DE2450817A1 - Temperaturgradienten-zonenschmelzverfahren zur herstellung von halbleitervorrichtungen - Google Patents

Temperaturgradienten-zonenschmelzverfahren zur herstellung von halbleitervorrichtungen

Info

Publication number
DE2450817A1
DE2450817A1 DE19742450817 DE2450817A DE2450817A1 DE 2450817 A1 DE2450817 A1 DE 2450817A1 DE 19742450817 DE19742450817 DE 19742450817 DE 2450817 A DE2450817 A DE 2450817A DE 2450817 A1 DE2450817 A1 DE 2450817A1
Authority
DE
Germany
Prior art keywords
droplet
liquid
semiconductor
metal
width
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
DE19742450817
Other languages
German (de)
English (en)
Inventor
Thomas Richard Anthony
Harvey Ellis Cline
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co
Original Assignee
General Electric Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co filed Critical General Electric Co
Publication of DE2450817A1 publication Critical patent/DE2450817A1/de
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
    • C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
    • C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
  • Led Devices (AREA)
DE19742450817 1973-10-30 1974-10-25 Temperaturgradienten-zonenschmelzverfahren zur herstellung von halbleitervorrichtungen Withdrawn DE2450817A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US411008A US3899361A (en) 1973-10-30 1973-10-30 Stabilized droplet method of making deep diodes having uniform electrical properties

Publications (1)

Publication Number Publication Date
DE2450817A1 true DE2450817A1 (de) 1975-05-07

Family

ID=23627173

Family Applications (1)

Application Number Title Priority Date Filing Date
DE19742450817 Withdrawn DE2450817A1 (de) 1973-10-30 1974-10-25 Temperaturgradienten-zonenschmelzverfahren zur herstellung von halbleitervorrichtungen

Country Status (7)

Country Link
US (1) US3899361A (enrdf_load_html_response)
JP (1) JPS5080759A (enrdf_load_html_response)
CA (1) CA1040076A (enrdf_load_html_response)
DE (1) DE2450817A1 (enrdf_load_html_response)
FR (1) FR2249437B1 (enrdf_load_html_response)
GB (1) GB1493816A (enrdf_load_html_response)
SE (1) SE399152B (enrdf_load_html_response)

Families Citing this family (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4006040A (en) * 1975-12-31 1977-02-01 General Electric Company Semiconductor device manufacture
US3998662A (en) * 1975-12-31 1976-12-21 General Electric Company Migration of fine lines for bodies of semiconductor materials having a (100) planar orientation of a major surface
US4012236A (en) * 1975-12-31 1977-03-15 General Electric Company Uniform thermal migration utilizing noncentro-symmetric and secondary sample rotation
US3998661A (en) * 1975-12-31 1976-12-21 General Electric Company Uniform migration of an annular shaped molten zone through a solid body
US4159213A (en) * 1978-09-13 1979-06-26 General Electric Company Straight, uniform thermalmigration of fine lines
US4159916A (en) * 1978-09-13 1979-07-03 General Electric Company Thermal migration of fine lined cross-hatched patterns
US4180416A (en) * 1978-09-27 1979-12-25 International Business Machines Corporation Thermal migration-porous silicon technique for forming deep dielectric isolation
US4190467A (en) * 1978-12-15 1980-02-26 Western Electric Co., Inc. Semiconductor device production
US4168991A (en) * 1978-12-22 1979-09-25 General Electric Company Method for making a deep diode magnetoresistor
US4570173A (en) * 1981-05-26 1986-02-11 General Electric Company High-aspect-ratio hollow diffused regions in a semiconductor body
US4720308A (en) * 1984-01-03 1988-01-19 General Electric Company Method for producing high-aspect ratio hollow diffused regions in a semiconductor body and diode produced thereby
US5049978A (en) * 1990-09-10 1991-09-17 General Electric Company Conductively enclosed hybrid integrated circuit assembly using a silicon substrate
DE10302653A1 (de) * 2003-01-20 2004-08-19 Htm Reetz Gmbh Vorrichtung zur Thermomigration

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US2770761A (en) * 1954-12-16 1956-11-13 Bell Telephone Labor Inc Semiconductor translators containing enclosed active junctions
US2813048A (en) * 1954-06-24 1957-11-12 Bell Telephone Labor Inc Temperature gradient zone-melting
US3226265A (en) * 1961-03-30 1965-12-28 Siemens Ag Method for producing a semiconductor device with a monocrystalline semiconductor body
US3205101A (en) * 1963-06-13 1965-09-07 Tyco Laboratories Inc Vacuum cleaning and vapor deposition of solvent material prior to effecting traveling solvent process
US3360851A (en) * 1965-10-01 1968-01-02 Bell Telephone Labor Inc Small area semiconductor device
US3476592A (en) * 1966-01-14 1969-11-04 Ibm Method for producing improved epitaxial films
JPS4919017B1 (enrdf_load_html_response) * 1968-09-30 1974-05-14

Also Published As

Publication number Publication date
SE399152B (sv) 1978-01-30
JPS5080759A (enrdf_load_html_response) 1975-07-01
GB1493816A (en) 1977-11-30
CA1040076A (en) 1978-10-10
SE7413680L (enrdf_load_html_response) 1975-05-02
US3899361A (en) 1975-08-12
FR2249437A1 (enrdf_load_html_response) 1975-05-23
FR2249437B1 (enrdf_load_html_response) 1978-12-08

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Legal Events

Date Code Title Description
8120 Willingness to grant licences paragraph 23
8141 Disposal/no request for examination