DE2353770C3 - Halbleiteranordnung - Google Patents
HalbleiteranordnungInfo
- Publication number
- DE2353770C3 DE2353770C3 DE2353770A DE2353770A DE2353770C3 DE 2353770 C3 DE2353770 C3 DE 2353770C3 DE 2353770 A DE2353770 A DE 2353770A DE 2353770 A DE2353770 A DE 2353770A DE 2353770 C3 DE2353770 C3 DE 2353770C3
- Authority
- DE
- Germany
- Prior art keywords
- resistance
- semiconductor
- layer
- connection
- low
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title claims description 52
- 239000010410 layer Substances 0.000 claims description 49
- 239000004020 conductor Substances 0.000 claims description 24
- 239000000463 material Substances 0.000 claims description 4
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000002800 charge carrier Substances 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 230000001419 dependent effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 238000011282 treatment Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- 241000282320 Panthera leo Species 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000009415 formwork Methods 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 230000008719 thickening Effects 0.000 description 1
- 230000003313 weakening effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/74—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/482—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body
- H01L23/4822—Beam leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/07—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common
- H01L27/0744—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type
- H01L27/0788—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration the components having an active region in common without components of the field effect type comprising combinations of diodes or capacitors or resistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
- H03H7/24—Frequency- independent attenuators
- H03H7/25—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable
- H03H7/253—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode
- H03H7/255—Frequency- independent attenuators comprising an element controlled by an electric or magnetic variable the element being a diode the element being a PIN diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76289—Lateral isolation by air gap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01029—Copper [Cu]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12043—Photo diode
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/14—Integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Bipolar Integrated Circuits (AREA)
- Attenuators (AREA)
- Power Conversion In General (AREA)
- Amplitude Modulation (AREA)
- Non-Reversible Transmitting Devices (AREA)
- Electrodes Of Semiconductors (AREA)
- Bipolar Transistors (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL7215200A NL7215200A (US06312121-20011106-C00033.png) | 1972-11-10 | 1972-11-10 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| DE2353770A1 DE2353770A1 (de) | 1974-05-16 |
| DE2353770B2 DE2353770B2 (de) | 1981-07-16 |
| DE2353770C3 true DE2353770C3 (de) | 1982-03-25 |
Family
ID=19817338
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| DE2353770A Expired DE2353770C3 (de) | 1972-11-10 | 1973-10-26 | Halbleiteranordnung |
Country Status (15)
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4932640A (US06312121-20011106-C00033.png) * | 1972-07-20 | 1974-03-25 | ||
| US4050055A (en) * | 1976-07-26 | 1977-09-20 | Krautkramer-Branson, Incorporated | Attenuator circuit ultrasonic testing |
| US4257061A (en) * | 1977-10-17 | 1981-03-17 | John Fluke Mfg. Co., Inc. | Thermally isolated monolithic semiconductor die |
| JPS5474820A (en) * | 1977-11-28 | 1979-06-15 | Stanley Electric Co Ltd | Anticlouding apparatus |
| US4275362A (en) * | 1979-03-16 | 1981-06-23 | Rca Corporation | Gain controlled amplifier using a pin diode |
| US4500845A (en) * | 1983-03-15 | 1985-02-19 | Texas Instruments Incorporated | Programmable attenuator |
| JPS60126643A (ja) * | 1983-12-13 | 1985-07-06 | Matsushita Electric Ind Co Ltd | 印刷媒体 |
| US4738933A (en) * | 1985-08-27 | 1988-04-19 | Fei Microwave, Inc. | Monolithic PIN diode and method for its manufacture |
| DE3675611D1 (de) * | 1985-08-31 | 1990-12-20 | Licentia Gmbh | Verfahren zum herstellen eines beidseitig kontaktierten halbleiterkoerpers. |
| US4786828A (en) * | 1987-05-15 | 1988-11-22 | Hoffman Charles R | Bias scheme for achieving voltage independent capacitance |
| US6835967B2 (en) * | 2003-03-25 | 2004-12-28 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor diodes with fin structure |
| JP2008516441A (ja) * | 2004-10-05 | 2008-05-15 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 半導体デバイス及びその使用 |
Family Cites Families (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| AT270747B (de) * | 1963-12-17 | 1969-05-12 | Western Electric Co | Verfahren zum Herstellen von mechanisch abgestützten, elektrisch leitenden Anschlüssen an Halbleiterscheiben |
| DE1514453A1 (de) * | 1965-04-26 | 1969-08-14 | Siemens Ag | Verfahren zum Herstellen von Halbleiterschaltungen |
| FR1540051A (fr) * | 1966-09-21 | 1968-09-20 | Rca Corp | Microcircuit et son procédé de fabrication |
| US3475700A (en) * | 1966-12-30 | 1969-10-28 | Texas Instruments Inc | Monolithic microwave duplexer switch |
| US3518585A (en) * | 1966-12-30 | 1970-06-30 | Texas Instruments Inc | Voltage controlled a.c. signal attenuator |
| US3549960A (en) * | 1967-12-20 | 1970-12-22 | Massachusetts Inst Technology | Thermo-photovoltaic converter having back-surface junctions |
| GB1259883A (en) * | 1968-07-26 | 1972-01-12 | Signetics Corp | Encapsulated beam lead construction for semiconductor device and assembly and method |
| NL159822B (nl) * | 1969-01-02 | 1979-03-15 | Philips Nv | Halfgeleiderinrichting. |
| JPS4828958B1 (US06312121-20011106-C00033.png) * | 1969-07-22 | 1973-09-06 | ||
| FR2071043A5 (US06312121-20011106-C00033.png) * | 1969-12-16 | 1971-09-17 | Thomson Csf | |
| US3714473A (en) * | 1971-05-12 | 1973-01-30 | Bell Telephone Labor Inc | Planar semiconductor device utilizing confined charge carrier beams |
| DE2203247C3 (de) * | 1972-01-24 | 1980-02-28 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Halbleiterbauelement mit steuerbarer Dämpfung sowie Schaltungsanordnung zu dessen Betrieb |
-
1972
- 1972-11-10 NL NL7215200A patent/NL7215200A/xx not_active Application Discontinuation
-
1973
- 1973-10-26 DE DE2353770A patent/DE2353770C3/de not_active Expired
- 1973-10-31 IN IN2407/CAL/73A patent/IN140549B/en unknown
- 1973-11-07 AT AT936373A patent/ATA936373A/de not_active Application Discontinuation
- 1973-11-07 BR BR8693/73A patent/BR7308693D0/pt unknown
- 1973-11-07 CA CA185,225A patent/CA1006274A/en not_active Expired
- 1973-11-07 SE SE7315118A patent/SE391997B/xx unknown
- 1973-11-07 IT IT70268/73A patent/IT996919B/it active
- 1973-11-07 CH CH1561673A patent/CH574165A5/xx not_active IP Right Cessation
- 1973-11-07 GB GB5162073A patent/GB1445724A/en not_active Expired
- 1973-11-08 BE BE137545A patent/BE807079A/xx unknown
- 1973-11-08 ES ES420364A patent/ES420364A1/es not_active Expired
- 1973-11-08 JP JP48125022A patent/JPS5227031B2/ja not_active Expired
- 1973-11-09 FR FR7339853A patent/FR2206589B1/fr not_active Expired
-
1976
- 1976-09-23 US US05/725,781 patent/US4143383A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| ATA936373A (de) | 1979-06-15 |
| JPS5227031B2 (US06312121-20011106-C00033.png) | 1977-07-18 |
| NL7215200A (US06312121-20011106-C00033.png) | 1974-05-14 |
| IN140549B (US06312121-20011106-C00033.png) | 1976-11-27 |
| JPS50772A (US06312121-20011106-C00033.png) | 1975-01-07 |
| IT996919B (it) | 1975-12-10 |
| US4143383A (en) | 1979-03-06 |
| CH574165A5 (US06312121-20011106-C00033.png) | 1976-03-31 |
| AU6232073A (en) | 1975-05-15 |
| FR2206589A1 (US06312121-20011106-C00033.png) | 1974-06-07 |
| BR7308693D0 (pt) | 1974-08-22 |
| GB1445724A (en) | 1976-08-11 |
| DE2353770B2 (de) | 1981-07-16 |
| SE391997B (sv) | 1977-03-07 |
| DE2353770A1 (de) | 1974-05-16 |
| ES420364A1 (es) | 1976-04-16 |
| CA1006274A (en) | 1977-03-01 |
| FR2206589B1 (US06312121-20011106-C00033.png) | 1978-02-24 |
| BE807079A (nl) | 1974-05-08 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C3 | Grant after two publication steps (3rd publication) | ||
| 8339 | Ceased/non-payment of the annual fee |