DE2616907C2 - Verfahren zur Herstellung eines Halbleiterbauelements - Google Patents

Verfahren zur Herstellung eines Halbleiterbauelements

Info

Publication number
DE2616907C2
DE2616907C2 DE2616907A DE2616907A DE2616907C2 DE 2616907 C2 DE2616907 C2 DE 2616907C2 DE 2616907 A DE2616907 A DE 2616907A DE 2616907 A DE2616907 A DE 2616907A DE 2616907 C2 DE2616907 C2 DE 2616907C2
Authority
DE
Germany
Prior art keywords
gallium arsenide
etching
redox system
etched
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2616907A
Other languages
German (de)
English (en)
Other versions
DE2616907A1 (de
Inventor
Rudolf Paulus Eindhoven Tijburg
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of DE2616907A1 publication Critical patent/DE2616907A1/de
Application granted granted Critical
Publication of DE2616907C2 publication Critical patent/DE2616907C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • H01L21/30612—Etching of AIIIBV compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28575—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising AIIIBV compounds
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Weting (AREA)
  • Led Devices (AREA)
DE2616907A 1975-05-01 1976-04-15 Verfahren zur Herstellung eines Halbleiterbauelements Expired DE2616907C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL7505134A NL7505134A (nl) 1975-05-01 1975-05-01 Werkwijze voor het vervaardigen van een half- geleiderinrichting.

Publications (2)

Publication Number Publication Date
DE2616907A1 DE2616907A1 (de) 1976-11-11
DE2616907C2 true DE2616907C2 (de) 1983-04-14

Family

ID=19823678

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2616907A Expired DE2616907C2 (de) 1975-05-01 1976-04-15 Verfahren zur Herstellung eines Halbleiterbauelements

Country Status (9)

Country Link
US (1) US4049488A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
JP (1) JPS51134576A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
CA (1) CA1059242A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
DE (1) DE2616907C2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
FR (1) FR2309977A1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
GB (1) GB1543737A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
IT (1) IT1059016B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
NL (1) NL7505134A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)
SE (1) SE409259B (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4145478A (en) * 1977-07-28 1979-03-20 Desoto, Inc. Calcium oxide or hydroxide to improve the charge acceptance of electrographic dielectric resins
GB1601059A (en) * 1978-05-31 1981-10-21 Secr Defence Fet devices and their fabrication
GB1602498A (en) * 1978-05-31 1981-11-11 Secr Defence Fet devices and their fabrication
GB1603260A (en) * 1978-05-31 1981-11-25 Secr Defence Devices and their fabrication
JPS55146934A (en) * 1979-05-02 1980-11-15 Agency Of Ind Science & Technol Processing of surface shape of group 3-5 compound semiconductor
JPS55153338A (en) * 1979-05-18 1980-11-29 Fujitsu Ltd Surface treatment of semiconductor substrate
GB2145558A (en) * 1983-08-23 1985-03-27 Standard Telephones Cables Ltd Field effect transistor
DE3416991C1 (de) * 1984-05-09 1986-01-30 Philips Patentverwaltung Gmbh, 2000 Hamburg AEtzloesung und Verfahren zum AEtzen von ferrimagnetischen Granatverbindungen
GB2160823B (en) * 1984-06-28 1987-05-28 Stc Plc Semiconductor devices and their fabrication
US4923564A (en) * 1989-08-24 1990-05-08 American Telephone And Telegraph Company Selective etching process
FR2667724B1 (fr) * 1990-10-09 1992-11-27 Thomson Csf Procede de realisation des metallisations d'electrodes d'un transistor.
US5110765A (en) * 1990-11-30 1992-05-05 At&T Bell Laboratories Selective etch for GaAs-containing group III-V compounds

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3772100A (en) * 1971-06-30 1973-11-13 Denki Onkyo Co Ltd Method for forming strips on semiconductor device
US3833435A (en) * 1972-09-25 1974-09-03 Bell Telephone Labor Inc Dielectric optical waveguides and technique for fabricating same
US3801391A (en) * 1972-09-25 1974-04-02 Bell Telephone Labor Inc Method for selectively etching alxga1-xas multiplier structures
US3954534A (en) * 1974-10-29 1976-05-04 Xerox Corporation Method of forming light emitting diode array with dome geometry

Also Published As

Publication number Publication date
JPS51134576A (en) 1976-11-22
SE7604891L (sv) 1976-11-02
NL7505134A (nl) 1976-11-03
JPS5642134B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1981-10-02
IT1059016B (it) 1982-05-31
CA1059242A (en) 1979-07-24
FR2309977A1 (fr) 1976-11-26
DE2616907A1 (de) 1976-11-11
GB1543737A (en) 1979-04-04
US4049488A (en) 1977-09-20
FR2309977B1 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1982-08-20
SE409259B (sv) 1979-08-06

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Legal Events

Date Code Title Description
OD Request for examination
8181 Inventor (new situation)

Free format text: TIJBURG, RUDOLFS PAULUS, EINDHOVEN, NL

D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee