DE2424251A1 - Darlington-schaltung - Google Patents

Darlington-schaltung

Info

Publication number
DE2424251A1
DE2424251A1 DE2424251A DE2424251A DE2424251A1 DE 2424251 A1 DE2424251 A1 DE 2424251A1 DE 2424251 A DE2424251 A DE 2424251A DE 2424251 A DE2424251 A DE 2424251A DE 2424251 A1 DE2424251 A1 DE 2424251A1
Authority
DE
Germany
Prior art keywords
emitter
base
region
base region
regions
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
DE2424251A
Other languages
German (de)
English (en)
Inventor
Willem Gerard Einthoven
Jun Carl Franklin Wheatley
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of DE2424251A1 publication Critical patent/DE2424251A1/de
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/944Dispositions of multiple bond pads

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
DE2424251A 1973-05-25 1974-05-18 Darlington-schaltung Pending DE2424251A1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00363881A US3836995A (en) 1973-05-25 1973-05-25 Semiconductor darlington circuit

Publications (1)

Publication Number Publication Date
DE2424251A1 true DE2424251A1 (de) 1974-12-12

Family

ID=23432117

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2424251A Pending DE2424251A1 (de) 1973-05-25 1974-05-18 Darlington-schaltung

Country Status (8)

Country Link
US (1) US3836995A (enExample)
JP (1) JPS5314474B2 (enExample)
BE (1) BE815524A (enExample)
CA (1) CA993116A (enExample)
DE (1) DE2424251A1 (enExample)
FR (1) FR2231115B1 (enExample)
GB (1) GB1450750A (enExample)
IT (1) IT1010295B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4072981A (en) * 1975-03-25 1978-02-07 Texas Instruments Incorporated Fast switching Darlington circuit
JPS5522765Y2 (enExample) * 1975-04-25 1980-05-30
JPS5227277A (en) * 1975-08-25 1977-03-01 Origin Electric Co Ltd Darlington connction type semiconductor unit
US4136355A (en) * 1976-02-10 1979-01-23 Matsushita Electronics Corporation Darlington transistor
JPS5950109B2 (ja) * 1976-07-12 1984-12-06 日本電気株式会社 半導体装置
US4225874A (en) * 1978-03-09 1980-09-30 Rca Corporation Semiconductor device having integrated diode
NL7902632A (nl) * 1979-04-04 1980-10-07 Philips Nv Transistorschakelaar.
US4253105A (en) * 1980-07-03 1981-02-24 Rca Corporation Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device
IT1221867B (it) * 1983-05-16 1990-07-12 Ates Componenti Elettron Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764455C3 (de) * 1968-06-08 1980-02-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte Darlington-Transistorschaltung
US3624454A (en) * 1969-09-15 1971-11-30 Gen Motors Corp Mesa-type semiconductor device
US3755722A (en) * 1972-09-28 1973-08-28 Gen Motors Corp Resistor isolation for double mesa transistors

Also Published As

Publication number Publication date
FR2231115B1 (enExample) 1978-11-24
BE815524A (fr) 1974-09-16
FR2231115A1 (enExample) 1974-12-20
JPS5022585A (enExample) 1975-03-11
IT1010295B (it) 1977-01-10
CA993116A (en) 1976-07-13
US3836995A (en) 1974-09-17
JPS5314474B2 (enExample) 1978-05-17
GB1450750A (en) 1976-09-29

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