DE2450896A1 - Halbleitervorrichtungen und temperaturgradienten-zonenschmelzverfahren zur herstellung derselben - Google Patents
Halbleitervorrichtungen und temperaturgradienten-zonenschmelzverfahren zur herstellung derselbenInfo
- Publication number
- DE2450896A1 DE2450896A1 DE19742450896 DE2450896A DE2450896A1 DE 2450896 A1 DE2450896 A1 DE 2450896A1 DE 19742450896 DE19742450896 DE 19742450896 DE 2450896 A DE2450896 A DE 2450896A DE 2450896 A1 DE2450896 A1 DE 2450896A1
- Authority
- DE
- Germany
- Prior art keywords
- bodies
- semiconductor material
- conductivity type
- metal
- recrystallized
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/40—Crystalline structures
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P10/00—Bonding of wafers, substrates or parts of devices
- H10P10/12—Bonding of semiconductor wafers or semiconductor substrates to semiconductor wafers or semiconductor substrates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
- H10P95/50—Alloying conductive materials with semiconductor bodies
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US41101173A | 1973-10-30 | 1973-10-30 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| DE2450896A1 true DE2450896A1 (de) | 1975-05-07 |
Family
ID=23627187
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE19742450896 Ceased DE2450896A1 (de) | 1973-10-30 | 1974-10-25 | Halbleitervorrichtungen und temperaturgradienten-zonenschmelzverfahren zur herstellung derselben |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JPS50100972A (https=) |
| DE (1) | DE2450896A1 (https=) |
| FR (1) | FR2249444B1 (https=) |
| GB (1) | GB1493825A (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS59500643A (ja) * | 1982-04-09 | 1984-04-12 | ヒユ−ズ・エアクラフト・カンパニ− | 温度勾配ゾ−ン熔融プロセス、および装置 |
| FR2544131B1 (fr) * | 1983-04-08 | 1985-07-05 | Telecommunications Sa | Detecteur photovoltaique en immersion optique |
| JPH0325401Y2 (https=) * | 1985-08-08 | 1991-06-03 |
-
1974
- 1974-10-25 DE DE19742450896 patent/DE2450896A1/de not_active Ceased
- 1974-10-28 GB GB46512/74A patent/GB1493825A/en not_active Expired
- 1974-10-30 JP JP49124502A patent/JPS50100972A/ja active Pending
- 1974-10-30 FR FR7436247A patent/FR2249444B1/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| GB1493825A (en) | 1977-11-30 |
| FR2249444B1 (https=) | 1980-11-07 |
| JPS50100972A (https=) | 1975-08-11 |
| FR2249444A1 (https=) | 1975-05-23 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| DE1056747C2 (de) | Verfahren zur Herstellung von mehreren p-n-UEbergaengen in Halbleiterkoerpern fuer Transistoren durch Diffusion | |
| DE102018102415B4 (de) | Waferverbund und verfahren zur herstellung eines halbleiterbauteils | |
| DE1033787B (de) | Verfahren zum Herstellen von Halbleiteranordnungen mit doppelten p-n-UEbergaengen | |
| DE1933690B2 (https=) | ||
| DE3123234C2 (de) | Verfahren zur Herstellung eines pn-Übergangs in einem Halbleitermaterial der Gruppe II-VI | |
| DE1246890B (de) | Diffusionsverfahren zum Herstellen eines Halbleiterbauelements | |
| DE1084381B (de) | Legierungsverfahren zur Herstellung von pn-UEbergaengen an der Oberflaeche eines Halbleiterkoerpers | |
| DE2354523C3 (de) | Verfahren zur Erzeugung von elektrisch isolierenden Sperrbereichen in Halbleitermaterial | |
| DE2005271C3 (de) | Epitaxialverfahren zum Aufwachsen von Halbleitermaterial auf einem dotierten Halbleitersubstrat | |
| DE1179646B (de) | Flaechentransistor und Verfahren zu seiner Herstellung | |
| DE1521396B1 (de) | Verfahren und vorrichtung zum herstellen eines halbleiter bauelementes mit einer schottky sperrschicht | |
| DE2153862A1 (de) | Verfahren zur Herstellung einer monokristallinen Halbleiter-Auf-Isolator (SOI)-Anordnung | |
| DE1166938B (de) | Verfahren zur Herstellung einer Halbleiteranordnung | |
| DE1439347A1 (de) | Verfahren zum Herstellen eines Halbleiterstromtores vom pnpn-Typ | |
| DE3150748A1 (de) | "verfahren zur herstellung einer halbleiter-vorrichtung" | |
| DE2517252A1 (de) | Halbleiterelement | |
| DE2734203A1 (de) | Hetero-uebergangslaser | |
| DE2450896A1 (de) | Halbleitervorrichtungen und temperaturgradienten-zonenschmelzverfahren zur herstellung derselben | |
| DE3123232C2 (de) | Verfahren zur Herstellung eines pn-Übergangs in einem ZnSe-Einkristall | |
| DE2932191A1 (de) | Dotierung durch einlagerung von troepfchen unter verwendung von reaktiven traegermetallen und dotierungsmitteln | |
| DE1963131A1 (de) | Verfahren zur Herstellung von Halbleiterelementen | |
| DE1911335A1 (de) | Verfahren zum Herstellen von Halbleiterbauelementen | |
| DE3124456A1 (de) | Halbleiterbauelement sowie verfahren zu dessen herstellung | |
| DE2049696C3 (de) | Halbleiterbauelement und Verfahren zum Herstellen | |
| DE1097571B (de) | Flaechentransistor mit drei Zonen abwechselnden Leitfaehigkeitstyps |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| OD | Request for examination | ||
| 8120 | Willingness to grant licences paragraph 23 | ||
| 8131 | Rejection |