DE2627003A1 - Verfahren zur herstellung einer fuer die projektionslithographie verwendbaren selbsttragenden maske - Google Patents
Verfahren zur herstellung einer fuer die projektionslithographie verwendbaren selbsttragenden maskeInfo
- Publication number
- DE2627003A1 DE2627003A1 DE19762627003 DE2627003A DE2627003A1 DE 2627003 A1 DE2627003 A1 DE 2627003A1 DE 19762627003 DE19762627003 DE 19762627003 DE 2627003 A DE2627003 A DE 2627003A DE 2627003 A1 DE2627003 A1 DE 2627003A1
- Authority
- DE
- Germany
- Prior art keywords
- mask
- radiation
- photoresist
- resist
- coating
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 14
- 238000001459 lithography Methods 0.000 title claims description 5
- 238000000034 method Methods 0.000 claims description 91
- 239000000758 substrate Substances 0.000 claims description 57
- 230000005855 radiation Effects 0.000 claims description 51
- 238000007747 plating Methods 0.000 claims description 48
- 238000000576 coating method Methods 0.000 claims description 43
- 239000011248 coating agent Substances 0.000 claims description 42
- 229920002120 photoresistant polymer Polymers 0.000 claims description 41
- 229910052751 metal Inorganic materials 0.000 claims description 37
- 239000002184 metal Substances 0.000 claims description 37
- 239000000463 material Substances 0.000 claims description 35
- 229910052737 gold Inorganic materials 0.000 claims description 26
- 238000010894 electron beam technology Methods 0.000 claims description 17
- 238000010304 firing Methods 0.000 claims description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 10
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 10
- 238000007740 vapor deposition Methods 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 229910052719 titanium Inorganic materials 0.000 claims description 7
- 238000003486 chemical etching Methods 0.000 claims description 6
- 229910052804 chromium Inorganic materials 0.000 claims description 5
- 230000001678 irradiating effect Effects 0.000 claims description 5
- 239000000696 magnetic material Substances 0.000 claims description 4
- 229910052697 platinum Inorganic materials 0.000 claims description 4
- 238000001816 cooling Methods 0.000 claims description 3
- 238000000151 deposition Methods 0.000 claims description 3
- 230000008021 deposition Effects 0.000 claims description 3
- 229910052735 hafnium Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims description 2
- 229910052763 palladium Inorganic materials 0.000 claims description 2
- 238000004544 sputter deposition Methods 0.000 claims description 2
- YTAHJIFKAKIKAV-XNMGPUDCSA-N [(1R)-3-morpholin-4-yl-1-phenylpropyl] N-[(3S)-2-oxo-5-phenyl-1,3-dihydro-1,4-benzodiazepin-3-yl]carbamate Chemical compound O=C1[C@H](N=C(C2=C(N1)C=CC=C2)C1=CC=CC=C1)NC(O[C@H](CCN1CCOCC1)C1=CC=CC=C1)=O YTAHJIFKAKIKAV-XNMGPUDCSA-N 0.000 claims 7
- GNFTZDOKVXKIBK-UHFFFAOYSA-N 3-(2-methoxyethoxy)benzohydrazide Chemical compound COCCOC1=CC=CC(C(=O)NN)=C1 GNFTZDOKVXKIBK-UHFFFAOYSA-N 0.000 claims 1
- 241000033695 Sige Species 0.000 claims 1
- 238000000889 atomisation Methods 0.000 claims 1
- 239000012530 fluid Substances 0.000 claims 1
- 239000000203 mixture Substances 0.000 claims 1
- 230000003014 reinforcing effect Effects 0.000 claims 1
- 238000000926 separation method Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 85
- 239000010931 gold Substances 0.000 description 30
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 20
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 16
- 238000005530 etching Methods 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 239000011521 glass Substances 0.000 description 10
- 239000000243 solution Substances 0.000 description 9
- 239000010949 copper Substances 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 6
- 229920000642 polymer Polymers 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- 239000000126 substance Substances 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 5
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 5
- 239000007921 spray Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000003795 chemical substances by application Substances 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000012047 saturated solution Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 229910052725 zinc Inorganic materials 0.000 description 3
- 239000011701 zinc Substances 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 238000005275 alloying Methods 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
- 239000010953 base metal Substances 0.000 description 2
- 238000005253 cladding Methods 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000001556 precipitation Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- CWYNVVGOOAEACU-UHFFFAOYSA-N Fe2+ Chemical compound [Fe+2] CWYNVVGOOAEACU-UHFFFAOYSA-N 0.000 description 1
- 101100400378 Mus musculus Marveld2 gene Proteins 0.000 description 1
- 229910001245 Sb alloy Inorganic materials 0.000 description 1
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052790 beryllium Inorganic materials 0.000 description 1
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000007334 copolymerization reaction Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000007772 electroless plating Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000003353 gold alloy Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- KDLHZDBZIXYQEI-UHFFFAOYSA-N palladium Substances [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 230000001012 protector Effects 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000001235 sensitizing effect Effects 0.000 description 1
- 239000010944 silver (metal) Substances 0.000 description 1
- 238000009987 spinning Methods 0.000 description 1
- 229910052717 sulfur Inorganic materials 0.000 description 1
- 239000011593 sulfur Substances 0.000 description 1
- 238000001356 surgical procedure Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 230000004304 visual acuity Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/143—Electron beam
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/153—Multiple image producing on single receiver
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
- Y10S430/167—X-ray
- Y10S430/168—X-ray exposure process
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/592,001 US4022927A (en) | 1975-06-30 | 1975-06-30 | Methods for forming thick self-supporting masks |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2627003A1 true DE2627003A1 (de) | 1977-01-27 |
Family
ID=24368859
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19762627003 Withdrawn DE2627003A1 (de) | 1975-06-30 | 1976-06-16 | Verfahren zur herstellung einer fuer die projektionslithographie verwendbaren selbsttragenden maske |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US4022927A (cg-RX-API-DMAC7.html) |
| JP (1) | JPS525271A (cg-RX-API-DMAC7.html) |
| CA (1) | CA1072389A (cg-RX-API-DMAC7.html) |
| DE (1) | DE2627003A1 (cg-RX-API-DMAC7.html) |
| FR (1) | FR2316635A1 (cg-RX-API-DMAC7.html) |
| GB (1) | GB1523535A (cg-RX-API-DMAC7.html) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3115116A1 (de) * | 1980-05-07 | 1982-02-04 | The Perkin-Elmer Corp., 06856 Norwalk, Conn. | Verfahren zur herstellung eines maskensubstrats zur anwendung bei der roentgenstrahlen-lithographie |
| WO1997043693A1 (de) * | 1996-05-13 | 1997-11-20 | Ims-Ionen Mikrofabrikations Systeme Gmbh | Verfahren zur herstellung einer strukturierten folie und verwendung derselben |
Families Citing this family (42)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4165395A (en) * | 1977-06-30 | 1979-08-21 | International Business Machines Corporation | Process for forming a high aspect ratio structure by successive exposures with electron beam and actinic radiation |
| US4349647A (en) * | 1978-07-19 | 1982-09-14 | Somar Manufacturing Co., Ltd. | Resist material for micro-fabrication |
| US4273858A (en) * | 1978-07-19 | 1981-06-16 | Somar Manufacturing Co., Ltd. | Resist material for micro-fabrication with unsaturated dicarboxylic moiety |
| US4284678A (en) * | 1978-09-18 | 1981-08-18 | Rockwell International Corporation | High resolution mask and method of fabrication thereof |
| US4293624A (en) * | 1979-06-26 | 1981-10-06 | The Perkin-Elmer Corporation | Method for making a mask useful in X-ray lithography |
| US4259369A (en) * | 1979-12-13 | 1981-03-31 | International Business Machines Corporation | Image hardening process |
| US4329410A (en) * | 1979-12-26 | 1982-05-11 | The Perkin-Elmer Corporation | Production of X-ray lithograph masks |
| US4293374A (en) * | 1980-03-10 | 1981-10-06 | International Business Machines Corporation | High aspect ratio, high resolution mask fabrication |
| US4352835A (en) * | 1981-07-01 | 1982-10-05 | Western Electric Co., Inc. | Masking portions of a substrate |
| US4411972A (en) * | 1981-12-30 | 1983-10-25 | International Business Machines Corporation | Integrated circuit photomask |
| US4453086A (en) * | 1981-12-31 | 1984-06-05 | International Business Machines Corporation | Electron beam system with reduced charge buildup |
| US4537813A (en) * | 1982-09-27 | 1985-08-27 | At&T Technologies, Inc. | Photomask encapsulation |
| US4576832A (en) * | 1982-12-30 | 1986-03-18 | International Business Machines Corporation | Self-aligning mask |
| DE3401963A1 (de) * | 1984-01-20 | 1985-07-25 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur herstellung von fotoresiststrukturen mit gestuften flanken |
| US4964146A (en) * | 1985-07-31 | 1990-10-16 | Hitachi, Ltd. | Pattern transistor mask and method of using the same |
| US5198377A (en) * | 1987-07-31 | 1993-03-30 | Kinya Kato | Method of manufacturing an active matrix cell |
| JP2725319B2 (ja) * | 1988-11-07 | 1998-03-11 | 富士通株式会社 | 荷電粒子線マスクの製造方法 |
| US5234781A (en) * | 1988-11-07 | 1993-08-10 | Fujitsu Limited | Mask for lithographic patterning and a method of manufacturing the same |
| US5426072A (en) * | 1993-01-21 | 1995-06-20 | Hughes Aircraft Company | Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate |
| US5572562A (en) * | 1993-04-30 | 1996-11-05 | Lsi Logic Corporation | Image mask substrate for X-ray semiconductor lithography |
| US5512395A (en) * | 1993-04-30 | 1996-04-30 | Lsi Logic Corporation | Image masks for semiconductor lithography |
| US5567551A (en) * | 1994-04-04 | 1996-10-22 | The United States Of America As Represented By The Secretary Of The Navy | Method for preparation of mask for ion beam lithography |
| GB2291207B (en) * | 1994-07-14 | 1998-03-25 | Hyundai Electronics Ind | Method for forming resist patterns |
| CN1057782C (zh) * | 1996-05-10 | 2000-10-25 | 沈玉全 | 一种侧链带偶氮官能团的聚酰亚胺的制备方法 |
| US5688719A (en) * | 1996-06-07 | 1997-11-18 | Taiwan Semiconductor Manufacturing Company Ltd | Method for plasma hardening of patterned photoresist layers |
| JP2904145B2 (ja) * | 1996-09-04 | 1999-06-14 | 日本電気株式会社 | 荷電ビーム描画装置用アパチャおよびその製造方法 |
| US5808892A (en) * | 1996-11-05 | 1998-09-15 | Taiwan Semiconductor Manufacturing Company Ltd. | Line edge and size definition in e-beam exposure |
| US5985363A (en) * | 1997-03-10 | 1999-11-16 | Vanguard International Semiconductor | Method of providing uniform photoresist coatings for tight control of image dimensions |
| US20040142252A1 (en) * | 1999-04-29 | 2004-07-22 | Skrobis Amy V. | Method of machining glass |
| US7156945B2 (en) * | 2002-04-24 | 2007-01-02 | Sipix Imaging, Inc. | Process for forming a patterned thin film structure for in-mold decoration |
| US8002948B2 (en) * | 2002-04-24 | 2011-08-23 | Sipix Imaging, Inc. | Process for forming a patterned thin film structure on a substrate |
| TWI268813B (en) * | 2002-04-24 | 2006-12-21 | Sipix Imaging Inc | Process for forming a patterned thin film conductive structure on a substrate |
| US7261920B2 (en) * | 2002-04-24 | 2007-08-28 | Sipix Imaging, Inc. | Process for forming a patterned thin film structure on a substrate |
| US7972472B2 (en) * | 2002-04-24 | 2011-07-05 | Sipix Imaging, Inc. | Process for forming a patterned thin film structure for in-mold decoration |
| JP2004207572A (ja) * | 2002-12-26 | 2004-07-22 | Toshiba Corp | ステンシルマスク及びマスク形成用基板並びにステンシルマスクの製造方法及びマスク形成用基板の製造方法 |
| US7317192B2 (en) * | 2003-06-02 | 2008-01-08 | Fox Chase Cancer Center | High energy polyenergetic ion selection systems, ion beam therapy systems, and ion beam treatment centers |
| JP4362350B2 (ja) * | 2003-11-12 | 2009-11-11 | ソニー株式会社 | ステンシルマスクの製造方法 |
| US7377032B2 (en) * | 2003-11-21 | 2008-05-27 | Mitsui Mining & Smelting Co., Ltd. | Process for producing a printed wiring board for mounting electronic components |
| US7713053B2 (en) * | 2005-06-10 | 2010-05-11 | Protochips, Inc. | Reusable template for creation of thin films; method of making and using template; and thin films produced from template |
| US7767126B2 (en) * | 2005-08-22 | 2010-08-03 | Sipix Imaging, Inc. | Embossing assembly and methods of preparation |
| US20140206185A1 (en) * | 2011-12-21 | 2014-07-24 | Ming Lei | Ball placement in a photo-patterned template for fine pitch interconnect |
| US12331394B2 (en) * | 2022-07-22 | 2025-06-17 | University Of North Texas | Method of forming porous inorganic films via polymer swelling infiltration |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE568197A (cg-RX-API-DMAC7.html) * | 1957-06-12 | |||
| US3458370A (en) * | 1966-01-26 | 1969-07-29 | Us Air Force | Fotoform-metallic evaporation mask making |
| US3712816A (en) * | 1967-11-13 | 1973-01-23 | Fairchild Camera Instr Co | Process for making hard surface transparent mask |
| US3561964A (en) * | 1968-07-19 | 1971-02-09 | Xerox Corp | Method for production of solid state storage panels |
| DE1904789A1 (de) * | 1969-01-31 | 1970-09-10 | Licentia Gmbh | Maske zur Abbildung von Mustern auf lichtempfindlichen Schichten |
| US3740280A (en) * | 1971-05-14 | 1973-06-19 | Rca Corp | Method of making semiconductor device |
| US3832176A (en) * | 1973-04-06 | 1974-08-27 | Eastman Kodak Co | Novel photoresist article and process for its use |
-
1975
- 1975-06-30 US US05/592,001 patent/US4022927A/en not_active Expired - Lifetime
-
1976
- 1976-06-09 GB GB23760/76A patent/GB1523535A/en not_active Expired
- 1976-06-11 JP JP6787176A patent/JPS525271A/ja active Granted
- 1976-06-14 FR FR7618498A patent/FR2316635A1/fr active Granted
- 1976-06-16 DE DE19762627003 patent/DE2627003A1/de not_active Withdrawn
- 1976-06-16 CA CA254,962A patent/CA1072389A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3115116A1 (de) * | 1980-05-07 | 1982-02-04 | The Perkin-Elmer Corp., 06856 Norwalk, Conn. | Verfahren zur herstellung eines maskensubstrats zur anwendung bei der roentgenstrahlen-lithographie |
| WO1997043693A1 (de) * | 1996-05-13 | 1997-11-20 | Ims-Ionen Mikrofabrikations Systeme Gmbh | Verfahren zur herstellung einer strukturierten folie und verwendung derselben |
Also Published As
| Publication number | Publication date |
|---|---|
| GB1523535A (en) | 1978-09-06 |
| CA1072389A (en) | 1980-02-26 |
| US4022927A (en) | 1977-05-10 |
| JPS5322428B2 (cg-RX-API-DMAC7.html) | 1978-07-08 |
| FR2316635B1 (cg-RX-API-DMAC7.html) | 1978-05-05 |
| FR2316635A1 (fr) | 1977-01-28 |
| JPS525271A (en) | 1977-01-14 |
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