CA993116A - Semiconductor darlington circuit - Google Patents

Semiconductor darlington circuit

Info

Publication number
CA993116A
CA993116A CA200,035A CA200035A CA993116A CA 993116 A CA993116 A CA 993116A CA 200035 A CA200035 A CA 200035A CA 993116 A CA993116 A CA 993116A
Authority
CA
Canada
Prior art keywords
semiconductor
darlington circuit
darlington
circuit
semiconductor darlington
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
CA200,035A
Other languages
English (en)
Other versions
CA200035S (en
Inventor
Carl F. Wheatley (Jr.)
Willem G. Einthoven
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
RCA Corp
Original Assignee
RCA Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by RCA Corp filed Critical RCA Corp
Application granted granted Critical
Publication of CA993116A publication Critical patent/CA993116A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10W72/20—
    • H10W72/90—
    • H10W72/073—
    • H10W72/352—
    • H10W72/59—
    • H10W72/944—
CA200,035A 1973-05-25 1974-05-15 Semiconductor darlington circuit Expired CA993116A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US00363881A US3836995A (en) 1973-05-25 1973-05-25 Semiconductor darlington circuit

Publications (1)

Publication Number Publication Date
CA993116A true CA993116A (en) 1976-07-13

Family

ID=23432117

Family Applications (1)

Application Number Title Priority Date Filing Date
CA200,035A Expired CA993116A (en) 1973-05-25 1974-05-15 Semiconductor darlington circuit

Country Status (8)

Country Link
US (1) US3836995A (enExample)
JP (1) JPS5314474B2 (enExample)
BE (1) BE815524A (enExample)
CA (1) CA993116A (enExample)
DE (1) DE2424251A1 (enExample)
FR (1) FR2231115B1 (enExample)
GB (1) GB1450750A (enExample)
IT (1) IT1010295B (enExample)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4072981A (en) * 1975-03-25 1978-02-07 Texas Instruments Incorporated Fast switching Darlington circuit
JPS5522765Y2 (enExample) * 1975-04-25 1980-05-30
JPS5227277A (en) * 1975-08-25 1977-03-01 Origin Electric Co Ltd Darlington connction type semiconductor unit
US4136355A (en) * 1976-02-10 1979-01-23 Matsushita Electronics Corporation Darlington transistor
JPS5950109B2 (ja) * 1976-07-12 1984-12-06 日本電気株式会社 半導体装置
US4225874A (en) * 1978-03-09 1980-09-30 Rca Corporation Semiconductor device having integrated diode
NL7902632A (nl) * 1979-04-04 1980-10-07 Philips Nv Transistorschakelaar.
US4253105A (en) * 1980-07-03 1981-02-24 Rca Corporation Semiconductor power device incorporating a schottky barrier diode between base and emitter of a PNP device
IT1221867B (it) * 1983-05-16 1990-07-12 Ates Componenti Elettron Struttura di transistore bipolare di potenza con resistenza di bilanciamento di base incroporata by-passable

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1764455C3 (de) * 1968-06-08 1980-02-07 Robert Bosch Gmbh, 7000 Stuttgart Monolithisch integrierte Darlington-Transistorschaltung
US3624454A (en) * 1969-09-15 1971-11-30 Gen Motors Corp Mesa-type semiconductor device
US3755722A (en) * 1972-09-28 1973-08-28 Gen Motors Corp Resistor isolation for double mesa transistors

Also Published As

Publication number Publication date
DE2424251A1 (de) 1974-12-12
FR2231115A1 (enExample) 1974-12-20
GB1450750A (en) 1976-09-29
FR2231115B1 (enExample) 1978-11-24
US3836995A (en) 1974-09-17
BE815524A (fr) 1974-09-16
JPS5314474B2 (enExample) 1978-05-17
IT1010295B (it) 1977-01-10
JPS5022585A (enExample) 1975-03-11

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