DE2637206A1 - Eine duennschicht insbesondere aus organischem material aufweisende anordnungen und verfahren zur herstellung derselben - Google Patents

Eine duennschicht insbesondere aus organischem material aufweisende anordnungen und verfahren zur herstellung derselben

Info

Publication number
DE2637206A1
DE2637206A1 DE19762637206 DE2637206A DE2637206A1 DE 2637206 A1 DE2637206 A1 DE 2637206A1 DE 19762637206 DE19762637206 DE 19762637206 DE 2637206 A DE2637206 A DE 2637206A DE 2637206 A1 DE2637206 A1 DE 2637206A1
Authority
DE
Germany
Prior art keywords
film
layer
arrangements
organic material
component according
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
DE19762637206
Other languages
German (de)
English (en)
Inventor
William Andrew Barlow
Geoffrey Owen
Garreth Gwyn Roberts
Cheshire Runcorn
Paul Stamford Vincett
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Imperial Chemical Industries Ltd
Original Assignee
Imperial Chemical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Imperial Chemical Industries Ltd filed Critical Imperial Chemical Industries Ltd
Publication of DE2637206A1 publication Critical patent/DE2637206A1/de
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H01L21/02285—Langmuir-Blodgett techniques
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/10—Apparatus or processes specially adapted to the manufacture of electroluminescent light sources
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/14—Light sources with substantially two-dimensional radiating surfaces characterised by the chemical or physical composition or the arrangement of the electroluminescent material, or by the simultaneous addition of the electroluminescent material in or onto the light source
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/701—Organic molecular electronic devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/451—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a metal-semiconductor-metal [m-s-m] structure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/701—Langmuir Blodgett films
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N60/00—Superconducting devices
    • H10N60/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/141—Organic polymers or oligomers comprising aliphatic or olefinic chains, e.g. poly N-vinylcarbazol, PVC or PTFE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/611—Charge transfer complexes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/631—Amine compounds having at least two aryl rest on at least one amine-nitrogen atom, e.g. triphenylamine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/649—Aromatic compounds comprising a hetero atom
    • H10K85/652—Cyanine dyes
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mathematical Physics (AREA)
  • Optics & Photonics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials Engineering (AREA)
  • Electromagnetism (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
DE19762637206 1975-08-18 1976-08-18 Eine duennschicht insbesondere aus organischem material aufweisende anordnungen und verfahren zur herstellung derselben Ceased DE2637206A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB34263/75A GB1572181A (en) 1975-08-18 1975-08-18 Device comprising a thin film of organic materila

Publications (1)

Publication Number Publication Date
DE2637206A1 true DE2637206A1 (de) 1977-03-10

Family

ID=10363472

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19762637206 Ceased DE2637206A1 (de) 1975-08-18 1976-08-18 Eine duennschicht insbesondere aus organischem material aufweisende anordnungen und verfahren zur herstellung derselben

Country Status (5)

Country Link
JP (1) JPS5235587A (fr)
DE (1) DE2637206A1 (fr)
FR (1) FR2321769A1 (fr)
GB (1) GB1572181A (fr)
NL (1) NL7609163A (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0239368A2 (fr) * 1986-03-25 1987-09-30 Kabushiki Kaisha Toshiba Transistor à effet de champ

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CA1085947A (fr) * 1977-08-02 1980-09-16 Ching W. Tang lements photovoltaiques organigues multicouches
EP0076060B1 (fr) * 1981-09-25 1986-12-17 Imperial Chemical Industries Plc Procédé pour appliquer des films minces sur des substrats
GB2117669A (en) * 1982-03-05 1983-10-19 Nat Res Dev Polymeric films
JPH0669006B2 (ja) * 1984-04-12 1994-08-31 松下電器産業株式会社 有機磁性薄膜およびその製造方法
JPS60223887A (ja) * 1984-04-20 1985-11-08 Canon Inc 発光表示素子
JPH0610734B2 (ja) * 1984-05-15 1994-02-09 キヤノン株式会社 表示媒体
US4773742A (en) * 1984-05-15 1988-09-27 Canon Kabushiki Kaisha Display method with fatly acid ester host molecule
JPS6137889A (ja) * 1984-07-31 1986-02-22 Canon Inc Ｅｌ素子
JPS6137858A (ja) * 1984-07-31 1986-02-22 Canon Inc 電界発光素子
JPS6137887A (ja) * 1984-07-31 1986-02-22 Canon Inc Ｅｌ素子
JPS6137883A (ja) * 1984-07-31 1986-02-22 Canon Inc 電界発光素子
JPS6137888A (ja) * 1984-07-31 1986-02-22 Canon Inc Ｅｌ素子
JPS61219185A (ja) * 1985-03-26 1986-09-29 Toshiba Corp 発光素子
US4819057A (en) * 1985-09-30 1989-04-04 Kabushiki Kaisha Toshiba Semiconductor light-emitting element
GB8527213D0 (en) * 1985-11-05 1985-12-11 British Petroleum Co Plc Separation process
DE3751502T2 (de) * 1986-03-11 1996-02-15 Kanegafuchi Chemical Ind Elektrische oder elektronische Anordnung mit einer dünnen Schicht aus Polyimid.
EP0239980A3 (fr) * 1986-04-01 1990-04-11 Kanegafuchi Kagaku Kogyo Kabushiki Kaisha Dispositif électrique-électronique incluant une couche mince en polyimide
US4939556A (en) * 1986-07-10 1990-07-03 Canon Kabushiki Kaisha Conductor device
US4714838A (en) * 1986-10-31 1987-12-22 Minnesota Mining And Manufacturing Company Second harmonic generation with N,N'-substituted barbituric acids
FI77679C (fi) * 1987-02-23 1989-04-10 K & V Licencing Oy Filmaggregat och foerfarande foer dess framstaellning.
JPH02501609A (ja) * 1987-10-09 1990-05-31 ヒューズ・エアクラフト・カンパニー ラングミュア・ブロジェット絶縁層を有するＧａＡｓ電気回路装置
JP2651237B2 (ja) * 1989-02-10 1997-09-10 出光興産株式会社 薄膜エレクトロルミネッセンス素子
US5200668A (en) * 1988-11-21 1993-04-06 Mitsui Toatsu Chemicals, Inc. Luminescence element
JP2651233B2 (ja) * 1989-01-20 1997-09-10 出光興産株式会社 薄膜有機ｅｌ素子
US5006915A (en) * 1989-02-14 1991-04-09 Ricoh Company, Ltd. Electric device and photoelectric conversion device comprising the same
JPH03105896A (ja) * 1989-09-20 1991-05-02 Hitachi Ltd Ｅｌ発光体
US7186380B2 (en) 2002-07-01 2007-03-06 Hewlett-Packard Development Company, L.P. Transistor and sensors made from molecular materials with electric dipoles

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2153441A1 (de) * 1971-10-27 1973-05-10 Licentia Gmbh Verfahren zum herstellen eines halbleiterbauelementes

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2153441A1 (de) * 1971-10-27 1973-05-10 Licentia Gmbh Verfahren zum herstellen eines halbleiterbauelementes

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
"Die Naturwissenschaften", 27. Jg. H. 18, 5. Mai 1939, S. 287-292 *

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0239368A2 (fr) * 1986-03-25 1987-09-30 Kabushiki Kaisha Toshiba Transistor à effet de champ
EP0239368A3 (en) * 1986-03-25 1990-02-07 Kabushiki Kaisha Toshiba Field-effect transistor
US5294820A (en) * 1986-03-25 1994-03-15 Kabushiki Kaisha Toshiba Field-effect transistor

Also Published As

Publication number Publication date
FR2321769B1 (fr) 1982-10-29
GB1572181A (en) 1980-07-23
JPS5235587A (en) 1977-03-18
NL7609163A (nl) 1977-02-22
FR2321769A1 (fr) 1977-03-18

Similar Documents

Publication Publication Date Title
DE2637206A1 (de) Eine duennschicht insbesondere aus organischem material aufweisende anordnungen und verfahren zur herstellung derselben
DE3721799C2 (de) Integrierte Redox-Bauelementschaltung und Verfahren zum Herstellen
DE69202554T2 (de) Tunneltransistor und dessen Herstellungsverfahren.
DE102012220731A1 (de) Verringern des Kontaktwiderstands für Feldeffekttransistoreinheiten
DE69027359T2 (de) Elektronische Vorrichtung
DE69024394T2 (de) Einen molekularen Heteroübergang aufweisendes optisches Element
EP3243224A1 (fr) Composant électronique
DE112004000423T5 (de) Aufschleuder-Polymere für organische Speicherelemente
DE3936279C2 (fr)
DE3751098T2 (de) Feldeffekttransistor.
DE3880019T2 (de) Oberflächenabschluss eines Verbindungshalbleiters.
EP1825516A2 (fr) Porte constituee de transistors a effet de champ organiques
DE19937262A1 (de) Anordnung mit Transistor-Funktion
DE102008056391A1 (de) Organisches elektronisches Bauelement und Verfahren zu dessen Herstellung
DE10228772A1 (de) Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren mit Palladiumkontakten durch Verwendung von Nitrilen und Isonitrilen
DE112014001248T5 (de) Organische halbleitende Mischung
DE3600564C2 (fr)
DE3686753T2 (de) Lichtemittierendes halbleiterelement.
DE69112288T2 (de) Hochgeschwindigkeitsoptohalbleitervorrichtung mit mehrfachen Quantentöpfen.
DE3222848C2 (fr)
DE3686047T2 (de) Monolithische halbleiterstruktur bestehend aus einem laser und einem feldeffekttransistor und deren herstellungsverfahren.
DE10234997C1 (de) Verringerung des Kontaktwiderstandes in organischen Feldeffekttransistoren mit Palladiumkontakten durch Verwendung von Phosphinen und metallhaltigen Phosphinen
DE2637099C2 (de) Verfahren zur Herstellung eines Films oder einer Schicht aus organischem Material mit einem hohen Grad molekularer Orientierung auf einem Substrat sowie dessen Verwendung
DE2228931C2 (de) Integrierte Halbleiteranordnung mit mindestens einem materialverschiedenen Halbleiterübergang und Verfahren zum Betrieb
DE3722941C2 (fr)

Legal Events

Date Code Title Description
8110 Request for examination paragraph 44
8131 Rejection