DE2458734A1 - Verfahren zur herstellung hochohmiger widerstaende in einer integrierten halbleiterschaltung - Google Patents
Verfahren zur herstellung hochohmiger widerstaende in einer integrierten halbleiterschaltungInfo
- Publication number
- DE2458734A1 DE2458734A1 DE19742458734 DE2458734A DE2458734A1 DE 2458734 A1 DE2458734 A1 DE 2458734A1 DE 19742458734 DE19742458734 DE 19742458734 DE 2458734 A DE2458734 A DE 2458734A DE 2458734 A1 DE2458734 A1 DE 2458734A1
- Authority
- DE
- Germany
- Prior art keywords
- insulating layer
- semiconductor
- implanted
- resistance
- zinc ions
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004065 semiconductor Substances 0.000 title claims description 36
- 238000000034 method Methods 0.000 title claims description 26
- 238000004519 manufacturing process Methods 0.000 title claims description 6
- 150000002500 ions Chemical class 0.000 claims description 11
- PTFCDOFLOPIGGS-UHFFFAOYSA-N Zinc dication Chemical compound [Zn+2] PTFCDOFLOPIGGS-UHFFFAOYSA-N 0.000 claims description 10
- 235000012431 wafers Nutrition 0.000 claims description 9
- 238000002513 implantation Methods 0.000 claims description 7
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 6
- 229910021645 metal ion Inorganic materials 0.000 claims description 6
- 238000005496 tempering Methods 0.000 claims description 6
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 238000009413 insulation Methods 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 18
- 235000012239 silicon dioxide Nutrition 0.000 description 9
- 239000000377 silicon dioxide Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000005468 ion implantation Methods 0.000 description 6
- 230000035515 penetration Effects 0.000 description 5
- 239000011701 zinc Substances 0.000 description 5
- 239000004020 conductor Substances 0.000 description 4
- 238000002161 passivation Methods 0.000 description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910052725 zinc Inorganic materials 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 239000011358 absorbing material Substances 0.000 description 1
- 230000006978 adaptation Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L28/00—Passive two-terminal components without a potential-jump or surface barrier for integrated circuits; Details thereof; Multistep manufacturing processes therefor
- H01L28/20—Resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/3115—Doping the insulating layers
- H01L21/31155—Doping the insulating layers by ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US448100A US3922708A (en) | 1974-03-04 | 1974-03-04 | Method of producing high value ion implanted resistors |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2458734A1 true DE2458734A1 (de) | 1975-09-11 |
Family
ID=23778996
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19742458734 Withdrawn DE2458734A1 (de) | 1974-03-04 | 1974-12-12 | Verfahren zur herstellung hochohmiger widerstaende in einer integrierten halbleiterschaltung |
Country Status (7)
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2446088A1 (de) * | 1974-09-26 | 1976-04-01 | Siemens Ag | Statisches speicherelement und verfahren zu seiner herstellung |
| US4053922A (en) * | 1976-05-19 | 1977-10-11 | General Electric Company | Light triggered thyristor having controlled turn on delay |
| US4249196A (en) * | 1978-08-21 | 1981-02-03 | Burroughs Corporation | Integrated circuit module with integral capacitor |
| JPS57121254A (en) * | 1981-01-21 | 1982-07-28 | Mitsubishi Electric Corp | Manufacture of semiconductor device |
| JPS57201050A (en) * | 1981-06-05 | 1982-12-09 | Seiko Epson Corp | Multilayer wiring structure |
| DE3138960A1 (de) * | 1981-09-30 | 1983-04-14 | Siemens AG, 1000 Berlin und 8000 München | Verfahren zur erzeugung elektrisch leitender schichten |
| US4722913A (en) * | 1986-10-17 | 1988-02-02 | Thomson Components-Mostek Corporation | Doped semiconductor vias to contacts |
| US4766450A (en) * | 1987-07-17 | 1988-08-23 | Xerox Corporation | Charging deposition control in electrographic thin film writting head |
| US4868537A (en) * | 1987-09-10 | 1989-09-19 | Siliconix Incorporated | Doped SiO2 resistor and method of forming same |
| US4950620A (en) * | 1988-09-30 | 1990-08-21 | Dallas Semiconductor Corp. | Process for making integrated circuit with doped silicon dioxide load elements |
| JPH0756883B2 (ja) * | 1990-05-25 | 1995-06-14 | 工業技術院長 | 電気的接続の形成方法とこれを用いて形成される集積回路 |
| US6614088B1 (en) | 2000-02-18 | 2003-09-02 | James D. Beasom | Breakdown improvement method and sturcture for lateral DMOS device |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3390012A (en) * | 1964-05-14 | 1968-06-25 | Texas Instruments Inc | Method of making dielectric bodies having conducting portions |
| US3682700A (en) * | 1968-08-15 | 1972-08-08 | Gale Ind Inc | Method of imparting electrical conductivity to an amorphous substrate by ion implantation,and the product thereof |
| DE1812130C3 (de) * | 1968-12-02 | 1975-01-16 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Verfahren zum Herstellen einer Halbleiter- oder Dickfilmanordnung |
| US3614480A (en) * | 1969-10-13 | 1971-10-19 | Bell Telephone Labor Inc | Temperature-stabilized electronic devices |
| US3620945A (en) * | 1970-01-19 | 1971-11-16 | Texas Instruments Inc | Methods of making a composite dielectric body |
| US3693011A (en) * | 1971-02-02 | 1972-09-19 | Hughes Aircraft Co | Ion implanted bolometer |
| JPS4884580A (US20100223739A1-20100909-C00025.png) * | 1972-02-12 | 1973-11-09 |
-
1974
- 1974-03-04 US US448100A patent/US3922708A/en not_active Expired - Lifetime
- 1974-12-12 DE DE19742458734 patent/DE2458734A1/de not_active Withdrawn
-
1975
- 1975-01-10 FR FR7501214A patent/FR2263608B1/fr not_active Expired
- 1975-01-17 CA CA218,279A patent/CA1023875A/en not_active Expired
- 1975-01-29 IT IT19693/75A patent/IT1031241B/it active
- 1975-02-07 JP JP50015527A patent/JPS50120783A/ja active Pending
- 1975-02-19 GB GB690375A patent/GB1451296A/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| IT1031241B (it) | 1979-04-30 |
| JPS50120783A (US20100223739A1-20100909-C00025.png) | 1975-09-22 |
| CA1023875A (en) | 1978-01-03 |
| FR2263608A1 (US20100223739A1-20100909-C00025.png) | 1975-10-03 |
| FR2263608B1 (US20100223739A1-20100909-C00025.png) | 1976-12-31 |
| GB1451296A (en) | 1976-09-29 |
| US3922708A (en) | 1975-11-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| 8141 | Disposal/no request for examination |