DE2649309C3 - Binärer getakteter Leseverstärker - Google Patents

Binärer getakteter Leseverstärker

Info

Publication number
DE2649309C3
DE2649309C3 DE2649309A DE2649309A DE2649309C3 DE 2649309 C3 DE2649309 C3 DE 2649309C3 DE 2649309 A DE2649309 A DE 2649309A DE 2649309 A DE2649309 A DE 2649309A DE 2649309 C3 DE2649309 C3 DE 2649309C3
Authority
DE
Germany
Prior art keywords
fets
sense amplifier
pair
electrodes
bus lines
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2649309A
Other languages
German (de)
English (en)
Other versions
DE2649309A1 (de
DE2649309B2 (de
Inventor
Robert Kenneth Mission Viejo Calif. Booher (V.St.A.)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
Rockwell International Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rockwell International Corp filed Critical Rockwell International Corp
Publication of DE2649309A1 publication Critical patent/DE2649309A1/de
Publication of DE2649309B2 publication Critical patent/DE2649309B2/de
Application granted granted Critical
Publication of DE2649309C3 publication Critical patent/DE2649309C3/de
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409Read-write [R-W] circuits 
    • G11C11/4091Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03KPULSE TECHNIQUE
    • H03K3/00Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356Bistable circuits
    • H03K3/356086Bistable circuits with additional means for controlling the main nodes
    • H03K3/356095Bistable circuits with additional means for controlling the main nodes with synchronous operation

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Read Only Memory (AREA)
DE2649309A 1976-02-09 1976-10-29 Binärer getakteter Leseverstärker Expired DE2649309C3 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/656,777 US4006458A (en) 1976-02-09 1976-02-09 Detector circuit

Publications (3)

Publication Number Publication Date
DE2649309A1 DE2649309A1 (de) 1977-08-18
DE2649309B2 DE2649309B2 (de) 1978-09-21
DE2649309C3 true DE2649309C3 (de) 1979-05-23

Family

ID=24634519

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2649309A Expired DE2649309C3 (de) 1976-02-09 1976-10-29 Binärer getakteter Leseverstärker

Country Status (5)

Country Link
US (1) US4006458A (US20030204162A1-20031030-M00001.png)
JP (1) JPS5295936A (US20030204162A1-20031030-M00001.png)
DE (1) DE2649309C3 (US20030204162A1-20031030-M00001.png)
GB (1) GB1522444A (US20030204162A1-20031030-M00001.png)
NL (1) NL7611837A (US20030204162A1-20031030-M00001.png)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4297598A (en) * 1979-04-05 1981-10-27 General Instrument Corporation I2 L Sensing circuit with increased sensitivity
DE3307953A1 (de) * 1983-03-07 1984-09-13 Siemens AG, 1000 Berlin und 8000 München Schaltungsanordnung zur auswahl von mindestens einer bit-leitung bei einem mos speicher
JPH0293145A (ja) * 1988-09-19 1990-04-03 Kitagawa Kogyo Kk 導電性の機構部品
US6160292A (en) 1997-04-23 2000-12-12 International Business Machines Corporation Circuit and methods to improve the operation of SOI devices
US5877521A (en) * 1998-01-08 1999-03-02 International Business Machines Corporation SOI active pixel cell design with grounded body contact
US6078058A (en) * 1998-03-05 2000-06-20 International Business Machine Corporation SOI floating body charge monitor circuit and method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1203526A (en) * 1968-04-30 1970-08-26 Int Standard Electric Corp Electronic multiselectors

Also Published As

Publication number Publication date
GB1522444A (en) 1978-08-23
US4006458A (en) 1977-02-01
JPS5295936A (en) 1977-08-12
NL7611837A (nl) 1977-08-11
DE2649309A1 (de) 1977-08-18
JPS5727553B2 (US20030204162A1-20031030-M00001.png) 1982-06-11
DE2649309B2 (de) 1978-09-21

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)