DE2628793C2 - - Google Patents

Info

Publication number
DE2628793C2
DE2628793C2 DE2628793A DE2628793A DE2628793C2 DE 2628793 C2 DE2628793 C2 DE 2628793C2 DE 2628793 A DE2628793 A DE 2628793A DE 2628793 A DE2628793 A DE 2628793A DE 2628793 C2 DE2628793 C2 DE 2628793C2
Authority
DE
Germany
Prior art keywords
zone
control electrode
junction
thyristor
zones
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2628793A
Other languages
German (de)
English (en)
Other versions
DE2628793A1 (de
Inventor
Patrick De Dipl.-Ing. Siggenthal Ch Bruyne
Roland Dr. Umiken Ch Sittig
Wolfgang Dr. Klingnau Ch Zimmermann
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BBC Brown Boveri AG Switzerland
Original Assignee
BBC Brown Boveri AG Switzerland
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BBC Brown Boveri AG Switzerland filed Critical BBC Brown Boveri AG Switzerland
Publication of DE2628793A1 publication Critical patent/DE2628793A1/de
Application granted granted Critical
Publication of DE2628793C2 publication Critical patent/DE2628793C2/de
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00—Thyristors
    • H10D18/211—Thyristors having built-in localised breakdown or breakover regions, e.g. self-protected against destructive spontaneous firing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thyristors (AREA)
DE19762628793 1976-06-02 1976-06-26 Thyristor Granted DE2628793A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CH692976A CH594984A5 (enrdf_load_html_response) 1976-06-02 1976-06-02

Publications (2)

Publication Number Publication Date
DE2628793A1 DE2628793A1 (de) 1977-12-15
DE2628793C2 true DE2628793C2 (enrdf_load_html_response) 1988-06-16

Family

ID=4317256

Family Applications (2)

Application Number Title Priority Date Filing Date
DE2661096A Expired DE2661096C2 (enrdf_load_html_response) 1976-06-02 1976-06-26
DE19762628793 Granted DE2628793A1 (de) 1976-06-02 1976-06-26 Thyristor

Family Applications Before (1)

Application Number Title Priority Date Filing Date
DE2661096A Expired DE2661096C2 (enrdf_load_html_response) 1976-06-02 1976-06-26

Country Status (2)

Country Link
CH (1) CH594984A5 (enrdf_load_html_response)
DE (2) DE2661096C2 (enrdf_load_html_response)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CH622127A5 (enrdf_load_html_response) * 1977-12-21 1981-03-13 Bbc Brown Boveri & Cie
DE2853292A1 (de) * 1978-11-24 1980-06-12 Bbc Brown Boveri & Cie Optisch aktivierbares halbleiterbauelement
JPS63260078A (ja) * 1987-04-17 1988-10-27 Hitachi Ltd 過電圧自己保護型サイリスタ
JPH01136369A (ja) * 1987-11-21 1989-05-29 Toshiba Corp 過電圧保護機能付半導体装置の製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
SE335178B (enrdf_load_html_response) * 1970-02-24 1971-05-17 Asea Ab
DE2140993C3 (de) * 1971-08-16 1979-06-21 Siemens Ag, 1000 Berlin Und 8000 Muenchen Thyristor

Also Published As

Publication number Publication date
DE2628793A1 (de) 1977-12-15
DE2661096C2 (enrdf_load_html_response) 1989-04-06
CH594984A5 (enrdf_load_html_response) 1978-01-31

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