DE2520774A1 - Verfahren zur herstellung von hochreinem elementarem silicium - Google Patents

Verfahren zur herstellung von hochreinem elementarem silicium

Info

Publication number
DE2520774A1
DE2520774A1 DE19752520774 DE2520774A DE2520774A1 DE 2520774 A1 DE2520774 A1 DE 2520774A1 DE 19752520774 DE19752520774 DE 19752520774 DE 2520774 A DE2520774 A DE 2520774A DE 2520774 A1 DE2520774 A1 DE 2520774A1
Authority
DE
Germany
Prior art keywords
silicon
hydrogen
reaction
reactor
particles
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19752520774
Other languages
German (de)
English (en)
Inventor
Jun John M Blocher
Melvin F Browning
Ohio Columbus
Tex Dallas
Haludar S N Setty
Gene Felix Wakefield
Carl L Yaws
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE2520774A1 publication Critical patent/DE2520774A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/24Deposition of silicon only
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01BNON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00Silicon; Compounds thereof
    • C01B33/02Silicon

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Silicon Compounds (AREA)
  • Chemical Vapour Deposition (AREA)
DE19752520774 1974-05-13 1975-05-09 Verfahren zur herstellung von hochreinem elementarem silicium Withdrawn DE2520774A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US46917974A 1974-05-13 1974-05-13

Publications (1)

Publication Number Publication Date
DE2520774A1 true DE2520774A1 (de) 1975-11-27

Family

ID=23862763

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752520774 Withdrawn DE2520774A1 (de) 1974-05-13 1975-05-09 Verfahren zur herstellung von hochreinem elementarem silicium

Country Status (4)

Country Link
JP (1) JPS50155423A (it)
DE (1) DE2520774A1 (it)
FR (1) FR2271173B1 (it)
GB (1) GB1498266A (it)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3638931A1 (de) * 1985-12-28 1987-07-02 Korea Res Inst Chem Tech Verfahren und vorrichtung zur herstellung von hochreinem polykristallinem silizium
DE10060469A1 (de) * 2000-12-06 2002-07-04 Solarworld Ag Verfahren zur Herstellung von hochreinem, granularem Silizium

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2620739A1 (de) * 1976-05-11 1977-12-01 Wacker Chemitronic Verfahren zur herstellung von hochreinem silicium
GB2028289B (en) * 1978-08-18 1982-09-02 Schumacher Co J C Producing silicon
JPH01282194A (ja) * 1988-01-19 1989-11-14 Osaka Titanium Co Ltd 単結晶製造方法
JPH0742080Y2 (ja) * 1990-07-12 1995-09-27 川崎重工業株式会社 高温ガスを用いる流動層炉
NO329968B1 (no) * 2007-08-17 2011-01-31 Silansil As Anordning og fremgangsmate for kompaktering av silisiumpulver

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3638931A1 (de) * 1985-12-28 1987-07-02 Korea Res Inst Chem Tech Verfahren und vorrichtung zur herstellung von hochreinem polykristallinem silizium
DE10060469A1 (de) * 2000-12-06 2002-07-04 Solarworld Ag Verfahren zur Herstellung von hochreinem, granularem Silizium

Also Published As

Publication number Publication date
FR2271173B1 (it) 1979-04-06
JPS50155423A (it) 1975-12-15
FR2271173A1 (it) 1975-12-12
GB1498266A (en) 1978-01-18

Similar Documents

Publication Publication Date Title
US3012862A (en) Silicon production
US3933985A (en) Process for production of polycrystalline silicon
DE3635064C2 (it)
DE3248813C2 (it)
DE3781223T2 (de) Herstellung von polykristallinem silizium durch pyrolyse von silan.
EP0896952A1 (de) Verfahren zur Herstellung von hochreinem Siliciumgranulat
EP2426085B1 (de) Verfahren zur Herstellung von polykristallinem Silicium
DE19740923B4 (de) Verfahren zur Herstellung von Trichlorsilan
EP1544167B1 (de) Staub- und porenfreies hochreines Polysiliciumgranulat
EP1341721B1 (de) Verfahren zur herstellung von silan
DE2919086A1 (de) Verfahren zur herstellung von polykristallinem silizium
DE2825415A1 (de) Verfahren und vorrichtung zur herstellung von silicium
DE69809899T2 (de) Wirbelschichtreaktor zur abscheidung eines materiales auf einer oberfläche mittels cvd und verfahren zur herstellung eines beschichteten substrats mit diesem reaktor
DE102004010055A1 (de) Verfahren zur Herstellung von Silicium
DE1054436B (de) Verfahren zur Herstellung von kompaktem Silicium hohen Reinheitsgrades
EP1370490A1 (de) Verfahren zur herstellung von chlorsilanen
DE3877857T2 (de) Fliessbettreaktor und verfahren.
EP4065512B1 (de) Verfahren zur entfernung einer verunreinigung aus einem chlorsilangemisch
DE3302745A1 (de) Verfahren zur herstellung von gegenstaenden aus hochreinem synthetischem quarzglas
DE2520774A1 (de) Verfahren zur herstellung von hochreinem elementarem silicium
DE3241440A1 (de) Verfahren zur herstellung von siliciumnitrid-pulver
EP1326803A1 (de) Verfahren zur herstellung von trichlorsilan
DE855851C (de) Verfahren zur Herstellung von Dimethyldichlorsilan
DE3207844A1 (de) Verfahren zur herstellung von quarzglas
DE69808171T2 (de) Entfernung von Phosphor aus Chlorosilan

Legal Events

Date Code Title Description
8141 Disposal/no request for examination