FR2279224A1 - Composant semi-conducteur de commutation a couches multiples - Google Patents

Composant semi-conducteur de commutation a couches multiples

Info

Publication number
FR2279224A1
FR2279224A1 FR7521677A FR7521677A FR2279224A1 FR 2279224 A1 FR2279224 A1 FR 2279224A1 FR 7521677 A FR7521677 A FR 7521677A FR 7521677 A FR7521677 A FR 7521677A FR 2279224 A1 FR2279224 A1 FR 2279224A1
Authority
FR
France
Prior art keywords
semiconductor component
switching semiconductor
layer switching
layer
component
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
FR7521677A
Other languages
English (en)
French (fr)
Other versions
FR2279224B1 (enExample
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
HUTSON JEARLD
Original Assignee
HUTSON JEARLD
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by HUTSON JEARLD filed Critical HUTSON JEARLD
Publication of FR2279224A1 publication Critical patent/FR2279224A1/fr
Application granted granted Critical
Publication of FR2279224B1 publication Critical patent/FR2279224B1/fr
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00Diodes
    • H10D8/80PNPN diodes, e.g. Shockley diodes or break-over diodes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D18/00Thyristors
    • H10D18/80Bidirectional devices, e.g. triacs 
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
FR7521677A 1974-07-15 1975-07-10 Composant semi-conducteur de commutation a couches multiples Granted FR2279224A1 (fr)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US48878974A 1974-07-15 1974-07-15

Publications (2)

Publication Number Publication Date
FR2279224A1 true FR2279224A1 (fr) 1976-02-13
FR2279224B1 FR2279224B1 (enExample) 1981-12-24

Family

ID=23941129

Family Applications (1)

Application Number Title Priority Date Filing Date
FR7521677A Granted FR2279224A1 (fr) 1974-07-15 1975-07-10 Composant semi-conducteur de commutation a couches multiples

Country Status (7)

Country Link
JP (1) JPS5133986A (enExample)
BE (1) BE831400A (enExample)
CH (2) CH609714A5 (enExample)
DE (1) DE2531249A1 (enExample)
FR (1) FR2279224A1 (enExample)
GB (1) GB1513000A (enExample)
NL (1) NL7508200A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2560441A1 (fr) * 1984-02-28 1985-08-30 Telemecanique Electrique Structure de thyristor a emetteur a double couche, destine a la commutation par tout ou rien de tensions elevees
FR2574594A1 (fr) * 1984-12-11 1986-06-13 Silicium Semiconducteur Ssc Structure integree de triac a commande par diac
EP0561721A1 (fr) * 1992-03-20 1993-09-22 STMicroelectronics S.A. Interrupteur de tension alternative

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4918505A (en) * 1988-07-19 1990-04-17 Tektronix, Inc. Method of treating an integrated circuit to provide a temperature sensor that is integral therewith
DE19721365A1 (de) * 1997-05-22 1998-11-26 Asea Brown Boveri Beidseitig steuerbarer Thyristor
US9742385B2 (en) 2013-06-24 2017-08-22 Ideal Power, Inc. Bidirectional semiconductor switch with passive turnoff
JP6491201B2 (ja) 2013-06-24 2019-03-27 アイディール パワー インコーポレイテッド 双方向バイポーラトランジスタを有するシステム、回路、素子、及び方法
US9799731B2 (en) 2013-06-24 2017-10-24 Ideal Power, Inc. Multi-level inverters using sequenced drive of double-base bidirectional bipolar transistors
US9355853B2 (en) 2013-12-11 2016-05-31 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US11637016B2 (en) 2013-12-11 2023-04-25 Ideal Power Inc. Systems and methods for bidirectional device fabrication
US9660551B2 (en) 2014-11-06 2017-05-23 Ideal Power, Inc. Operating point optimization with double-base-contact bidirectional bipolar junction transistor circuits, methods, and systems
CN109326640A (zh) * 2018-10-25 2019-02-12 深圳市鹏朗贸易有限责任公司 一种门极换流晶闸管及其制造方法

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2560441A1 (fr) * 1984-02-28 1985-08-30 Telemecanique Electrique Structure de thyristor a emetteur a double couche, destine a la commutation par tout ou rien de tensions elevees
FR2574594A1 (fr) * 1984-12-11 1986-06-13 Silicium Semiconducteur Ssc Structure integree de triac a commande par diac
EP0191255A1 (fr) * 1984-12-11 1986-08-20 Thomson-Csf Structure intégrée de triac à commande par diac
US4755862A (en) * 1984-12-11 1988-07-05 Sgs-Thomson Microelectronics S.A. Integrated triac structure with diac control
EP0561721A1 (fr) * 1992-03-20 1993-09-22 STMicroelectronics S.A. Interrupteur de tension alternative
FR2688941A1 (fr) * 1992-03-20 1993-09-24 Sgs Thomson Microelectronics Interrupteur de tension alternative a declenchement sur une alternance determinee et conduction par periode.

Also Published As

Publication number Publication date
BE831400A (fr) 1976-01-15
CH609714A5 (en) 1979-03-15
CH609814A5 (en) 1979-03-15
GB1513000A (en) 1978-06-01
JPS5133986A (en) 1976-03-23
DE2531249A1 (de) 1976-02-05
NL7508200A (nl) 1976-01-19
FR2279224B1 (enExample) 1981-12-24

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Legal Events

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