DE2460988C2 - Verfahren zum Niederschlagen eines Musters aus einem dünnen Film auf einem anorganischen Substrat - Google Patents
Verfahren zum Niederschlagen eines Musters aus einem dünnen Film auf einem anorganischen SubstratInfo
- Publication number
- DE2460988C2 DE2460988C2 DE2460988A DE2460988A DE2460988C2 DE 2460988 C2 DE2460988 C2 DE 2460988C2 DE 2460988 A DE2460988 A DE 2460988A DE 2460988 A DE2460988 A DE 2460988A DE 2460988 C2 DE2460988 C2 DE 2460988C2
- Authority
- DE
- Germany
- Prior art keywords
- layer
- pattern
- mask
- photoresist
- openings
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 title claims description 17
- 239000010409 thin film Substances 0.000 title claims description 14
- 238000000151 deposition Methods 0.000 title claims description 8
- 229920002120 photoresistant polymer Polymers 0.000 claims description 58
- 239000000463 material Substances 0.000 claims description 30
- 230000015572 biosynthetic process Effects 0.000 claims description 7
- 238000004519 manufacturing process Methods 0.000 claims description 7
- 230000008021 deposition Effects 0.000 claims 1
- 239000010410 layer Substances 0.000 description 95
- 239000010408 film Substances 0.000 description 14
- 239000002904 solvent Substances 0.000 description 12
- 239000000203 mixture Substances 0.000 description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 239000013047 polymeric layer Substances 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 5
- 238000000576 coating method Methods 0.000 description 5
- 239000008096 xylene Substances 0.000 description 5
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000001465 metallisation Methods 0.000 description 4
- 150000004945 aromatic hydrocarbons Chemical class 0.000 description 3
- 239000002131 composite material Substances 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 150000002926 oxygen Chemical class 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 2
- 125000001931 aliphatic group Chemical group 0.000 description 2
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 description 2
- 238000004380 ashing Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 229930195733 hydrocarbon Natural products 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- UHOVQNZJYSORNB-UHFFFAOYSA-N monobenzene Natural products C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 238000009987 spinning Methods 0.000 description 2
- 238000000992 sputter etching Methods 0.000 description 2
- RYFMWSXOAZQYPI-UHFFFAOYSA-K trisodium phosphate Chemical compound [Na+].[Na+].[Na+].[O-]P([O-])([O-])=O RYFMWSXOAZQYPI-UHFFFAOYSA-K 0.000 description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 2
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 244000043261 Hevea brasiliensis Species 0.000 description 1
- VQTUBCCKSQIDNK-UHFFFAOYSA-N Isobutene Chemical group CC(C)=C VQTUBCCKSQIDNK-UHFFFAOYSA-N 0.000 description 1
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 1
- 239000004793 Polystyrene Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000004115 Sodium Silicate Substances 0.000 description 1
- 241000779819 Syncarpia glomulifera Species 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 1
- 240000008042 Zea mays Species 0.000 description 1
- 235000005824 Zea mays ssp. parviglumis Nutrition 0.000 description 1
- 235000002017 Zea mays subsp mays Nutrition 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WPPDFTBPZNZZRP-UHFFFAOYSA-N aluminum copper Chemical compound [Al].[Cu] WPPDFTBPZNZZRP-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000003849 aromatic solvent Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 230000000712 assembly Effects 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- -1 benzene hydrocarbons Chemical class 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 239000011651 chromium Substances 0.000 description 1
- 229940125904 compound 1 Drugs 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 235000005822 corn Nutrition 0.000 description 1
- 239000003431 cross linking reagent Substances 0.000 description 1
- 230000000994 depressogenic effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000012777 electrically insulating material Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 150000002430 hydrocarbons Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 229910052500 inorganic mineral Inorganic materials 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 239000003350 kerosene Substances 0.000 description 1
- 239000004922 lacquer Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 239000011707 mineral Substances 0.000 description 1
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical class CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 1
- 150000004950 naphthalene Chemical class 0.000 description 1
- 229920003052 natural elastomer Polymers 0.000 description 1
- 229920001194 natural rubber Polymers 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 239000001739 pinus spp. Substances 0.000 description 1
- 229910052697 platinum Inorganic materials 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 229920002223 polystyrene Polymers 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000002791 soaking Methods 0.000 description 1
- 235000019795 sodium metasilicate Nutrition 0.000 description 1
- 229910000162 sodium phosphate Inorganic materials 0.000 description 1
- 239000001488 sodium phosphate Substances 0.000 description 1
- NTHWMYGWWRZVTN-UHFFFAOYSA-N sodium silicate Chemical compound [Na+].[Na+].[O-][Si]([O-])=O NTHWMYGWWRZVTN-UHFFFAOYSA-N 0.000 description 1
- 229910052911 sodium silicate Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229940036248 turpentine Drugs 0.000 description 1
- 238000002604 ultrasonography Methods 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/04—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching
- H05K3/046—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer
- H05K3/048—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed mechanically, e.g. by punching by selective transfer or selective detachment of a conductive layer using a lift-off resist pattern or a release layer pattern
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
- G03F7/095—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having more than one photosensitive layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/293—Organic, e.g. plastic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Architecture (AREA)
- Structural Engineering (AREA)
- Photosensitive Polymer And Photoresist Processing (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Weting (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US05/448,327 US3982943A (en) | 1974-03-05 | 1974-03-05 | Lift-off method of fabricating thin films and a structure utilizable as a lift-off mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| DE2460988A1 DE2460988A1 (de) | 1975-09-11 |
| DE2460988C2 true DE2460988C2 (de) | 1983-03-31 |
Family
ID=23779862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2460988A Expired DE2460988C2 (de) | 1974-03-05 | 1974-12-21 | Verfahren zum Niederschlagen eines Musters aus einem dünnen Film auf einem anorganischen Substrat |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3982943A (en, 2012) |
| JP (1) | JPS5735451B2 (en, 2012) |
| DE (1) | DE2460988C2 (en, 2012) |
| FR (1) | FR2263605B1 (en, 2012) |
| GB (1) | GB1450509A (en, 2012) |
Families Citing this family (37)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4109045A (en) * | 1972-11-06 | 1978-08-22 | Canon Kabushiki Kaisha | Information recording medium |
| US4191573A (en) * | 1974-10-09 | 1980-03-04 | Fuji Photo Film Co., Ltd. | Photosensitive positive image forming process with two photo-sensitive layers |
| JPS5555540Y2 (en, 2012) * | 1976-01-27 | 1980-12-23 | ||
| FR2365854A1 (fr) * | 1976-09-24 | 1978-04-21 | Thomson Brandt | Procede de fabrication d'un support d'information enregistrable et lisible optiquement et support obtenu par un tel procede |
| DE2658422C2 (de) * | 1976-12-23 | 1986-05-22 | Hoechst Ag, 6230 Frankfurt | Verfahren zur Herstellung eines Negativ-Trockenresistfilms |
| US4165395A (en) * | 1977-06-30 | 1979-08-21 | International Business Machines Corporation | Process for forming a high aspect ratio structure by successive exposures with electron beam and actinic radiation |
| US4218532A (en) * | 1977-10-13 | 1980-08-19 | Bell Telephone Laboratories, Incorporated | Photolithographic technique for depositing thin films |
| JPS5921540B2 (ja) * | 1977-10-26 | 1984-05-21 | セイコーエプソン株式会社 | フオトレジストパタ−ンの形成方法 |
| US4132586A (en) * | 1977-12-20 | 1979-01-02 | International Business Machines Corporation | Selective dry etching of substrates |
| US4180604A (en) * | 1977-12-30 | 1979-12-25 | International Business Machines Corporation | Two layer resist system |
| US4238559A (en) * | 1978-08-24 | 1980-12-09 | International Business Machines Corporation | Two layer resist system |
| US4224361A (en) * | 1978-09-05 | 1980-09-23 | International Business Machines Corporation | High temperature lift-off technique |
| US4202914A (en) * | 1978-12-29 | 1980-05-13 | International Business Machines Corporation | Method of depositing thin films of small dimensions utilizing silicon nitride lift-off mask |
| DE2911503A1 (de) * | 1979-03-23 | 1980-09-25 | Siemens Ag | Verfahren zur herstellung von strukturen aus positiv-photolackschichten ohne stoerende interferenzeffekte |
| JPS5618420A (en) * | 1979-07-23 | 1981-02-21 | Fujitsu Ltd | Manufacture of semiconductor device |
| DE2965147D1 (en) * | 1979-09-21 | 1983-05-11 | Censor Patent Versuch | Process for the transfer of a pattern to a semiconductor slice |
| US4284706A (en) * | 1979-12-03 | 1981-08-18 | International Business Machines Corporation | Lithographic resist composition for a lift-off process |
| US4307179A (en) * | 1980-07-03 | 1981-12-22 | International Business Machines Corporation | Planar metal interconnection system and process |
| US4332881A (en) * | 1980-07-28 | 1982-06-01 | Bell Telephone Laboratories, Incorporated | Resist adhesion in integrated circuit processing |
| US4461071A (en) * | 1982-08-23 | 1984-07-24 | Xerox Corporation | Photolithographic process for fabricating thin film transistors |
| US4464458A (en) * | 1982-12-30 | 1984-08-07 | International Business Machines Corporation | Process for forming resist masks utilizing O-quinone diazide and pyrene |
| US4861699A (en) * | 1983-03-16 | 1989-08-29 | U.S. Philips Corporation | Method of making a master disk used in making optical readable information disks |
| JPS59226346A (ja) * | 1983-06-07 | 1984-12-19 | Fuotopori Ouka Kk | プリント回路の製造方法 |
| US4560435A (en) * | 1984-10-01 | 1985-12-24 | International Business Machines Corporation | Composite back-etch/lift-off stencil for proximity effect minimization |
| US4571374A (en) * | 1984-12-27 | 1986-02-18 | Minnesota Mining And Manufacturing Company | Multilayer dry-film positive-acting laminable photoresist with two photoresist layers wherein one layer includes thermal adhesive |
| US4687730A (en) * | 1985-10-30 | 1987-08-18 | Rca Corporation | Lift-off technique for producing metal pattern using single photoresist processing and oblique angle metal deposition |
| US4654119A (en) * | 1985-11-18 | 1987-03-31 | International Business Machines Corporation | Method for making submicron mask openings using sidewall and lift-off techniques |
| JPH0638299B2 (ja) * | 1986-08-27 | 1994-05-18 | パイオニア株式会社 | 案内溝付光デイスクの製造方法 |
| EP0313993A1 (en) * | 1987-10-20 | 1989-05-03 | Matsushita Electric Industrial Co., Ltd. | Pattern forming method |
| JPH01128522A (ja) * | 1987-11-13 | 1989-05-22 | Fujitsu Ltd | レジストパターンの形成方法 |
| JPH0287146A (ja) * | 1988-09-26 | 1990-03-28 | Hitachi Ltd | 半導体装置の製造方法 |
| AU2884992A (en) | 1991-10-04 | 1993-05-03 | Cfm Technologies, Inc. | Ultracleaning of involuted microparts |
| US5395740A (en) * | 1993-01-27 | 1995-03-07 | Motorola, Inc. | Method for fabricating electrode patterns |
| GB2291207B (en) * | 1994-07-14 | 1998-03-25 | Hyundai Electronics Ind | Method for forming resist patterns |
| JP4180885B2 (ja) * | 2002-11-11 | 2008-11-12 | エスアイアイ・ナノテクノロジー株式会社 | 近視野顕微鏡用光伝搬体プローブの製造方法 |
| US7205228B2 (en) * | 2003-06-03 | 2007-04-17 | Applied Materials, Inc. | Selective metal encapsulation schemes |
| CN115172162A (zh) * | 2022-07-12 | 2022-10-11 | 福建兆元光电有限公司 | 一种金属剥离方法及led制备方法 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE579138A (en, 2012) * | 1958-07-10 | |||
| NL130926C (en, 2012) * | 1959-09-04 | |||
| US3666473A (en) * | 1970-10-06 | 1972-05-30 | Ibm | Positive photoresists for projection exposure |
| US3834907A (en) * | 1971-06-07 | 1974-09-10 | Eastman Kodak Co | Photographic elements containing color-providing layer units for amplification processes |
| US3849136A (en) * | 1973-07-31 | 1974-11-19 | Ibm | Masking of deposited thin films by use of a masking layer photoresist composite |
| US3873361A (en) * | 1973-11-29 | 1975-03-25 | Ibm | Method of depositing thin film utilizing a lift-off mask |
| US3934057A (en) * | 1973-12-19 | 1976-01-20 | International Business Machines Corporation | High sensitivity positive resist layers and mask formation process |
-
1974
- 1974-03-05 US US05/448,327 patent/US3982943A/en not_active Expired - Lifetime
- 1974-12-21 DE DE2460988A patent/DE2460988C2/de not_active Expired
-
1975
- 1975-01-20 FR FR7502829A patent/FR2263605B1/fr not_active Expired
- 1975-02-07 JP JP1552875A patent/JPS5735451B2/ja not_active Expired
- 1975-02-12 GB GB603375A patent/GB1450509A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR2263605A1 (en, 2012) | 1975-10-03 |
| GB1450509A (en) | 1976-09-22 |
| FR2263605B1 (en, 2012) | 1976-12-31 |
| JPS50120826A (en, 2012) | 1975-09-22 |
| JPS5735451B2 (en, 2012) | 1982-07-29 |
| DE2460988A1 (de) | 1975-09-11 |
| US3982943A (en) | 1976-09-28 |
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Free format text: FENG, BAI-CWO, WAPPINGERS FALLS, N.Y., US FLACHBART, RICHARD HENRY, BROOKFIELD CENTER, CONN., US FRIED, LEONARD JOEL LEVINE, HAROLD A., POUGHKEEPSIE, N.Y., US |
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