DE2450930A1 - Thermische wanderung metallreicher fluessiger draehte durch halbleitermaterialien - Google Patents
Thermische wanderung metallreicher fluessiger draehte durch halbleitermaterialienInfo
- Publication number
- DE2450930A1 DE2450930A1 DE19742450930 DE2450930A DE2450930A1 DE 2450930 A1 DE2450930 A1 DE 2450930A1 DE 19742450930 DE19742450930 DE 19742450930 DE 2450930 A DE2450930 A DE 2450930A DE 2450930 A1 DE2450930 A1 DE 2450930A1
- Authority
- DE
- Germany
- Prior art keywords
- metal wire
- wire
- axis
- thermal migration
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000005012 migration Effects 0.000 title claims description 58
- 238000013508 migration Methods 0.000 title claims description 58
- 239000000463 material Substances 0.000 title claims description 40
- 239000004065 semiconductor Substances 0.000 title claims description 32
- 239000007788 liquid Substances 0.000 title claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 54
- 239000002184 metal Substances 0.000 claims description 54
- 239000013078 crystal Substances 0.000 claims description 30
- 238000000034 method Methods 0.000 claims description 30
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 22
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 229910052782 aluminium Inorganic materials 0.000 claims description 9
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 9
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 229910000577 Silicon-germanium Inorganic materials 0.000 claims description 2
- 238000000151 deposition Methods 0.000 claims 2
- 230000008021 deposition Effects 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 230000000877 morphologic effect Effects 0.000 description 5
- 238000004857 zone melting Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 125000004429 atom Chemical group 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- YVIMHTIMVIIXBQ-UHFFFAOYSA-N [SnH3][Al] Chemical compound [SnH3][Al] YVIMHTIMVIIXBQ-UHFFFAOYSA-N 0.000 description 2
- 238000010894 electron beam technology Methods 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- KAPYVWKEUSXLKC-UHFFFAOYSA-N [Sb].[Au] Chemical compound [Sb].[Au] KAPYVWKEUSXLKC-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
- 235000012431 wafers Nutrition 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US411018A US3899362A (en) | 1973-10-30 | 1973-10-30 | Thermomigration of metal-rich liquid wires through semiconductor materials |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2450930A1 true DE2450930A1 (de) | 1975-05-07 |
Family
ID=23627223
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19742450930 Pending DE2450930A1 (de) | 1973-10-30 | 1974-10-25 | Thermische wanderung metallreicher fluessiger draehte durch halbleitermaterialien |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3899362A (enrdf_load_stackoverflow) |
| JP (1) | JPS50100973A (enrdf_load_stackoverflow) |
| BR (1) | BR7409058D0 (enrdf_load_stackoverflow) |
| DE (1) | DE2450930A1 (enrdf_load_stackoverflow) |
| FR (1) | FR2249439A1 (enrdf_load_stackoverflow) |
| GB (1) | GB1492795A (enrdf_load_stackoverflow) |
| SE (1) | SE392181B (enrdf_load_stackoverflow) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1524854A (en) * | 1974-11-01 | 1978-09-13 | Gen Electric | Semiconductors |
| US4021269A (en) * | 1975-11-26 | 1977-05-03 | General Electric Company | Post diffusion after temperature gradient zone melting |
| US4012236A (en) * | 1975-12-31 | 1977-03-15 | General Electric Company | Uniform thermal migration utilizing noncentro-symmetric and secondary sample rotation |
| US3998662A (en) * | 1975-12-31 | 1976-12-21 | General Electric Company | Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface |
| US4006040A (en) * | 1975-12-31 | 1977-02-01 | General Electric Company | Semiconductor device manufacture |
| US3998661A (en) * | 1975-12-31 | 1976-12-21 | General Electric Company | Uniform migration of an annular shaped molten zone through a solid body |
| US4040868A (en) * | 1976-03-09 | 1977-08-09 | General Electric Company | Semiconductor device manufacture |
| US4076559A (en) * | 1977-03-18 | 1978-02-28 | General Electric Company | Temperature gradient zone melting through an oxide layer |
| JPS5469071A (en) * | 1977-11-14 | 1979-06-02 | Hitachi Ltd | Vapor deposition pre-processing method |
| JPS5494869A (en) * | 1978-01-11 | 1979-07-26 | Hitachi Ltd | Production of semiconductor device |
| US4159213A (en) * | 1978-09-13 | 1979-06-26 | General Electric Company | Straight, uniform thermalmigration of fine lines |
| US4159916A (en) * | 1978-09-13 | 1979-07-03 | General Electric Company | Thermal migration of fine lined cross-hatched patterns |
| US4178192A (en) * | 1978-09-13 | 1979-12-11 | General Electric Company | Promotion of surface film stability during initiation of thermal migration |
| US4180416A (en) * | 1978-09-27 | 1979-12-25 | International Business Machines Corporation | Thermal migration-porous silicon technique for forming deep dielectric isolation |
| US4170491A (en) * | 1978-12-07 | 1979-10-09 | General Electric Company | Near-surface thermal gradient enhancement with opaque coatings |
| US4190467A (en) * | 1978-12-15 | 1980-02-26 | Western Electric Co., Inc. | Semiconductor device production |
| US4168991A (en) * | 1978-12-22 | 1979-09-25 | General Electric Company | Method for making a deep diode magnetoresistor |
| US4466173A (en) * | 1981-11-23 | 1984-08-21 | General Electric Company | Methods for fabricating vertical channel buried grid field controlled devices including field effect transistors and field controlled thyristors utilizing etch and refill techniques |
| US5049978A (en) * | 1990-09-10 | 1991-09-17 | General Electric Company | Conductively enclosed hybrid integrated circuit assembly using a silicon substrate |
| US10327333B2 (en) | 2012-03-01 | 2019-06-18 | Koninklijke Philips N.V. | Electronic circuit arrangement and method of manufacturing the same |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2813048A (en) * | 1954-06-24 | 1957-11-12 | Bell Telephone Labor Inc | Temperature gradient zone-melting |
-
1973
- 1973-10-30 US US411018A patent/US3899362A/en not_active Expired - Lifetime
-
1974
- 1974-10-25 DE DE19742450930 patent/DE2450930A1/de active Pending
- 1974-10-28 GB GB46513/74A patent/GB1492795A/en not_active Expired
- 1974-10-29 BR BR9058/74A patent/BR7409058D0/pt unknown
- 1974-10-30 JP JP49124503A patent/JPS50100973A/ja active Pending
- 1974-10-30 SE SE7413678A patent/SE392181B/xx unknown
- 1974-10-30 FR FR7436314A patent/FR2249439A1/fr not_active Withdrawn
Also Published As
| Publication number | Publication date |
|---|---|
| GB1492795A (en) | 1977-11-23 |
| US3899362A (en) | 1975-08-12 |
| SE392181B (sv) | 1977-03-14 |
| SE7413678L (enrdf_load_stackoverflow) | 1975-05-02 |
| BR7409058D0 (pt) | 1975-08-26 |
| JPS50100973A (enrdf_load_stackoverflow) | 1975-08-11 |
| FR2249439A1 (enrdf_load_stackoverflow) | 1975-05-23 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OHJ | Non-payment of the annual fee |