH335368A (en) * 1957-12-28 1958-12-31 Suisse Horlogerie Transistor

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2402661A (en) * 1941-03-01 1946-06-25 Bell Telephone Labor Inc Alternating current rectifier
US2600500A (en) * 1948-09-24 1952-06-17 Bell Telephone Labor Inc Semiconductor signal translating device with controlled carrier transit times
US2595497A (en) * 1949-01-22 1952-05-06 Rca Corp Semiconductor device for two-stage amplifiers
US2561411A (en) * 1950-03-08 1951-07-24 Bell Telephone Labor Inc Semiconductor signal translating device

Also Published As

Publication number Publication date
US2680159A (en) 1954-06-01
FR1034265A (en) 1953-07-21
DE968666C (en) 1958-03-20
NL90299C (en)
GB682206A (en) 1952-11-05

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