DE2531249A1 - Vielschicht-thyristor - Google Patents
Vielschicht-thyristorInfo
- Publication number
- DE2531249A1 DE2531249A1 DE19752531249 DE2531249A DE2531249A1 DE 2531249 A1 DE2531249 A1 DE 2531249A1 DE 19752531249 DE19752531249 DE 19752531249 DE 2531249 A DE2531249 A DE 2531249A DE 2531249 A1 DE2531249 A1 DE 2531249A1
- Authority
- DE
- Germany
- Prior art keywords
- thyristor
- layers
- semiconductor type
- layer
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 claims description 118
- 239000000463 material Substances 0.000 claims description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 13
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 4
- 239000004020 conductor Substances 0.000 claims description 4
- 238000011109 contamination Methods 0.000 claims description 3
- 238000002955 isolation Methods 0.000 claims description 3
- 238000010292 electrical insulation Methods 0.000 claims 1
- 230000007274 generation of a signal involved in cell-cell signaling Effects 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 8
- VMXJCRHCUWKQCB-UHFFFAOYSA-N NPNP Chemical compound NPNP VMXJCRHCUWKQCB-UHFFFAOYSA-N 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000004888 barrier function Effects 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 230000007704 transition Effects 0.000 description 4
- 239000002800 charge carrier Substances 0.000 description 3
- 238000011161 development Methods 0.000 description 3
- 230000018109 developmental process Effects 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 230000001172 regenerating effect Effects 0.000 description 2
- 241000191291 Abies alba Species 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/80—PNPN diodes, e.g. Shockley diodes or break-over diodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D18/00—Thyristors
- H10D18/80—Bidirectional devices, e.g. triacs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Thyristors (AREA)
- Treatments Of Macromolecular Shaped Articles (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US48878974A | 1974-07-15 | 1974-07-15 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2531249A1 true DE2531249A1 (de) | 1976-02-05 |
Family
ID=23941129
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19752531249 Withdrawn DE2531249A1 (de) | 1974-07-15 | 1975-07-12 | Vielschicht-thyristor |
Country Status (7)
| Country | Link |
|---|---|
| JP (1) | JPS5133986A (enExample) |
| BE (1) | BE831400A (enExample) |
| CH (2) | CH609714A5 (enExample) |
| DE (1) | DE2531249A1 (enExample) |
| FR (1) | FR2279224A1 (enExample) |
| GB (1) | GB1513000A (enExample) |
| NL (1) | NL7508200A (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2560441B1 (fr) * | 1984-02-28 | 1986-06-13 | Telemecanique Electrique | Structure de thyristor a emetteur a double couche, destine a la commutation par tout ou rien de tensions elevees |
| FR2574594B1 (fr) * | 1984-12-11 | 1987-01-16 | Silicium Semiconducteur Ssc | Structure integree de triac a commande par diac |
| US4918505A (en) * | 1988-07-19 | 1990-04-17 | Tektronix, Inc. | Method of treating an integrated circuit to provide a temperature sensor that is integral therewith |
| FR2688941B1 (fr) * | 1992-03-20 | 1994-06-17 | Sgs Thomson Microelectronics | Interrupteur de tension alternative a declenchement sur une alternance determinee et conduction par periode. |
| DE19721365A1 (de) * | 1997-05-22 | 1998-11-26 | Asea Brown Boveri | Beidseitig steuerbarer Thyristor |
| US9742385B2 (en) | 2013-06-24 | 2017-08-22 | Ideal Power, Inc. | Bidirectional semiconductor switch with passive turnoff |
| JP6491201B2 (ja) | 2013-06-24 | 2019-03-27 | アイディール パワー インコーポレイテッド | 双方向バイポーラトランジスタを有するシステム、回路、素子、及び方法 |
| US9799731B2 (en) | 2013-06-24 | 2017-10-24 | Ideal Power, Inc. | Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors |
| US9355853B2 (en) | 2013-12-11 | 2016-05-31 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
| US11637016B2 (en) | 2013-12-11 | 2023-04-25 | Ideal Power Inc. | Systems and methods for bidirectional device fabrication |
| US9660551B2 (en) | 2014-11-06 | 2017-05-23 | Ideal Power, Inc. | Operating point optimization with double-base-contact bidirectional bipolar junction transistor circuits, methods, and systems |
| CN109326640A (zh) * | 2018-10-25 | 2019-02-12 | 深圳市鹏朗贸易有限责任公司 | 一种门极换流晶闸管及其制造方法 |
-
1974
- 1974-01-07 CH CH933875A patent/CH609714A5/xx not_active IP Right Cessation
-
1975
- 1975-07-09 NL NL7508200A patent/NL7508200A/xx not_active Application Discontinuation
- 1975-07-09 GB GB28890/75A patent/GB1513000A/en not_active Expired
- 1975-07-10 FR FR7521677A patent/FR2279224A1/fr active Granted
- 1975-07-12 DE DE19752531249 patent/DE2531249A1/de not_active Withdrawn
- 1975-07-15 JP JP50086603A patent/JPS5133986A/ja active Pending
- 1975-07-15 BE BE158328A patent/BE831400A/xx unknown
- 1975-07-15 CH CH9338/75A patent/CH609814A5/xx not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| FR2279224A1 (fr) | 1976-02-13 |
| BE831400A (fr) | 1976-01-15 |
| CH609714A5 (en) | 1979-03-15 |
| CH609814A5 (en) | 1979-03-15 |
| GB1513000A (en) | 1978-06-01 |
| JPS5133986A (en) | 1976-03-23 |
| NL7508200A (nl) | 1976-01-19 |
| FR2279224B1 (enExample) | 1981-12-24 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |