IT994171B - Procedimento per la diffusione di impurita di materiali semicondut tori per la produzione di disposi tivi elettronici - Google Patents

Procedimento per la diffusione di impurita di materiali semicondut tori per la produzione di disposi tivi elettronici

Info

Publication number
IT994171B
IT994171B IT52215/73A IT5221573A IT994171B IT 994171 B IT994171 B IT 994171B IT 52215/73 A IT52215/73 A IT 52215/73A IT 5221573 A IT5221573 A IT 5221573A IT 994171 B IT994171 B IT 994171B
Authority
IT
Italy
Prior art keywords
impurities
diffusion
procedure
production
electronic devices
Prior art date
Application number
IT52215/73A
Other languages
English (en)
Italian (it)
Inventor
K Wiemer
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of IT994171B publication Critical patent/IT994171B/it

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/401—Oxides containing silicon
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10P14/6336—
    • H10P14/6548—
    • H10P14/69215—
    • H10P14/6928—
    • H10P32/14—
    • H10P32/174—

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
IT52215/73A 1972-11-15 1973-08-28 Procedimento per la diffusione di impurita di materiali semicondut tori per la produzione di disposi tivi elettronici IT994171B (it)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US30675572A 1972-11-15 1972-11-15

Publications (1)

Publication Number Publication Date
IT994171B true IT994171B (it) 1975-10-20

Family

ID=23186689

Family Applications (1)

Application Number Title Priority Date Filing Date
IT52215/73A IT994171B (it) 1972-11-15 1973-08-28 Procedimento per la diffusione di impurita di materiali semicondut tori per la produzione di disposi tivi elettronici

Country Status (5)

Country Link
JP (1) JPS4979785A (enExample)
CA (1) CA1014830A (enExample)
DE (1) DE2356926C2 (enExample)
FR (1) FR2213586A1 (enExample)
IT (1) IT994171B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL7506594A (nl) * 1975-06-04 1976-12-07 Philips Nv Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze.
JPS6316972Y2 (enExample) * 1981-06-15 1988-05-13
JPS609890Y2 (ja) * 1981-06-15 1985-04-05 横河電機株式会社 図形入力装置
DE3446789A1 (de) * 1984-12-21 1986-07-03 SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg Verfahren zum herstellen von halbleiterbauelementen
FR2587732A1 (fr) * 1985-09-26 1987-03-27 Centre Nat Rech Scient Reacteur de depot chimique en phase vapeur assiste par plasma

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL287925A (enExample) * 1962-01-19
GB1006803A (en) * 1963-05-10 1965-10-06 Standard Telephones Cables Ltd Improvements in or relating to semiconductor devices
GB1102164A (en) * 1964-04-15 1968-02-07 Texas Instruments Inc Selective impurity diffusion

Also Published As

Publication number Publication date
DE2356926C2 (de) 1984-08-02
FR2213586A1 (en) 1974-08-02
CA1014830A (en) 1977-08-02
DE2356926A1 (de) 1974-05-16
FR2213586B1 (enExample) 1978-11-17
JPS4979785A (enExample) 1974-08-01

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