GB1450750A - Semiconductor darlington circuit - Google Patents

Semiconductor darlington circuit

Info

Publication number
GB1450750A
GB1450750A GB2203574A GB2203574A GB1450750A GB 1450750 A GB1450750 A GB 1450750A GB 2203574 A GB2203574 A GB 2203574A GB 2203574 A GB2203574 A GB 2203574A GB 1450750 A GB1450750 A GB 1450750A
Authority
GB
United Kingdom
Prior art keywords
base
emitter
transistors
region
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2203574A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Publication of GB1450750A publication Critical patent/GB1450750A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641Combinations of only vertical BJTs
    • H10D84/642Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/20Bump connectors, e.g. solder bumps or copper pillars; Dummy bumps; Thermal bumps
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/071Connecting or disconnecting
    • H10W72/073Connecting or disconnecting of die-attach connectors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/30Die-attach connectors
    • H10W72/351Materials of die-attach connectors
    • H10W72/352Materials of die-attach connectors comprising metals or metalloids, e.g. solders
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/50Bond wires
    • H10W72/59Bond pads specially adapted therefor
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00Interconnections or connectors in packages
    • H10W72/90Bond pads, in general
    • H10W72/941Dispositions of bond pads
    • H10W72/944Dispositions of multiple bond pads

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)
GB2203574A 1973-05-25 1974-05-17 Semiconductor darlington circuit Expired GB1450750A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00363881A US3836995A (en) 1973-05-25 1973-05-25 Semiconductor darlington circuit

Publications (1)

Publication Number Publication Date
GB1450750A true GB1450750A (en) 1976-09-29

Family

ID=23432117

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2203574A Expired GB1450750A (en) 1973-05-25 1974-05-17 Semiconductor darlington circuit

Country Status (8)

Country Link
US (1) US3836995A (enExample)
JP (1) JPS5314474B2 (enExample)
BE (1) BE815524A (enExample)
CA (1) CA993116A (enExample)
DE (1) DE2424251A1 (enExample)
FR (1) FR2231115B1 (enExample)
GB (1) GB1450750A (enExample)
IT (1) IT1010295B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2140204A (en) * 1983-05-16 1984-11-21 Ates Componenti Elettron Power transistor structure with ballast resistor

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4072981A (en) * 1975-03-25 1978-02-07 Texas Instruments Incorporated Fast switching Darlington circuit
JPS5522765Y2 (enExample) * 1975-04-25 1980-05-30
JPS5227277A (en) * 1975-08-25 1977-03-01 Origin Electric Co Ltd Darlington connction type semiconductor unit
US4136355A (en) * 1976-02-10 1979-01-23 Matsushita Electronics Corporation Darlington transistor
JPS5950109B2 (ja) * 1976-07-12 1984-12-06 日本電気株式会社 半導体装置
US4225874A (en) * 1978-03-09 1980-09-30 Rca Corporation Semiconductor device having integrated diode
NL7902632A (nl) * 1979-04-04 1980-10-07 Philips Nv Transistorschakelaar.
US4253105A (en) * 1980-07-03 1981-02-24 Rca Corporation Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764455C3 (de) * 1968-06-08 1980-02-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte Darlington-Transistorschaltung
US3624454A (en) * 1969-09-15 1971-11-30 Gen Motors Corp Mesa-type semiconductor device
US3755722A (en) * 1972-09-28 1973-08-28 Gen Motors Corp Resistor isolation for double mesa transistors

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2140204A (en) * 1983-05-16 1984-11-21 Ates Componenti Elettron Power transistor structure with ballast resistor

Also Published As

Publication number Publication date
FR2231115B1 (enExample) 1978-11-24
BE815524A (fr) 1974-09-16
DE2424251A1 (de) 1974-12-12
FR2231115A1 (enExample) 1974-12-20
JPS5022585A (enExample) 1975-03-11
IT1010295B (it) 1977-01-10
CA993116A (en) 1976-07-13
US3836995A (en) 1974-09-17
JPS5314474B2 (enExample) 1978-05-17

Similar Documents

Publication Publication Date Title
GB1026019A (en) Improvements in or relating to semiconductor devices
GB1470211A (en) Semiconductor devices
GB1450750A (en) Semiconductor darlington circuit
GB1397086A (en) Semiconductor device having darlington circuit
GB1130718A (en) Improvements in or relating to the epitaxial deposition of a semiconductor material
GB1372607A (en) Semiconductor devices
GB1488152A (en) Logic circuit
GB1304246A (enExample)
ES368121A1 (es) Perfeccionamientos en la construccion monolitica de tran- sistores con conexion darlington.
GB1450749A (en) Semiconductor darlington circuit
GB1140667A (en) Electronic circuit
EP0221742A3 (en) Integrated circuit fabrication process for forming a bipolar transistor having extrinsic base regions
GB1450748A (en) Semiconductor darlington circuit
GB1337906A (en) Integrated semiconductor structure
GB1480050A (en) Semiconductor device
GB1204526A (en) Integrated circuit transistor
GB1496306A (en) Semiconductor integrated circuit including an epitaxial base type vertical transistor
GB958246A (en) Transistors and methods of making same
GB1151805A (en) Improvements in or relating to Current Stabilising Transistor Circuits.
GB1427261A (en) Integrated circuits
JPS57176761A (en) Compound semiconductor device
GB1153051A (en) Electrical Isolation of Semiconductor Circuit Components
GB1361433A (en) Operation of a relay using a semiconductor arrangement
GB1319037A (en) Transistors
GB1229295A (enExample)

Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee