FR2213586B1 - - Google Patents
Info
- Publication number
- FR2213586B1 FR2213586B1 FR7340250A FR7340250A FR2213586B1 FR 2213586 B1 FR2213586 B1 FR 2213586B1 FR 7340250 A FR7340250 A FR 7340250A FR 7340250 A FR7340250 A FR 7340250A FR 2213586 B1 FR2213586 B1 FR 2213586B1
- Authority
- FR
- France
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
- C23C16/401—Oxides containing silicon
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
- C23C16/507—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using external electrodes, e.g. in tunnel type reactors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
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- H10P14/6336—
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- H10P14/6548—
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- H10P14/69215—
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- H10P14/6928—
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- H10P32/14—
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- H10P32/174—
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US30675572A | 1972-11-15 | 1972-11-15 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| FR2213586A1 FR2213586A1 (en) | 1974-08-02 |
| FR2213586B1 true FR2213586B1 (enExample) | 1978-11-17 |
Family
ID=23186689
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| FR7340250A Granted FR2213586A1 (en) | 1972-11-15 | 1973-11-13 | Doped dielectric film deposition at low temp and press - using plasma discharge to initiate reaction of organometallic cpd in inert gas, silane and nitrogen dioxide |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS4979785A (enExample) |
| CA (1) | CA1014830A (enExample) |
| DE (1) | DE2356926C2 (enExample) |
| FR (1) | FR2213586A1 (enExample) |
| IT (1) | IT994171B (enExample) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL7506594A (nl) * | 1975-06-04 | 1976-12-07 | Philips Nv | Werkwijze voor het vervaardigen van een halfge- leiderinrichting en halfgeleiderinrichting ver- vaardigd met behulp van de werkwijze. |
| JPS6316972Y2 (enExample) * | 1981-06-15 | 1988-05-13 | ||
| JPS609890Y2 (ja) * | 1981-06-15 | 1985-04-05 | 横河電機株式会社 | 図形入力装置 |
| DE3446789A1 (de) * | 1984-12-21 | 1986-07-03 | SEMIKRON Gesellschaft für Gleichrichterbau u. Elektronik mbH, 8500 Nürnberg | Verfahren zum herstellen von halbleiterbauelementen |
| FR2587732A1 (fr) * | 1985-09-26 | 1987-03-27 | Centre Nat Rech Scient | Reacteur de depot chimique en phase vapeur assiste par plasma |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL287925A (enExample) * | 1962-01-19 | |||
| GB1006803A (en) * | 1963-05-10 | 1965-10-06 | Standard Telephones Cables Ltd | Improvements in or relating to semiconductor devices |
| GB1102164A (en) * | 1964-04-15 | 1968-02-07 | Texas Instruments Inc | Selective impurity diffusion |
-
1973
- 1973-08-02 CA CA177,971A patent/CA1014830A/en not_active Expired
- 1973-08-28 IT IT52215/73A patent/IT994171B/it active
- 1973-10-02 JP JP48110906A patent/JPS4979785A/ja active Pending
- 1973-11-13 FR FR7340250A patent/FR2213586A1/fr active Granted
- 1973-11-14 DE DE2356926A patent/DE2356926C2/de not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| DE2356926C2 (de) | 1984-08-02 |
| FR2213586A1 (en) | 1974-08-02 |
| IT994171B (it) | 1975-10-20 |
| CA1014830A (en) | 1977-08-02 |
| DE2356926A1 (de) | 1974-05-16 |
| JPS4979785A (enExample) | 1974-08-01 |