FR2316635A1 - Methode permettant de former des masques epais - Google Patents

Methode permettant de former des masques epais

Info

Publication number
FR2316635A1
FR2316635A1 FR7618498A FR7618498A FR2316635A1 FR 2316635 A1 FR2316635 A1 FR 2316635A1 FR 7618498 A FR7618498 A FR 7618498A FR 7618498 A FR7618498 A FR 7618498A FR 2316635 A1 FR2316635 A1 FR 2316635A1
Authority
FR
France
Prior art keywords
forming thick
thick masks
masks
forming
thick
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7618498A
Other languages
English (en)
Other versions
FR2316635B1 (fr
Inventor
Aloysius T Pfeiffer
Lubomyr T Romankiw
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of FR2316635A1 publication Critical patent/FR2316635A1/fr
Application granted granted Critical
Publication of FR2316635B1 publication Critical patent/FR2316635B1/fr
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/20—Masks or mask blanks for imaging by charged particle beam [CPB] radiation, e.g. by electron beam; Preparation thereof
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/143—Electron beam
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/153—Multiple image producing on single receiver
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S430/00—Radiation imagery chemistry: process, composition, or product thereof
    • Y10S430/167—X-ray
    • Y10S430/168—X-ray exposure process

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
FR7618498A 1975-06-30 1976-06-14 Methode permettant de former des masques epais Granted FR2316635A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US05/592,001 US4022927A (en) 1975-06-30 1975-06-30 Methods for forming thick self-supporting masks

Publications (2)

Publication Number Publication Date
FR2316635A1 true FR2316635A1 (fr) 1977-01-28
FR2316635B1 FR2316635B1 (fr) 1978-05-05

Family

ID=24368859

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7618498A Granted FR2316635A1 (fr) 1975-06-30 1976-06-14 Methode permettant de former des masques epais

Country Status (6)

Country Link
US (1) US4022927A (fr)
JP (1) JPS525271A (fr)
CA (1) CA1072389A (fr)
DE (1) DE2627003A1 (fr)
FR (1) FR2316635A1 (fr)
GB (1) GB1523535A (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0044372A2 (fr) * 1980-03-10 1982-01-27 International Business Machines Corporation Fabrication et emploi d'un masque collimateur à haute résolution, ayant des trous beaucoup plus profonds que larges, pour réaliser une croissance épitaxiale sur des éléments semiconducteurs au moyen de faisceaux ioniques
EP0368089A2 (fr) * 1988-11-07 1990-05-16 Fujitsu Limited Procédé de fabrication d'un masque pour la texturation lithographique
US5234781A (en) * 1988-11-07 1993-08-10 Fujitsu Limited Mask for lithographic patterning and a method of manufacturing the same

Families Citing this family (41)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4165395A (en) * 1977-06-30 1979-08-21 International Business Machines Corporation Process for forming a high aspect ratio structure by successive exposures with electron beam and actinic radiation
US4273858A (en) * 1978-07-19 1981-06-16 Somar Manufacturing Co., Ltd. Resist material for micro-fabrication with unsaturated dicarboxylic moiety
US4349647A (en) * 1978-07-19 1982-09-14 Somar Manufacturing Co., Ltd. Resist material for micro-fabrication
US4284678A (en) * 1978-09-18 1981-08-18 Rockwell International Corporation High resolution mask and method of fabrication thereof
US4293624A (en) * 1979-06-26 1981-10-06 The Perkin-Elmer Corporation Method for making a mask useful in X-ray lithography
US4259369A (en) * 1979-12-13 1981-03-31 International Business Machines Corporation Image hardening process
US4329410A (en) * 1979-12-26 1982-05-11 The Perkin-Elmer Corporation Production of X-ray lithograph masks
DE3115116A1 (de) * 1980-05-07 1982-02-04 The Perkin-Elmer Corp., 06856 Norwalk, Conn. Verfahren zur herstellung eines maskensubstrats zur anwendung bei der roentgenstrahlen-lithographie
JPS5842172Y2 (ja) * 1981-05-22 1983-09-24 共和産業株式会社 サンバイザ−のア−ムプロテクタ
US4352835A (en) * 1981-07-01 1982-10-05 Western Electric Co., Inc. Masking portions of a substrate
US4411972A (en) * 1981-12-30 1983-10-25 International Business Machines Corporation Integrated circuit photomask
US4453086A (en) * 1981-12-31 1984-06-05 International Business Machines Corporation Electron beam system with reduced charge buildup
US4537813A (en) * 1982-09-27 1985-08-27 At&T Technologies, Inc. Photomask encapsulation
US4576832A (en) * 1982-12-30 1986-03-18 International Business Machines Corporation Self-aligning mask
DE3401963A1 (de) * 1984-01-20 1985-07-25 Siemens AG, 1000 Berlin und 8000 München Verfahren zur herstellung von fotoresiststrukturen mit gestuften flanken
US4964146A (en) * 1985-07-31 1990-10-16 Hitachi, Ltd. Pattern transistor mask and method of using the same
US5198377A (en) * 1987-07-31 1993-03-30 Kinya Kato Method of manufacturing an active matrix cell
US5426072A (en) * 1993-01-21 1995-06-20 Hughes Aircraft Company Process of manufacturing a three dimensional integrated circuit from stacked SOI wafers using a temporary silicon substrate
US5512395A (en) * 1993-04-30 1996-04-30 Lsi Logic Corporation Image masks for semiconductor lithography
US5572562A (en) * 1993-04-30 1996-11-05 Lsi Logic Corporation Image mask substrate for X-ray semiconductor lithography
US5567551A (en) * 1994-04-04 1996-10-22 The United States Of America As Represented By The Secretary Of The Navy Method for preparation of mask for ion beam lithography
GB2291207B (en) * 1994-07-14 1998-03-25 Hyundai Electronics Ind Method for forming resist patterns
CN1057782C (zh) * 1996-05-10 2000-10-25 沈玉全 一种侧链带偶氮官能团的聚酰亚胺的制备方法
WO1997043693A1 (fr) * 1996-05-13 1997-11-20 Ims-Ionen Mikrofabrikations Systeme Gmbh Procede de production d'un film structure et utilisation dudit film
US5688719A (en) * 1996-06-07 1997-11-18 Taiwan Semiconductor Manufacturing Company Ltd Method for plasma hardening of patterned photoresist layers
JP2904145B2 (ja) * 1996-09-04 1999-06-14 日本電気株式会社 荷電ビーム描画装置用アパチャおよびその製造方法
US5808892A (en) * 1996-11-05 1998-09-15 Taiwan Semiconductor Manufacturing Company Ltd. Line edge and size definition in e-beam exposure
US5985363A (en) * 1997-03-10 1999-11-16 Vanguard International Semiconductor Method of providing uniform photoresist coatings for tight control of image dimensions
US20040142252A1 (en) * 1999-04-29 2004-07-22 Skrobis Amy V. Method of machining glass
US7261920B2 (en) * 2002-04-24 2007-08-28 Sipix Imaging, Inc. Process for forming a patterned thin film structure on a substrate
US8002948B2 (en) * 2002-04-24 2011-08-23 Sipix Imaging, Inc. Process for forming a patterned thin film structure on a substrate
TWI268813B (en) * 2002-04-24 2006-12-21 Sipix Imaging Inc Process for forming a patterned thin film conductive structure on a substrate
US7156945B2 (en) * 2002-04-24 2007-01-02 Sipix Imaging, Inc. Process for forming a patterned thin film structure for in-mold decoration
US7972472B2 (en) * 2002-04-24 2011-07-05 Sipix Imaging, Inc. Process for forming a patterned thin film structure for in-mold decoration
JP2004207572A (ja) * 2002-12-26 2004-07-22 Toshiba Corp ステンシルマスク及びマスク形成用基板並びにステンシルマスクの製造方法及びマスク形成用基板の製造方法
EP1629508A2 (fr) * 2003-06-02 2006-03-01 Fox Chase Cancer Center Systemes de selection d'ions polyenergetiques haute energie, systemes de traitement par faisceau d'ions et centres de traitement par faisceau d'ions
JP4362350B2 (ja) * 2003-11-12 2009-11-11 ソニー株式会社 ステンシルマスクの製造方法
US7377032B2 (en) * 2003-11-21 2008-05-27 Mitsui Mining & Smelting Co., Ltd. Process for producing a printed wiring board for mounting electronic components
US7713053B2 (en) * 2005-06-10 2010-05-11 Protochips, Inc. Reusable template for creation of thin films; method of making and using template; and thin films produced from template
US7767126B2 (en) * 2005-08-22 2010-08-03 Sipix Imaging, Inc. Embossing assembly and methods of preparation
WO2013095468A1 (fr) * 2011-12-21 2013-06-27 Intel Corporation Placement de bille dans un modèle à motif photoformé pour interconnexion à pas fin

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE568197A (fr) * 1957-06-12
US3458370A (en) * 1966-01-26 1969-07-29 Us Air Force Fotoform-metallic evaporation mask making
US3712816A (en) * 1967-11-13 1973-01-23 Fairchild Camera Instr Co Process for making hard surface transparent mask
US3561964A (en) * 1968-07-19 1971-02-09 Xerox Corp Method for production of solid state storage panels
DE1904789A1 (de) * 1969-01-31 1970-09-10 Licentia Gmbh Maske zur Abbildung von Mustern auf lichtempfindlichen Schichten
US3740280A (en) * 1971-05-14 1973-06-19 Rca Corp Method of making semiconductor device
US3832176A (en) * 1973-04-06 1974-08-27 Eastman Kodak Co Novel photoresist article and process for its use

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
NEANT *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0044372A2 (fr) * 1980-03-10 1982-01-27 International Business Machines Corporation Fabrication et emploi d'un masque collimateur à haute résolution, ayant des trous beaucoup plus profonds que larges, pour réaliser une croissance épitaxiale sur des éléments semiconducteurs au moyen de faisceaux ioniques
EP0044372A3 (en) * 1980-03-10 1982-03-31 International Business Machines Corporation Fabrication and use of a high aspect ratio, high resolution collimating mask for ion beam growth of semiconductor devices
EP0368089A2 (fr) * 1988-11-07 1990-05-16 Fujitsu Limited Procédé de fabrication d'un masque pour la texturation lithographique
EP0368089A3 (fr) * 1988-11-07 1991-05-22 Fujitsu Limited Procédé de fabrication d'un masque pour la texturation lithographique
US5234781A (en) * 1988-11-07 1993-08-10 Fujitsu Limited Mask for lithographic patterning and a method of manufacturing the same

Also Published As

Publication number Publication date
US4022927A (en) 1977-05-10
GB1523535A (en) 1978-09-06
JPS5322428B2 (fr) 1978-07-08
CA1072389A (fr) 1980-02-26
JPS525271A (en) 1977-01-14
FR2316635B1 (fr) 1978-05-05
DE2627003A1 (de) 1977-01-27

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