DE2356926C2 - Verfahren zur Bildung einer störstoffdotierten, dielektrischen Schicht auf einem Halbleiterbsubstrat - Google Patents

Verfahren zur Bildung einer störstoffdotierten, dielektrischen Schicht auf einem Halbleiterbsubstrat

Info

Publication number
DE2356926C2
DE2356926C2 DE2356926A DE2356926A DE2356926C2 DE 2356926 C2 DE2356926 C2 DE 2356926C2 DE 2356926 A DE2356926 A DE 2356926A DE 2356926 A DE2356926 A DE 2356926A DE 2356926 C2 DE2356926 C2 DE 2356926C2
Authority
DE
Germany
Prior art keywords
substrate
doped
layer
compound
silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
DE2356926A
Other languages
German (de)
English (en)
Other versions
DE2356926A1 (de
Inventor
Klaus Christian Richardson Tex. Wiemer
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Texas Instruments Inc
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Publication of DE2356926A1 publication Critical patent/DE2356926A1/de
Application granted granted Critical
Publication of DE2356926C2 publication Critical patent/DE2356926C2/de
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10P14/6336—
    • H10P14/6548—
    • H10P14/69215—
    • H10P14/6928—
    • H10P32/14—
    • H10P32/174—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
DE2356926A 1972-11-15 1973-11-14 Verfahren zur Bildung einer störstoffdotierten, dielektrischen Schicht auf einem Halbleiterbsubstrat Expired DE2356926C2 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US30675572A 1972-11-15 1972-11-15

Publications (2)

Publication Number Publication Date
DE2356926A1 DE2356926A1 (de) 1974-05-16
DE2356926C2 true DE2356926C2 (de) 1984-08-02

Family

ID=23186689

Family Applications (1)

Application Number Title Priority Date Filing Date
DE2356926A Expired DE2356926C2 (de) 1972-11-15 1973-11-14 Verfahren zur Bildung einer störstoffdotierten, dielektrischen Schicht auf einem Halbleiterbsubstrat

Country Status (5)

Country Link
JP (1) JPS4979785A (enExample)
CA (1) CA1014830A (enExample)
DE (1) DE2356926C2 (enExample)
FR (1) FR2213586A1 (enExample)
IT (1) IT994171B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446789A1 (de) * 1984-12-21 1986-07-03 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Verfahren zum herstellen von halbleiterbauelementen

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7506594A (nl) * 1975-06-04 1976-12-07 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
JPS6316972Y2 (enExample) * 1981-06-15 1988-05-13
JPS609890Y2 (ja) * 1981-06-15 1985-04-05 横河電機株式会社 図形入力装置
FR2587732A1 (fr) * 1985-09-26 1987-03-27 Centre Nat Rech Scient Reacteur de depot chimique en phase vapeur assiste par plasma

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL287925A (enExample) * 1962-01-19
GB1006803A (en) * 1963-05-10 1965-10-06 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
GB1102164A (en) * 1964-04-15 1968-02-07 Texas Instruments Inc Selective impurity diffusion

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3446789A1 (de) * 1984-12-21 1986-07-03 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Verfahren zum herstellen von halbleiterbauelementen

Also Published As

Publication number Publication date
FR2213586A1 (en) 1974-08-02
IT994171B (it) 1975-10-20
CA1014830A (en) 1977-08-02
DE2356926A1 (de) 1974-05-16
FR2213586B1 (enExample) 1978-11-17
JPS4979785A (enExample) 1974-08-01

Similar Documents

Publication Publication Date Title
US3907616A (en) Method of forming doped dielectric layers utilizing reactive plasma deposition
EP0062079B1 (en) Thin silicon film and process for preparing same
DE69318653T2 (de) Herstellung von dotierten, mit seltener Erde übersättigten Halbleiterschichten durch CVD
DE2940994C2 (enExample)
EP3155145B1 (de) Verfahren zum abscheiden eines optoelektronischen bauelements mit einer einkristallinen si-ge-sn halbleiterschicht und derartiges optoelektronisches bauelement
DE3587853T2 (de) Ein verfahren zur herstellung einer verbindungshalbleiterstruktur.
DE3135393A1 (de) Verfahren zum herstellen einer lichtempfindlichen amorphen legierung und diese enthaltendes bauelement
DE3526825C2 (enExample)
DE69821780T2 (de) Herstellungsverfahren für p- und n-leitende stickstoffhaltige aiii-bv-halbleiterverbindungen
DE112009004681B4 (de) Verfahren zur Bildung eines Metalloxidfilmes und Metalloxidfilm
DE3515135A1 (de) Verfahren zur abscheidung von borphosphorsilicatglas auf silicium-wafern
DE2356926C2 (de) Verfahren zur Bildung einer störstoffdotierten, dielektrischen Schicht auf einem Halbleiterbsubstrat
DE3526889C2 (de) Vorrichtung zum Züchten von III-V-Verbindungshalbleitern
DE19908400A1 (de) Verfahren zur Herstellung hochdotierter Halbleiterbauelemente
JPS6329821B2 (enExample)
EP0143957B1 (de) Verfahren zur Herstellung von A3B5-Lumineszenzdioden
DE2601652A1 (de) Verfahren zur epitaxialen abscheidung einer a iii-b v-halbleiterschicht auf einem germaniumsubstrat
DE3855165T2 (de) Durchsichtige, elektrisch leitende halbleiterfenster und herstellungsverfahren
US4301323A (en) Lead-doped silicon with enhanced semiconductor properties
EP0721656A1 (de) Verfahren zum herstellen mikrokristalliner schichten und deren verwendung
DE3509910A1 (de) Verfahren zur herstellung eines siliziumfilms auf einem traeger in einer plasmaatmosphaere
US4588454A (en) Diffusion of dopant into a semiconductor wafer
JPH04328823A (ja) 発光ダイオ−ド用エピタキシャルウエハの製造方法
US3755006A (en) Diffused junction gap electroluminescent device
DE69030696T2 (de) Dotierungsverfahren mittels einer adsorbierten Diffusionquelle

Legal Events

Date Code Title Description
OD Request for examination
D2 Grant after examination
8364 No opposition during term of opposition