JPS5133986A - Handotaisuitsuchioyobi handotaisuitsuchisoshi - Google Patents

Handotaisuitsuchioyobi handotaisuitsuchisoshi

Info

Publication number
JPS5133986A
JPS5133986A JP50086603A JP8660375A JPS5133986A JP S5133986 A JPS5133986 A JP S5133986A JP 50086603 A JP50086603 A JP 50086603A JP 8660375 A JP8660375 A JP 8660375A JP S5133986 A JPS5133986 A JP S5133986A
Authority
JP
Japan
Prior art keywords
handotaisuitsuchisoshi
handotaisuitsuchioyobi
handotaisuitsuchioyobi handotaisuitsuchisoshi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP50086603A
Other languages
English (en)
Japanese (ja)
Inventor
Rerudon Hatosun Jiirudo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Individual
Original Assignee
Individual
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Individual filed Critical Individual
Publication of JPS5133986A publication Critical patent/JPS5133986A/ja
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/80PNPN diodes, e.g. Shockley diodes or break-over diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/80Bidirectional devices, e.g. triacs 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass

Landscapes

  • Thyristors (AREA)
  • Treatments Of Macromolecular Shaped Articles (AREA)
JP50086603A 1974-07-15 1975-07-15 Handotaisuitsuchioyobi handotaisuitsuchisoshi Pending JPS5133986A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48878974A 1974-07-15 1974-07-15

Publications (1)

Publication Number Publication Date
JPS5133986A true JPS5133986A (en) 1976-03-23

Family

ID=23941129

Family Applications (1)

Application Number Title Priority Date Filing Date
JP50086603A Pending JPS5133986A (en) 1974-07-15 1975-07-15 Handotaisuitsuchioyobi handotaisuitsuchisoshi

Country Status (7)

Country Link
JP (1) JPS5133986A (enExample)
BE (1) BE831400A (enExample)
CH (2) CH609714A5 (enExample)
DE (1) DE2531249A1 (enExample)
FR (1) FR2279224A1 (enExample)
GB (1) GB1513000A (enExample)
NL (1) NL7508200A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH118377A (ja) * 1997-05-22 1999-01-12 Asea Brown Boveri Ag 双方向に制御可能なサイリスタ
CN109326640A (zh) * 2018-10-25 2019-02-12 深圳市鹏朗贸易有限责任公司 一种门极换流晶闸管及其制造方法

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2560441B1 (fr) * 1984-02-28 1986-06-13 Telemecanique Electrique Structure de thyristor a emetteur a double couche, destine a la commutation par tout ou rien de tensions elevees
FR2574594B1 (fr) * 1984-12-11 1987-01-16 Silicium Semiconducteur Ssc Structure integree de triac a commande par diac
US4918505A (en) * 1988-07-19 1990-04-17 Tektronix, Inc. Method of treating an integrated circuit to provide a temperature sensor that is integral therewith
FR2688941B1 (fr) * 1992-03-20 1994-06-17 Sgs Thomson Microelectronics Interrupteur de tension alternative a declenchement sur une alternance determinee et conduction par periode.
US9742385B2 (en) 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
JP6491201B2 (ja) 2013-06-24 2019-03-27 アイディール パワー インコーポレイテッド 双方向バイポーラトランジスタを有するシステム、回路、素子、及び方法
US9799731B2 (en) 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
US9355853B2 (en) 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9660551B2 (en) 2014-11-06 2017-05-23 Ideal Power, Inc. Operating point optimization with double-base-contact bidirectional bipolar junction transistor circuits, methods, and systems

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH118377A (ja) * 1997-05-22 1999-01-12 Asea Brown Boveri Ag 双方向に制御可能なサイリスタ
CN109326640A (zh) * 2018-10-25 2019-02-12 深圳市鹏朗贸易有限责任公司 一种门极换流晶闸管及其制造方法

Also Published As

Publication number Publication date
FR2279224A1 (fr) 1976-02-13
BE831400A (fr) 1976-01-15
CH609714A5 (en) 1979-03-15
CH609814A5 (en) 1979-03-15
GB1513000A (en) 1978-06-01
DE2531249A1 (de) 1976-02-05
NL7508200A (nl) 1976-01-19
FR2279224B1 (enExample) 1981-12-24

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