DE2505245B2 - Festwertspeicherbaustein - Google Patents

Festwertspeicherbaustein

Info

Publication number
DE2505245B2
DE2505245B2 DE19752505245 DE2505245A DE2505245B2 DE 2505245 B2 DE2505245 B2 DE 2505245B2 DE 19752505245 DE19752505245 DE 19752505245 DE 2505245 A DE2505245 A DE 2505245A DE 2505245 B2 DE2505245 B2 DE 2505245B2
Authority
DE
Germany
Prior art keywords
column
read
line
auxiliary
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
DE19752505245
Other languages
German (de)
English (en)
Other versions
DE2505245C3 (OSRAM
DE2505245A1 (de
Inventor
Ingo Dipl.-Ing.; Scharbert Jürgen Dipl.-Phys.; 8000 München Gröger
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens AG
Original Assignee
Siemens AG
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens AG filed Critical Siemens AG
Priority to DE19752505245 priority Critical patent/DE2505245B2/de
Priority to US05/651,909 priority patent/US4037218A/en
Priority to FR7603089A priority patent/FR2300396A1/fr
Publication of DE2505245A1 publication Critical patent/DE2505245A1/de
Publication of DE2505245B2 publication Critical patent/DE2505245B2/de
Application granted granted Critical
Publication of DE2505245C3 publication Critical patent/DE2505245C3/de
Granted legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
    • G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
    • G11C17/16—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM using electrically-fusible links

Landscapes

  • Read Only Memory (AREA)
  • Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
DE19752505245 1975-02-07 1975-02-07 Festwertspeicherbaustein Granted DE2505245B2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
DE19752505245 DE2505245B2 (de) 1975-02-07 1975-02-07 Festwertspeicherbaustein
US05/651,909 US4037218A (en) 1975-02-07 1976-01-23 Read only memory module
FR7603089A FR2300396A1 (fr) 1975-02-07 1976-02-04 Module de memoire fixe

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19752505245 DE2505245B2 (de) 1975-02-07 1975-02-07 Festwertspeicherbaustein

Publications (3)

Publication Number Publication Date
DE2505245A1 DE2505245A1 (de) 1976-08-19
DE2505245B2 true DE2505245B2 (de) 1977-07-07
DE2505245C3 DE2505245C3 (OSRAM) 1978-03-02

Family

ID=5938384

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19752505245 Granted DE2505245B2 (de) 1975-02-07 1975-02-07 Festwertspeicherbaustein

Country Status (3)

Country Link
US (1) US4037218A (OSRAM)
DE (1) DE2505245B2 (OSRAM)
FR (1) FR2300396A1 (OSRAM)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4099264A (en) * 1976-10-28 1978-07-04 Sperry Rand Corporation Non-destructive interrogation control circuit for a variable threshold FET memory
US4125880A (en) * 1977-03-09 1978-11-14 Harris Corporation Simplified output circuit for read only memories
US4268911A (en) * 1979-06-21 1981-05-19 Fairchild Camera And Instrument Corp. ROM Program security circuits
FR2471024A1 (fr) 1979-12-07 1981-06-12 Ibm France Memoire permanente integree de grande densite
US4651302A (en) * 1984-11-23 1987-03-17 International Business Machines Corporation Read only memory including an isolation network connected between the array of memory cells and the output sense amplifier whereby reading speed is enhanced
EP0441409B1 (en) * 1987-07-29 1993-10-06 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US5175704A (en) * 1987-07-29 1992-12-29 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device
US5936880A (en) * 1997-11-13 1999-08-10 Vlsi Technology, Inc. Bi-layer programmable resistor memory
JP4036641B2 (ja) * 2001-12-20 2008-01-23 株式会社ルネサステクノロジ 撮像素子

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3496545A (en) * 1966-04-18 1970-02-17 Sperry Rand Corp Switching matrix
US3739355A (en) * 1971-05-28 1973-06-12 Burroughs Corp Sense amplifier for high speed memory

Also Published As

Publication number Publication date
DE2505245C3 (OSRAM) 1978-03-02
FR2300396B1 (OSRAM) 1979-08-31
DE2505245A1 (de) 1976-08-19
FR2300396A1 (fr) 1976-09-03
US4037218A (en) 1977-07-19

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Legal Events

Date Code Title Description
C3 Grant after two publication steps (3rd publication)