DE2514922C2 - Gegen thermische Wechselbelastung beständiges Halbleiterbauelement - Google Patents

Gegen thermische Wechselbelastung beständiges Halbleiterbauelement

Info

Publication number
DE2514922C2
DE2514922C2 DE2514922A DE2514922A DE2514922C2 DE 2514922 C2 DE2514922 C2 DE 2514922C2 DE 2514922 A DE2514922 A DE 2514922A DE 2514922 A DE2514922 A DE 2514922A DE 2514922 C2 DE2514922 C2 DE 2514922C2
Authority
DE
Germany
Prior art keywords
tin
solder
semiconductor
soft
solders
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2514922A
Other languages
German (de)
English (en)
Other versions
DE2514922A1 (de
Inventor
Helmuth 8540 Schwabach Froloff
Theodor 8521 Bubenreuth Tovar
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semikron GmbH and Co KG
Original Assignee
Semikron GmbH and Co KG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semikron GmbH and Co KG filed Critical Semikron GmbH and Co KG
Priority to DE2514922A priority Critical patent/DE2514922C2/de
Priority to CH202776A priority patent/CH619073A5/de
Priority to GB42953/78A priority patent/GB1548756A/en
Priority to GB11752/76A priority patent/GB1548755A/en
Priority to US05/670,826 priority patent/US4005454A/en
Priority to BR7602045A priority patent/BR7602045A/pt
Publication of DE2514922A1 publication Critical patent/DE2514922A1/de
Application granted granted Critical
Publication of DE2514922C2 publication Critical patent/DE2514922C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K35/00—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting
    • B23K35/22—Rods, electrodes, materials, or media, for use in soldering, welding, or cutting characterised by the composition or nature of the material
    • B23K35/24—Selection of soldering or welding materials proper
    • B23K35/26—Selection of soldering or welding materials proper with the principal constituent melting at less than 400°C
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/20—Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07331—Connecting techniques
    • H10W72/07336—Soldering or alloying
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/071—Connecting or disconnecting
    • H10W72/073—Connecting or disconnecting of die-attach connectors
    • H10W72/07351—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting
    • H10W72/07352—Connecting or disconnecting of die-attach connectors characterised by changes in properties of the die-attach connectors during connecting changes in structures or sizes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/321—Structures or relative sizes of die-attach connectors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/30—Die-attach connectors
    • H10W72/351—Materials of die-attach connectors
    • H10W72/352—Materials of die-attach connectors comprising metals or metalloids, e.g. solders

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Die Bonding (AREA)
DE2514922A 1975-04-05 1975-04-05 Gegen thermische Wechselbelastung beständiges Halbleiterbauelement Expired DE2514922C2 (de)

Priority Applications (6)

Application Number Priority Date Filing Date Title
DE2514922A DE2514922C2 (de) 1975-04-05 1975-04-05 Gegen thermische Wechselbelastung beständiges Halbleiterbauelement
CH202776A CH619073A5 (enExample) 1975-04-05 1976-02-19
GB42953/78A GB1548756A (en) 1975-04-05 1976-03-24 Semicondutor device
GB11752/76A GB1548755A (en) 1975-04-05 1976-03-24 Semicondutor device
US05/670,826 US4005454A (en) 1975-04-05 1976-03-26 Semiconductor device having a solderable contacting coating on its opposite surfaces
BR7602045A BR7602045A (pt) 1975-04-05 1976-04-02 Elemento construtivo semicondutor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE2514922A DE2514922C2 (de) 1975-04-05 1975-04-05 Gegen thermische Wechselbelastung beständiges Halbleiterbauelement

Publications (2)

Publication Number Publication Date
DE2514922A1 DE2514922A1 (de) 1976-10-14
DE2514922C2 true DE2514922C2 (de) 1983-01-27

Family

ID=5943167

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2514922A Expired DE2514922C2 (de) 1975-04-05 1975-04-05 Gegen thermische Wechselbelastung beständiges Halbleiterbauelement

Country Status (5)

Country Link
US (1) US4005454A (enExample)
BR (1) BR7602045A (enExample)
CH (1) CH619073A5 (enExample)
DE (1) DE2514922C2 (enExample)
GB (2) GB1548755A (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3736671C1 (en) * 1987-10-29 1989-06-08 Semikron Elektronik Gmbh Method for producing semiconductor components

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JPS5295972A (en) * 1976-02-09 1977-08-12 Hitachi Ltd Semiconductor element
WO1980001967A1 (en) * 1979-03-08 1980-09-18 Gen Electric Thermo-compression bonding a semiconductor to strain buffer
US4257156A (en) * 1979-03-09 1981-03-24 General Electric Company Method for thermo-compression diffusion bonding each side of a substrateless semiconductor device wafer to respective structured copper strain buffers
US4498096A (en) * 1981-01-30 1985-02-05 Motorola, Inc. Button rectifier package for non-planar die
JPS59193036A (ja) * 1983-04-16 1984-11-01 Toshiba Corp 半導体装置の製造方法
DE3513530A1 (de) * 1984-06-01 1985-12-05 Bbc Brown Boveri & Cie Verfahren zur herstellung von leistungshalbleitermodulen mit isoliertem aufbau
US4954870A (en) * 1984-12-28 1990-09-04 Kabushiki Kaisha Toshiba Semiconductor device
DE4107660C2 (de) * 1991-03-09 1995-05-04 Bosch Gmbh Robert Verfahren zur Montage von Silizium-Plättchen auf metallischen Montageflächen
US5441576A (en) * 1993-02-01 1995-08-15 Bierschenk; James L. Thermoelectric cooler
JP3271475B2 (ja) * 1994-08-01 2002-04-02 株式会社デンソー 電気素子の接合材料および接合方法
GB2300375B (en) * 1994-08-01 1998-02-25 Nippon Denso Co Bonding method for electric element
DE19632378B4 (de) * 1996-08-10 2007-01-25 Robert Bosch Gmbh Diffusionslötverbindung und Verfahren zur Herstellung von Diffusionslötverbindungen
US6179935B1 (en) * 1997-04-16 2001-01-30 Fuji Electric Co., Ltd. Solder alloys
US7011378B2 (en) * 1998-09-03 2006-03-14 Ge Novasensor, Inc. Proportional micromechanical valve
ATE393319T1 (de) 1998-09-03 2008-05-15 Ge Novasensor Inc Proportionale, mikromechanische vorrichtung
US6523560B1 (en) 1998-09-03 2003-02-25 General Electric Corporation Microvalve with pressure equalization
GB2346383B (en) * 1999-01-28 2001-01-17 Murata Manufacturing Co Lead-free solder and soldered article
MY116246A (en) * 1999-01-28 2003-12-31 Murata Manufacturing Co Lead-free solder and soldered article
US6845962B1 (en) * 2000-03-22 2005-01-25 Kelsey-Hayes Company Thermally actuated microvalve device
US6505811B1 (en) 2000-06-27 2003-01-14 Kelsey-Hayes Company High-pressure fluid control valve assembly having a microvalve device attached to fluid distributing substrate
US6897567B2 (en) 2000-07-31 2005-05-24 Romh Co., Ltd. Method of making wireless semiconductor device, and leadframe used therefor
US8011388B2 (en) * 2003-11-24 2011-09-06 Microstaq, INC Thermally actuated microvalve with multiple fluid ports
WO2005084211A2 (en) * 2004-02-27 2005-09-15 Alumina Micro Llc Hybrid micro/macro plate valve
US20070251586A1 (en) * 2003-11-24 2007-11-01 Fuller Edward N Electro-pneumatic control valve with microvalve pilot
KR20060109959A (ko) * 2003-11-24 2006-10-23 알루미나 마이크로 엘엘씨 가변형 변위 압축기 제어용 마이크로밸브 장치
WO2005091820A2 (en) * 2004-03-05 2005-10-06 Alumina Micro Llc Selective bonding for forming a microvalve
US7181919B2 (en) * 2004-03-31 2007-02-27 Denso Corporation System utilizing waste heat of internal combustion engine
US7156365B2 (en) * 2004-07-27 2007-01-02 Kelsey-Hayes Company Method of controlling microvalve actuator
KR20070092328A (ko) * 2005-01-14 2007-09-12 알루미나 마이크로 엘엘씨 가변용량형 압축기를 제어하기 위한 시스템 및 방법
WO2008076388A1 (en) 2006-12-15 2008-06-26 Microstaq, Inc. Microvalve device
WO2008121369A1 (en) 2007-03-30 2008-10-09 Microstaq, Inc. Pilot operated micro spool valve
WO2008121365A1 (en) 2007-03-31 2008-10-09 Microstaq, Inc. Pilot operated spool valve
US8662468B2 (en) * 2008-08-09 2014-03-04 Dunan Microstaq, Inc. Microvalve device
US8113482B2 (en) * 2008-08-12 2012-02-14 DunAn Microstaq Microvalve device with improved fluid routing
CN102308131B (zh) 2008-12-06 2014-01-08 盾安美斯泰克有限公司 流体流动控制组件
WO2010117874A2 (en) 2009-04-05 2010-10-14 Microstaq, Inc. Method and structure for optimizing heat exchanger performance
WO2011022267A2 (en) 2009-08-17 2011-02-24 Microstaq, Inc. Micromachined device and control method
US8956884B2 (en) 2010-01-28 2015-02-17 Dunan Microstaq, Inc. Process for reconditioning semiconductor surface to facilitate bonding
US9006844B2 (en) 2010-01-28 2015-04-14 Dunan Microstaq, Inc. Process and structure for high temperature selective fusion bonding
US8996141B1 (en) 2010-08-26 2015-03-31 Dunan Microstaq, Inc. Adaptive predictive functional controller
KR101204187B1 (ko) * 2010-11-02 2012-11-23 삼성전기주식회사 소성 접합을 이용한 파워 모듈 및 그 제조 방법
US8925793B2 (en) 2012-01-05 2015-01-06 Dunan Microstaq, Inc. Method for making a solder joint
US9140613B2 (en) 2012-03-16 2015-09-22 Zhejiang Dunan Hetian Metal Co., Ltd. Superheat sensor
US9188375B2 (en) 2013-12-04 2015-11-17 Zhejiang Dunan Hetian Metal Co., Ltd. Control element and check valve assembly
US20180226533A1 (en) * 2017-02-08 2018-08-09 Amberwave Inc. Thin Film Solder Bond
CN111471889B (zh) * 2020-04-14 2021-01-05 中机智能装备创新研究院(宁波)有限公司 一种锡基巴氏合金及其制备方法和用途

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DE806820C (de) * 1949-10-25 1951-06-18 Rau Fa G Weichlot
BE550714A (enExample) * 1955-09-01
DE1080838B (de) * 1958-01-13 1960-04-28 Licentia Gmbh Legierung zum Weichloeten
US3046651A (en) * 1958-03-14 1962-07-31 Honeywell Regulator Co Soldering technique
BE590762A (enExample) * 1959-05-12
NL121712C (enExample) * 1959-10-15 1900-01-01
DE1196793B (de) * 1961-08-28 1965-07-15 Elektronik M B H Verfahren zum Kontaktieren von Halbleiter-koerpern fuer Halbleiterbauelemente
DE1439129B2 (de) * 1962-02-19 1975-08-07 Semikron Gesellschaft Fuer Gleichrichterbau Und Elektronik Mbh, 8500 Nuernberg Verfahren zum Herstellen von Silizium-Leistungsgleichrichtern
DE1298387C2 (de) * 1964-02-06 1973-07-26 Semikron Gleichrichterbau Halbleiter-Anordnung
US3331997A (en) * 1964-12-31 1967-07-18 Wagner Electric Corp Silicon diode with solder composition attaching ohmic contacts
US3414969A (en) * 1965-02-25 1968-12-10 Solitron Devices Connection arrangement for three-element component to a micro-electronics circuit
US3429040A (en) * 1965-06-18 1969-02-25 Ibm Method of joining a component to a substrate
DE1589543B2 (de) * 1967-09-12 1972-08-24 Robert Bosch Gmbh, 7000 Stuttgart Halbleiterbauelement und verfahren zu seiner weichlotkontaktierung
US3680196A (en) * 1970-05-08 1972-08-01 Us Navy Process for bonding chip devices to hybrid circuitry
US3930306A (en) * 1974-04-24 1976-01-06 General Instrument Corporation Process for attaching a lead member to a semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3736671C1 (en) * 1987-10-29 1989-06-08 Semikron Elektronik Gmbh Method for producing semiconductor components

Also Published As

Publication number Publication date
DE2514922A1 (de) 1976-10-14
GB1548755A (en) 1979-07-18
BR7602045A (pt) 1976-10-05
CH619073A5 (enExample) 1980-08-29
US4005454A (en) 1977-01-25
GB1548756A (en) 1979-07-18

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Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition
8339 Ceased/non-payment of the annual fee